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Bulletin I27133 rev. G 02/02 IRK.105 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 3500VRMS isolating voltage ADD-A-pakTM GEN V Power Modules Benefits Up to 1600V Full compatible TO-240AA High Surge capability Easy Mounting on heatsink Al203 DBC insulator Heatsink grounded 105 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters I T(AV) or IF(AV) @ 85C I O(RMS) (*) ITSM @ 50Hz IFSM @ 60Hz It 2 2 IRK.105 105 235 1785 1870 15.91 14.52 159.1 400 to 1600 - 40 to 150 - 40 to130 Units A A A A KA2s KA2s KA2s V o o @ 50Hz @ 60Hz I t V RRM range TSTG TJ (*) As AC switch. C C www.irf.com 1 IRK.105 Series Bulletin I27133 rev. G 02/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 06 08 IRK.105 10 12 14 16 VRRM , maximum VRSM , maximum VDRM , max. repetitive repetitive non-repetitive peak off-state voltage, peak reverse voltage peak reverse voltage gate open circuit V V V 400 600 800 1000 1200 1400 1600 500 700 900 1100 1300 1500 1700 400 600 800 1000 1200 1400 1600 IRRM IDRM 130C mA 20 On-state Conduction Parameters IT(AV) IF(AV) Max. average on-state current (Thyristors) Max. average forward current (Diodes) IO(RMS) Max. continuous RMS on-state current. As AC switch ITSM or IFSM Max. peak, one cycle non-repetitive on-state or forward current 235 A 1785 1870 1500 1570 2000 2100 I2t Max. I 2t for fusing 15.91 14.52 11.25 10.27 20.00 18.30 I2t Max. I2t for fusing (1) voltage (2) rt VTM VFM di/dt Max. value of on-state slope resistance (2) Max. peak on-state or forward voltage Max. non-repetitive rate of rise of turned on current IH IL Max. holding current Max. latching current 200 mA 400 150 A/s 1.64 V 159.1 0.80 0.85 2.37 2.25 K A2s V m VT(TO) Max. value of threshold KA2s t =10ms t =10ms t =10ms t =10ms t =10ms t =10ms 105 180 o conduction, half sine wave, TC = 85oC IRK.105 Units Conditions I(RMS) t =8.3ms reapplied or I(RMS) Sinusoidal half wave, Initial TJ = TJ max. No voltage 100% VRRM TJ = 25oC, No voltage 100% VRRM TJ = 25oC, t =8.3ms reapplied t =8.3ms no voltage reapplied t =8.3ms reapplied t =8.3ms reapplied t =8.3ms no voltage reapplied t = 0.1 to 10ms, no voltage reappl. TJ =TJ max Low level (3) High level (4) Low level (3) High level (4) ITM = p x IT(AV) IFM = p x IF(AV) TJ = TJ max TJ = TJ max TJ = 25C Initial TJ = TJ max. TJ = 25oC, from 0.67 VDRM, ITM =p x I T(AV), I = 500mA, g tr < 0.5 s, t p > 6 s TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load (3) 16.7% x p x IAV < I < p x IAV (1) I2t for time tx = I2t x tx (4) I > p x IAV (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 2 www.irf.com IRK.105 Series Bulletin I27133 rev. G 02/02 Triggering Parameters PGM IGM Max. peak gate power IRK. 105 12 3 3 10 4.0 2.5 1.7 270 150 80 Units W A Conditions PG(AV) Max. average gate power Max. peak gate current gate voltage VGT Max. gate voltage required to trigger IGT Max. gate current required to trigger VGD IGD Max. gate voltage that will not trigger Max. gate current that will not trigger -VGM Max. peak negative V TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C Anode supply = 6V resistive load Anode supply = 6V resistive load mA TJ = 25C TJ = 125C o 0.25 6 V mA TJ = 125 C, rated VDRM applied TJ = 125oC, rated VDRM applied Blocking Parameters IRRM IDRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM RMS isolation voltage 2500 (1 min) 3500 (1 sec) dv/dt Max. critical rate