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JRCB4559 2SC3950 Y7C15 LA17000 BU2506AX BOD100 07N60 CSC8002
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  Datasheet File OCR Text:
 PD -94317
IRGC8B120UB
IRGC8B120UB IGBT Die in Wafer Form * * * * * * * * * *
Features
GEN5 Non Punch Through (NPT) Technology UltraFast 10s Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient Benchmark Efficiency above 20KHz Optimized for Welding, UPS, and Induction Heating Rugged with UltraFast Performance Excellent Current Sharing in Parallel Operation Qualified for Industrial Market
G E C
Benefits
1200 V IC(nom) = 8A VCE(on) typ. = 3.63V @ IC(nom) @ 25C UltraFast IGBT Short Circuit Rated 150mm Wafer
Electrical Characteristics ( Wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 2.77V Min., 3.82V Max. Collector-to-Emitter Breakdown Voltage 1200V Min. Gate Threshold Voltage 4.4V Min., 6.0V Max. Zero Gate Voltage Collector Current 5.0 A Max. Gate-to-Emitter Leakage Current 1.1 A Max. Test Conditions IC = 5.0A, TJ = 25C, VGE = 15V TJ = 25C, ICES = 100A, VGE = 0V VGE = VCE , TJ =25C, IC =125A TJ = 25C, VCE = 1200V TJ = 25C, VGE = +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Al-Ti-NiV-Ag ( 1kA-1kA-4kA-6kA ) 99% Al, 1% Si (4 microns) 0.133" x 0.195" 150mm, with std. < 100 > flat 185 +/- 15 Microns 01-5427 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C
NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENS ION: [INCH]. 3. LET TER DESIGNAT ION: S = SOURCE G = GAT E
4.953 [.195] EMITT ER 0.696 [.027] 3.473 [.136]
Die Outline
3.378 [.133] 1.953 [.077]
SK = SOURCE KELVIN IS = CURRENT SENSE
E = EMITT ER
4. DIMENSIONAL T OLERANCES: BONDING PADS : WIDTH & LENGTH
G
< 0.635 T OLERANCE = + /- 0.013 < [.0250] TOLERANCE = + /- [.0005] > 0.635 T OLERANCE = + /- 0.025 > [.0250] TOLERANCE = + /- [.0010] < 1.270 T OLERANCE = + /- 0.102 < [.050] T OLERANCE = + /- [.004] > 1.270 T OLERANCE = + /- 0.203 > [.050] T OLERANCE = + /- [.008]
OVERALL DIE: WIDTH
0.701 [.027]
& LENGTH
10/02/01


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