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| PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 500V VCE(sat) 3.0V G @VGE = 15V, IC = 15A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 500 25 15 50 50 12 50 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- -- Typ. -- -- 0.24 -- 6 (0.21) Max. 1.2 2.5 -- 40 -- Units C/W g (oz) Revision 1 C-633 IRGP430UD2 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 -- -- V VGE = 0V, I C = 250A -- 0.46 -- V/C VGE = 0V, IC = 1.0mA -- 2.3 3.0 IC = 15A V GE = 15V -- 2.8 -- V IC = 25A See Fig. 2, 5 -- 2.6 -- IC = 15A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.3 8.1 -- S VCE = 100V, I C = 15A -- -- 250 A VGE = 0V, V CE = 500V -- -- 2500 VGE = 0V, V CE = 500V, T J = 150C -- 1.4 1.7 V IC = 12A See Fig. 13 -- 1.3 1.6 IC = 12A, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 31 6.2 12 73 72 120 100 0.7 0.4 1.1 77 75 200 190 1.5 13 660 110 12 42 80 3.5 5.6 80 220 180 116 Max. Units Conditions 47 IC = 15A 9.2 nC VCC = 400V 19 See Fig. 8 -- TJ = 25C -- ns IC = 15A, V CC = 400V 180 VGE = 15V, R G = 23 150 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 1.7 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 15A, V CC = 400V -- VGE = 15V, R G = 23 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 I F = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 V R = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. C-634 IRGP430UD2 20 Du ty c ycle: 5 0 % TJ = 1 2 5 C T s in k = 9 0 C Ga te d rive a s sp e cifie d Tu rn-o n lo sse s in clu d e effe cts o f re ve rse reco ve ry Po we r D is sipation = 2 4W 16 Load Current (A) 12 6 0 % o f ra te d v o lta g e 8 4 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 100 1000 I C , C ollector-to-E mitter C urrent (A ) TJ = 25 C TJ = 1 50 C 10 IC , Collector-to-Em itter C urrent (A ) 100 T J = 1 50 C 10 TJ = 25 C 1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.1 5 10 V C C = 1 00 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-635 IRGP430UD2 25 V G E = 15 V 4.5 V G E = 15 V 80 s P U L S E W ID TH V C E , C ollector-to-E mitter V oltage (V ) Maxim um D C Collector C urrent (A ) 4.0 20 3.5 I C = 3 0A 15 3.0 10 2.5 I C = 1 5A 2.0 5 1.5 I C = 7.5 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0.1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t 2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.00 1 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-636 IRGP430UD2 140 0 C, C apacitance (pF) 100 0 Cies Coes 800 600 V G E , G ate-to-E m itter V oltage (V ) 100 120 0 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 00 V I C = 1 5A 16 12 8 400 Cres 4 200 0 1 10 0 0 10 20 30 40 V C E , C o llector-to-Em itter V oltage (V) Q G , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.15 Total Switching Losses (mJ) 1.12 Total Switching Losses (mJ) VCC VGE TC IC = 400V = 15V = 25C = 15A 10 RG = 23 V GE = 15V V CC = 400V I C = 30A I C = 15A 1 1.09 I C = 7.5A 1.06 1.03 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-637 IRGP430UD2 5.0 4.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TC V CC V GE = 23 = 150C = 400V = 15V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 3.0 10 2.0 1.0 0.0 0 10 20 30 A 40 1 1 10 100 A 1000 I C , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-638 IRGP430UD2 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 400 di(rec)M/dt - (A/s) 1000 Q RR - (nC) IF = 6.0A I F = 24A I F = 12A I F = 12A 100 200 IF = 6.0A IF = 24A 0 100 di f /dt - (A/s) 1000 10 100 1000 di f /dt - (A/s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-639 IRGP430UD2 90% Vge Same type device as D.U.T. +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1+5S Vce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr = trr id dt tx t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix B: Section D - page D-4 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-640 Section D - page D-13 |
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