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PD-94021A
IRLR8103V
* * * * * N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications
G D
Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.
D-Pak
S
DEVICE CHARACTERISTICS IRLR8103V RDS(on) QG Qsw Qoss 7.9m 27nC 12nC 29nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 10V) Pulsed Drain Current Power Dissipation TC = 25C TC = 90C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case RJA RJC Max. 50 1.09 Units C/W C/W TJ, TSTG IS ISM TC = 25C TC = 90C IDM PD Symbol VDS VGS ID IRLR8103V 30 20 91 63 363 115 60 -55 to 150 91 363 C A W A Units V
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11/21/2000
IRLR8103V
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 20 100 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss - - -
(off)
Min 30
Typ - 6.9 7.9
Max - 9.0 10.5
Units V m V
Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 15A VGS = 4.5V, ID = 15A VDS = VGS, ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 20V VGS=5V, ID=15A, VDS=16V VGS = 5V, VDS< 100mV
Current*
Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance
A nA
100 27 23 4.7 2.0 9.7 12 29 2.4 10 9 24 18 2672 1064 109 - - -
nC
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0 VDD = 16V, I D = 15A ns VGS = 5V Clamped Inductive Load
pF
VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) Min Typ 0.9 103 Max 1.3 Units V nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IF = 15A 96 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IF = 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
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IRLR8103V
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
2.7V
2.7V
10
10
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 15A
I D , Drain-to-Source Current (A)
TJ = 25 C
1.5
100
TJ = 150 C
1.0
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLR8103V
5000
VGS , Gate-to-Source Voltage (V)
4000
VGS Ciss Crss Coss
= = = =
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
6
ID = 15A
5
V DS = 24V V DS = 15V
C, Capacitance (pF)
4
3000
Ciss
3
2000
Coss
2
1000
1
Crss
0 1 10 100 0 0 5 10 15 20 25 30
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000 10000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
ID , Drain Current (A)
100
1000 10us
10
100 100us
TJ = 25 C
1
10
1ms
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0 2.4
1 1
TC = 25 C TJ = 150 C Single Pulse
10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRLR8103V
RD
100
VDS
LIMITED BY PACKAGE
80
VGS RG
D.U.T.
+ VDD
ID , Drain Current (A)
-
60
10V
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS
20
90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 PDM t1 t2
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR8103V
R DS ( on ) , Drain-to-Source On Resistance ( )
R DS(on) , Drain-to -Source On Resistance ( )
0.016
0.014
0.014
0.012
0.012 VGS = 4.5V 0.010
0.010
ID = 15A
0.008
VGS = 10V
0.008
0.006 0 50 100 150 200 250 300 350 ID , Drain Current ( A )
0.006 0.0 2.0 4.0 6.0 8.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
VGS
3mA
Charge
IG ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
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IRLR8103V
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 )
1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )
6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 )
0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S :
0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
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IRLR8103V
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
1 6.3 ( .6 41 ) 1 5.7 ( .6 19 )
1 6 .3 ( .64 1 ) 1 5 .7 ( .61 9 )
1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 )
F E ED D IR EC T IO N
8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )
FE E D D IR E C T IO N
N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM ET E R . 2 . AL L D IM EN SIO N S A R E SH O W N IN M ILL IM E TE R S ( IN C H ES ) . 3 . O U T L IN E C O N FO R M S TO EIA -4 8 1 & E IA -5 4 1.
1 3 IN C H
16 m m NOTES : 1 . O U TL IN E C O N F O R M S T O E IA -4 81 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice.11/00
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