of rise of off-state voltage (5) 500 V V/s 50 Hz, circuit to base, all terminals shorted TJ = 130oC, linear to 0.67 VDRM, gate open circuit 20 mA TJ = 130oC, gate open circuit IRK.105 Units Conditions (5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90. Thermal and Mechanical Specifications Parameters TJ Tstg Junction operating temperature range Storage temp. range resistance, junction to case RthCS Typical thermal resistance case to heatsink T Mounting torque 10% to heatsink busbar wt Approximate weight Case style 0.1 5 3 110 (4) TO-240AA Nm gr (oz) JEDEC IRK.105 - 40 to 130 - 40 to 150 0.135 Units C Conditions RthJC Max. internal thermal Per module, DC operation K/W Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound R Conduction (per Junction) Devices IRK.105 (The following table shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC) Sine half wave conduction 180o 0.04 120o 0.05 90o 0.06 60o 0.08 30o 0.12 180o 0.03 Rect. wave conduction 120o 0.05 90o 0.06 60o 0.08 30o 0.12 Units C/ W www.irf.com 3 IRK.105 Series Bulletin I27133 rev. G 02/02 Ordering Information Table Device Code IRK 1 1 2 3 4 5 6 - T 2 105 3 / 16 4 A 5 S90 6 IRK.106 types With no auxiliary cathode Module type Circuit configuration (See Circuit Configuration table below) Current code * * Voltage code (See Voltage Ratings table) A : Gen V dv/dt code: S90 = dv/dt 1000 V/s No letter = dv/dt 500 Vs e.g. : IRKT106/16A etc. * * Available with no auxiliary cathode. To specify change: 105 to 106 Outline Table Dimensions are in millimeters and [inches] IRKT (1) ~ IRKH (1) ~ IRKL (1) ~ IRKN (1) - + (2) + (2) + (2) (2) + (3) G1 K1 (4) (5) K2 G2 (7) (6) G1 K1 (4) (5) (3) (3) K2 G2 (7) (6) (3) + G1 K1 (4) (5) NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.105 Series Bulletin I27133 rev. G 02/02 M a xim um A llo w a ble C ase Te m p er ature ( C ) M axim um Allow ab le Ca se Tem p era ture ( C ) 130 120 110 IRK.105.. Series R thJC (D C ) = 0.27 K/W 130 IRK.105.. Se ries R (D C ) = 0.27 K/W 120 110 C ond uctio n P erio d thJC C o nductio n Angle 100 90 80 70 0 20 40 60 80 100 120 Average On-state C urre nt (A) 100 90 80 70 0 20 40 60 80 100 120 140 160 180 A verag e O n -state C urre n t (A ) 30 60 90 120 180 30 60 90 120 180 DC Fig. 1 - Current Ratings Characteristics M axim um A vera ge O n -state Pow e r Loss (W ) 160 140 120 100 80 60 C ond uctio n An gle Fig. 2 - Current Ratings Characteristics 200 180 160 140 120 DC 180 120 90 60 30 180 120 90 60 30 RM S Lim it M a xim um A vera ge O n -sta te Pow e r Loss (W ) 100 RM S Lim it 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 A verag e On -sta te C urrent (A) IRK.105.. Series P er Jun ction T J = 130 C C ond uctio n Perio d 40 20 0 0 20 40 60 80 100 120 A vera g e O n -sta te C urre n t (A) IRK.105.. Serie s P er Jun ction T J = 130 C Fig. 3 - On-state Power Loss Characteristics 1600 1500 1400 1300 1200 1100 1000 900 800 700 1 10 100 N um b er O f Eq ua l Am p litud e H alf Cy cle C urrent P ulses (N ) Fig. 4 - On-state Power Loss Characteristics 1800 1600 1400 1200 1000 800 Pea k H alf Sin e W ave O n -state C urrent (A ) Pea k H alf Sin e W a ve O n -state C urren t (A ) A t A ny Ra ted Lo a d C on d ition A n d W ith Rate d V RRM A p plie d Fo llo w ing Surg e. In itia l T J = 130 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s M axim um N o n Re pe titive Surg e C urre nt V ersu s Pulse Tra in D uratio n. C o ntro l O f Co nduc tio n M ay N o t Be M a inta ine d. In itial T J = 130 C N o V o lta g e Re app lie d Rate d V RRM Re app lie d IR K.10 5.. Se ries P er J un c tio n IRK .105 .. Serie s P er J un c tio n 0.1 Pulse Train D ura tion (s) 1 600 0.01 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 5 IRK.105 Series Bulletin I27133 rev. G 02/02 350 R th Ma xim u m Tota l O n-state Po w er Loss (W ) SA 300 250 200 150 Co nduction Ang le 180 120 90 60 30 = 0. 