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| Bulletin I25167 rev. B 01/94 ST110S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AC (TO-94) Threaded studs UNF 1/2 - 20UNF2A Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 110A TypicalApplications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz VDRM /VRRM tq TJ typical ST110S 110 90 175 2700 2830 36.4 33.2 400 to 1600 100 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AC (TO-94) www.irf.com 1 ST110S Series Bulletin I25167 rev. B 01/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 08 ST110S 12 14 16 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1500 1700 I DRM/I RRM max. @ TJ = TJ max mA 20 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST110S 110 90 175 2700 2830 2270 2380 Units Conditions A C A DC @ 85C case temperature t = 10ms t = 8.3ms A t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave I 2t Maximum I2t for fusing 36.4 33.2 25.8 23.5 I 2 t Maximum I2t for fusing 364 0.90 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 0.92 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.81 1.52 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV) ),TJ = TJ max. I = 350A, TJ = TJ max, t = 10ms sine pulse pk p 1.79 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST110S 500 2.0 Units Conditions A/s Gate drive 20V, 20, t 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s g r Typical delay time Typical turn-off time s tq 100 V = 0.67% VDRM, T J = 25C d ITM = 100A, TJ = TJ max, di/dt = 10A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s p 2 www.irf.com ST110S Series Bulletin I25167 rev. B 01/94 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST110S 500 20 Units Conditions V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM +VGM -V GM Maximum peak gate power ST110S 5 1 2.0 20 Units Conditions W A T J = TJ max, t 5ms p PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 90 40 VGT DC gate voltage required to trigger 2.9 1.8 1.2 IGD VGD DC gate current not to trigger DC gate voltage not to trigger T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms p V 5.0 MAX. 150 3.0 10 0.25 mA V V mA T J = TJ max, t 5ms p T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST110S -40 to 125 -40 to 150 0.195 Units C Conditions RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% DC operation K/W 0.08 15.5 (137) 14 (120) Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads wt Approximate weight Case style 130 g See Outline Table TO - 209AC (TO-94) www.irf.com 3 ST110S Series Bulletin I25167 rev. B 01/94 RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.035 0.041 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 11 2 0 3 S 4 16 5 P 6 0 7 V 8 9 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 20UNF threads 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 9 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) 4 www.irf.com ST110S Series Bulletin I25167 rev. B 01/94 Outline Table GLASS METAL SEAL 16.5 (0.65) MAX. (0.3 7) M 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. 9.5 C.S. 16mm 2 (.025 s.i.) RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE WHITE GATE C.S. 0.4 mm 2 (.0006 s.i.) 20 (0. 79 FLEXIBLE LEAD )M IN . IN . Fast-on Terminals AMP. 280000-1 REF-250 70 (2.75) MIN. 215 (8.46) RED SHRINK 29 (1.14) MAX. WHITE SHRINK 10 (0.39) 12.5 (0.49) MAX. 23.5 (0.93) MAX. DIA. 21 ( 0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Case Style TO-209AC (TO-94) All dimensions in millimeters (inches) CERAMIC HOUSING 16.5 (0.65) MAX. (0 . 37 )M IN . (0. 79 20 )M IN . 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. FLEXIBLE LEAD C.S. 16mm 2 RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE WHITE GATE C.S. 0.4 mm 2 (.0006 s.i.) (.025 s.i.) 215 (8.46) 70 (2.75) MIN. RED SHRINK 29 (1.14) MAX. WHITE SHRINK 10 (0.39) 22.5 (0.88) MAX. DIA. 12. 5 (0.49) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. 9. 5 www.irf.com 5 ST110S Series Bulletin I25167 rev. B 01/94 Outline Table GLASS-METAL SEAL FLAG TERMINALS 23.5 DIA. (0.93) MAX. 1.5 (0.06) DIA. 5.2 (0.20) DIA. 46 (1.81) 49 (1.93) (0.39) 10 29 (1.14) MAX. 7.5 (0.30) 12.5 (0.49) 21(0.83) MAX. MAX. 1/2"-20UNF-2A SW 27 (0.65) 16.5 2.4 (0.09) 29.5 (1.16) CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 10 (0.39) 5.2 (0.20) DIA. 10 ( 0 39) Case Style TO-208AD (TO-83) All dimensions in millimeters (inches) 46 (1.81) 49 (1.93) 7.5 (0.30) 12.5 (0.49) 21(0.83) MAX. MAX. 1/2"-20UNF-2A SW 27 29 (1.14) MAX. 2.4 (0.09) 29.5 (1.16) 6 (0.65) 16.5 www.irf.com 10 (0.39) ST110S Series Bulletin I25167 rev. B 01/94 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 ST110S Series R thJC (DC) = 0.195 K/W 120 130 ST110S Series R thJC (DC) = 1.95 K/W 120 110 Conduction Angle 110 Conduction Period 100 100 30 60 90 30 60 90 90 120 180 0 20 40 DC 90 120 180 120 80 0 20 40 60 80 100 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 80 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 160 140 120 100 80 180 120 90 60 30 RMS Limit S R th 2 0. 3 0. 0. 4 0. 5 W K/ K/ W W K/ A =0 .1 W 0. 6K /W 0 .8 K/W 1K /W K/ W K/ a elt -D R 60 Conduction Angle 1 .2 K /W 40 20 0 0 20 40 60 80 100 120 25 ST110S Series T J = 125C 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 220 200 180 160 140 120 100 RMS Limit 80 60 40 20 0 Conduction Period DC 180 120 90 60 30 A hS Rt 2 0. W K/ K/ W 0. 3 = 0.1 W K/ 0. 4 0. 5 0.6 el -D K/ W K/ W K/W K/ W ta R 0 .8 1K /W 1 .2 K/W ST110S Series TJ = 125C 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics www.irf.com 7 ST110S Series Bulletin I25167 rev. B 01/94 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) 2400 2200 2000 1800 1600 1400 1200 1000 1 2800 2600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2400 Initial TJ = 125C No Voltage Reapplied 2200 Rated V RRMReapplied 2000 1800 1600 1400 1200 1000 0.01 ST110S Series 0.1 1 10 ST110S Series 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) TJ = 25C 1000 TJ = 125C 100 ST110S Series 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value R thJC = 0.195 K/W (DC Operation) 0.1 0.01 ST110S Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic 8 www.irf.com ST110S Series Bulletin I25167 rev. B 01/94 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b) Tj=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms Tj=25 C Tj=125 C 1 VGD IGD 0. 1 0. 001 0.01 (1) (2) (3) (4) Device: ST110S Series 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 9 |
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