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Provisional Data Sheet No. PD-9.1391
AVALANCHE ENERGY AND dv/dt RATED
IRH9230
P-CHANNEL
HEXFET TRANSISTOR
(R)
RAD HARD
-200 Volt, 0.8 , RAD HARD HEXFET
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRH9230 BVDSS -200V RDS(on) 0.8 ID -6.5A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C Continuous Drain Current I D @ VGS = -12V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
Notes: See page 4
Pre-Radiation
IRH9230
-6.5 -4.1 -26 75 0.2 20 330 -6.5 7.5 -5.0 -55 to 150
oC
Units A
W W/K V mJ A mJ V/ns
300 (0.063 in. (1 .6mm) from case for 10s) 11.5 (typical)
g
IRH9230 Device
Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS BVDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min. Typ. Max. Units
-200 -- -- -- -2.0 2.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -0.10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5.0 -- -- 0.8 0.92 -4.0 -- -25 -250 -100 100 35 10 25 50 90 90 90 -- V V/C V S( ) A nA nC
Test Conditions
VGS = 0V, ID = 1.0 mA Reference to 25C, ID = -1.0 mA VGS = -12V, ID = -4.1A VGS = -12V, ID = -6.5A VDS = VGS, ID = -1.0 mA VDS > -15V, I DS = -6.5A VDS = 0.8 x Max. Rating,VGS = 0V VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125C VGS = -20V VGS = +20V VGS = -12V, ID = -6.5A VDS = Max. Rating x 0.5 VDD = -50V ID = -6.5A, RG = 7.5 ,
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
LS
Internal Source Inductance
--
15
--
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
900 250 45
-- -- --
pF
VGS = 0V, VDS = -25V f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
-- -- -- -- -6.5 -26
Test Conditions
Modified MOSFET symbol showing the integral Reverse p-n junction rectifier.
A
-- -- -5.0 V Tj = 25C, IS = -6.5A, VGS = 0V -- -- 400 ns Tj = 25C, IF = -6.5A, di/dt -100 A/s -- -- 4.0 C VDD -14V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min. Typ. Max. Units
-- -- -- 30 1.67 -- K/W
Test Conditions
Notes: See page 4
IRH9230 Device
Radiation Performance of P-Channel Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used.
Radiation Characteristics
Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier P-Channel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects environment and the results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRH9230 100K Rads (Si) min. max.
-200 -2.0 -- -- -- -- -- -- -4.0 -100 100 -25 0.8 -5.0
Units
V nA A V
Test Conditions
VGS = 0V, ID = -1.0 mA VGS = VDS, ID = -1.0 mA VGS = -20V VGS = 20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, ID = -4.1A TC = 25C, IS = -6.5A,VGS = 0V
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1 Drain-to-Source Voltage
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
-- -- -- 1 -- -12 -160 -- -160 -- -- -- -- -- -- 20 -- -12 -8 -- -160 -- -- V
Test Conditions
Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/sec Rate of rise of photo-current H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BVDSS
Typ.
-200
Units
V
Ion
Ni
LET (Si) Fluence Range (MeV/mg/cm2) (ions / cm2) (m)
28 1 x 105 ~41
VDS Bias (V)
-200
VGS Bias (V)
5
IRH9230 Device
Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = -6.5A, VGS = -12V, 25 RG 200 I SD -6.5A, di/dt -140 A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Radiation Characteristics
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.
Case Outline and Dimensions
Conforms to JEDEC Outline TO-204AA (Modified TO-3) Dimensions in Millimeters and (Inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732 020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 49 61 729 6590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: 39 11451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: 81 33 983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/96

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