0 .5 0. 7 100 50 0 IR K .105.. Serie s Per M od ule T J = 130 C 1K /W 2 K /W 0. 3 2 K/ K/ 0. K/W K/ W W 1 W K/ W -D el ta R 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 To tal R M S O utp ut C urre nt (A ) M a xim um Allow ab le Am b ien t Te m p erature ( C ) Fig. 7 - On-state Power Loss Characteristics 600 A hS Rt M a xim um Total Pow er Loss (W ) 500 400 300 200 100 0 0 40 80 180 (Sine) 180 (Re c t) = 0. 1 K/ W 0. -D 2K el /W ta R 0. 3K /W 0. 5 K/ W 2 x IRK.105.. S eries Sin g le Ph ase Brid ge C on n ec te d T J = 130 C 120 160 K/ W 1 K /W 0 .7 2 K /W 200 0 20 40 60 80 100 120 140 To ta l Outp ut C urren t (A ) M a xim um Allow ab le Am b ien t T em p era ture ( C ) Fig. 8 - On-state Power Loss Characteristics 900 M ax im um Total Pow er Lo ss (W ) 800 700 600 500 400 300 200 100 0 0 40 80 120 160 200 240 0 280 20 40 60 80 100 120 140 To tal O utp ut C urre n t (A ) M ax im um Allow a b le Am b ie n t Tem p e rature ( C ) 3 x IRK .105.. Series Thre e P ha se B rid g e C on n e c ted T J = 130 C 120 (Re c t) 0 .2 K/ R th SA = 0. 1 K/ W -D el ta R W 0 .3 0 .5 K/W K/W 1 K/ W Fig. 9 - On-state Power Loss Characteristics 6 www.irf.com IRK.105 Series Bulletin I27133 rev. G 02/02 1000 Instantane ous O n -state C urre nt (A) 100 T J= 25 C 10 T J = 130 C IRK.105.. Se ries P er Jun c t io n 1 0 0.5 1 1.5 2 2.5 3 3.5 In sta n ta n eo us O n -sta te V olta g e (V ) Fig. 10 - On-state Voltage Drop Characteristics M aximu m Reverse Recovery C harge - Q rr ( C) M a xim um Re verse Rec overy C urre nt - Irr (A) 700 600 500 50 A 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urren t - d i/dt (A/ s) IRK.105.. Se ries T J = 125 C I TM = 200 A 100 A 50 A 20 A 10 A IRK.105.. Se ries T J = 125 C I TM = 200 A 100 A 400 300 200 100 10 20 30 40 50 60 70 80 90 100 Rate O f Fall Of O n -state C urre nt - d i/dt (A / s) 20 A 10 A Fig. 11 - Recovery Charge Characteristics 1 Transient The rm al Im pedance Z thJC (K/W ) Stead y State V alue : R thJC = 0.27 K/W (D C Ope ration ) Fig. 12 - Recovery Current Characteristics 0.1 IRK.105.. Se rie s Pe r Junc tion 0.01 0.001 0.01 0.1 Square W ave Pulse D uration (s) 1 10 Fig. 13 - Thermal Impedance ZthJC Characteristics www.irf.com 7 IRK.105 Series Bulletin I27133 rev. G 02/02 100 Instantaneo us G ate Vo ltage (V) R e c ta n g u la r g a te p u lse a )Rec om m end e d lo a d lin e fo r ra te d d i/d t: 20 V , 20 o h m s tr = 0.5 s, tp >= 6 s b )Rec om m end e d lo a d lin e fo r < = 30% ra ted d i/d t: 15 V , 40 o h m s tr = 1 s, tp >= 6 s 10 (1) (2) (3) (4) (a ) T J = -40 C PG M PG M PG M PG M = = = = 200 W , tp = 300 s 60 W , tp = 1 m s 30 W , tp = 2 m s 12 W , tp = 5 m s (b ) TJ = 25 C TJ = 125 C 1 VG D IG D 0.1 0.001 0.01 (4) (3) (2) (1) IRK.105.. Se ries 0.1 1 Frequenc y Lim ite d by PG (AV ) 10 100 1000 Instantaneo us G ate C urre nt (A) Fig. 14- Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 8 www.irf.com |
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