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| PD - 9.761A IRGPH50F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) 2.9V @VGE = 15V, I C = 25A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 45 25 90 90 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.64 -- 40 -- Units C/W g (oz) Revision 0 C-279 IRGPH50F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.3 -- V/C VGE = 0V, I C = 1.0mA -- 2.1 2.9 IC = 25A V GE = 15V -- 2.5 -- V IC = 45A See Fig. 2, 5 -- 2.4 -- IC = 25A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 7.5 17 -- S VCE = 100V, I C = 25A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1200 VGE = 0V, V CE = 1200V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 82 16 30 34 13 320 240 1.4 4.5 5.9 33 15 590 500 13 13 2400 140 28 Max. Units Conditions 100 IC = 25A 21 nC VCC = 400V See Fig. 8 43 VGE = 15V -- TJ = 25C -- ns IC = 25A, V CC = 960V 480 VGE = 15V, R G = 5.0 330 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 8.2 -- TJ = 150C, -- ns IC = 25A, V CC = 960V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-280 IRGPH50F 60 F or bo th : T ria n g u la r w a v e : 50 L O A D C U R R E N T (A ) D u ty c yc le : 5 0 % TJ = 1 2 5 C T s ink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 4 0 W 40 S q u a re w a v e : C la m p v o lta g e : 8 0 % o f ra te d 30 6 0 % o f ra te d v o lta g e 20 10 Id e a l d iod e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 10 00 1000 I C , C ollector-to-E mitter C urrent (A ) IC , C ollector-to-E mitter C urrent (A ) TJ = 25 C 1 00 100 TJ = 1 50 C TJ = 15 0C 10 TJ = 2 5 C 10 1 1 1 V G E = 1 5V 2 0 s P U LS E W IDTH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 VC E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-281 IRGPH50F 50 V CE , C o lle cto r-to -E m itte r V o lta g e (V ) V G E = 15 V 4.0 V G E = 15 V 8 0 s P U LS E W IDTH I C = 5 0A M aximum D C Collector C urrent (A) 40 3.0 30 I C = 2 5A 20 2.0 IC = 13A 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) T C , C a s e Te m p e ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herma l R espo nse (Z thJ C ) D = 0.5 0 0.2 0 0.1 0.1 0 0 .0 5 SIN G LE P U LSE (TH ER MA L R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.02 0.01 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0 001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D ura tion (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-282 IRGPH50F 5 0 00 4 0 00 Cies 3 0 00 Coes 2 0 00 V G E , G ate-to-Em itter V oltage (V ) 10 0 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0 V I C = 2 5A 16 C , C ap ac ita nc e (pF ) 12 8 1 0 00 Cres 4 0 1 10 0 0 20 40 60 80 1 00 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7 .2 100 7 .0 Total S w itching Losses (m J) To ta l S w itc hing Lo sse s (m J) VC C VG E TC IC = 9 60 V = 15 V = 25 C = 2 5A RG = 5 V G E = 15 V V C C = 9 60 V I C = 50 A 6 .8 6 .6 I C = 2 5A 10 6 .4 I C = 1 3A 6 .2 6 .0 5 .8 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-283 IRGPH50F 40 30 I C , C o llec to r-to-E m itter C urrent (A ) T o ta l S w itc hin g L o s s e s (m J ) RG TC VCC VGE =5 = 1 50C = 96 0V = 1 5V 1000 VG E E 20 V G= T J = 12 5C 100 20 S A FE O P E RA TING A RE A 10 10 0 10 20 30 40 50 60 1 1 10 100 1000 10000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-284 |
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