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| Bulletin I25165 rev. B 01/94 ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 200A TypicalApplications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz VDRM /VRRM tq TJ typical ST180S 200 85 314 5000 5230 125 114 400 to 2000 100 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AB (TO-93) www.irf.com 1 ST180S Series Bulletin I25165 rev. B 01/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage Code 04 08 ST180S 12 16 18 20 VDRM /VRRM , max. repetitive peak and off-state voltage V 400 800 1200 1600 1800 2000 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1700 1900 2100 I DRM/I RRM max. @ TJ = TJ max mA 30 On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current ST180S 200 85 314 5000 5230 4200 4400 Units Conditions A C A DC @ 76C case temperature t = 10ms t = 8.3ms A t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave I2 t Maximum I2t for fusing 125 114 88 81 I2 t Maximum I2t for fusing 1250 1.08 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Max. (typical) latching current V 1.14 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.14 1.75 600 mA 1000 (300) TJ = TJ max, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 570A, TJ = 125C, tp = 10ms sine pulse 1.18 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST180S 1000 1.0 Units Conditions A/s Gate drive 20V, 20, t 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s g r Typical delay time Typical turn-off time s tq 100 V = 0.67% VDRM, TJ = 25C d ITM = 300A, TJ = TJ max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s 2 www.irf.com ST180S Series Bulletin I25165 rev. B 01/94 Blocking Parameter dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST180S 500 30 Units Conditions V/s mA TJ = TJ max linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST180S 10 2.0 3.0 20 Units Conditions W A T J = TJ max, tp 5ms T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, tp 5ms PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 90 40 VGT DC gate voltage required to trigger 2.9 1.8 1.2 IGD VGD DC gate current not to trigger DC gate voltage not to trigger V 5.0 MAX. 150 3.0 10 0.25 mA V V mA TJ = TJ max, tp 5ms T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST180S -40 to 125 -40 to 150 0.105 Units C Conditions RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% DC operation K/W 0.04 31 (275) 24.5 (210) Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads g See Outline Table wt Approximate weight Case style 280 TO - 209AB (TO-93) www.irf.com 3 ST180S Series Bulletin I25165 rev. B 01/94 RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.015 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 18 2 0 3 S 4 20 5 P 6 0 7 8 9 1 2 3 4 5 6 - Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 16UNF threads M = Stud base metric threads (M16 x 1.5) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) 9 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) 4 www.irf.com ST180S Series Bulletin I25165 rev. B 01/94 Outline Table GLASS METAL SEAL 19 (0.75) MAX. 8.5 (0.33) DIA. 4.3 (0.17) DIA. MI N. 37) 9.5 (0. (0.8 6) M 22 IN . 4 (0.16) MAX. FLEXIBLE LEAD C.S. 25mm 2 (0.039 s.i.) RED SILICON RUBBER 10 (0. 39) RED CATHODE C.S. 0.4mm (0.0006 s.i.) WHITE GATE 2 Fast-on Terminals +I 210 (8.26) AMP. 280000-1 REF-250 90 (3. 54) MIN. RED SHRINK 220 (8.66) + 10 (0.39) WHITE SHRINK 38 .5 (1.52) 16 (0.63) MAX. MAX. 28.5 (1.12) MAX. DIA. 27.5 (1.0 8) MAX. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. CERAMIC HOUSING 19 (0.75) MAX. 4 (0.16) MAX. 8.5 (0.33) DIA. 4.3 (0.17) DIA. 9.5 (0 . 37 ) MI N. C.S. 25mm 2 RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE 220 (8.66) + 10 (0.39) WHITE SHRINK (0.039 s.i.) +I 210 (8.26) 90 (3.54) MIN. RED SHRINK 38.5 (1 .52) 16 (0. 63) MA X. M AX. 27.5 (1.08) MAX. DIA. 27. 5 (1.08) MA X. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. * FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX. 22 (0 .8 FLEXIBLE LEAD 6) MI N. www.irf.com 5 ST180S Series Bulletin I25165 rev. B 01/94 Outline Table GLASS-METAL SEAL FLAG TERMINALS 22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51 ) 80 (3.1 5) MAX . 1.5 (0.06) DIA. 38.5 (1.5 2) M AX . DIA. 28.5 (1.12) MAX. 27 .5 (1 .0 8) MAX . 1 6 (0.63) MA X. SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) 3 (0.12) CERAMIC HOUSING FLAG TERMINALS 22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51) 80 (3.15) M AX. 1.5 (0.06) DIA. 38.5 (1.52) MAX. DIA. 27.5 (1.08) MAX. 27.5 (1.08) MAX. 16 (0.63) MAX. SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) 6 www.irf.com ST180S Series Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 130 ST180S Series R thJC (DC) = 0.105 K/W 120 130 120 110 ST180S Series R thJC (DC) = 0.105 K/W 110 Conduction Angle Conduction Period 100 90 30 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 100 30 60 90 120 180 90 60 90 120 180 DC 80 0 40 80 120 160 200 240 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 350 300 250 200 150 Conduction Angle 180 120 90 60 30 RMS Limit S R th 0. 16 K/ 0. 3 W K/ W 0.4 K /W 0.5 K 0 .8 0. 2 K/ W 1 0. W K/ A = 8 0 .0 W K/ a el t -D R /W 100 50 0 K/W W ST180S Series T J = 125C 0 40 80 120 160 200 1.2 K/ 25 240 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 500 450 400 350 300 250 200 150 100 50 0 0 40 80 120 160 200 240 280 320 25 DC 180 120 90 60 30 RMS Limit Conduction Period R 0. 1 th SA = 0. K/ W 0. 08 16 K/ W K/ W K/ W -D 0.2 el ta R ST180S Series T J = 125C /W 0. 4 K /W 0.5 K /W 0 .8 K/W 1.2 K/W 0. 3 K 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-state Power Loss Characteristics 7 ST180S Series Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) 4800 4400 4000 3600 3200 2800 2400 2000 1 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 5000 Of Conduction May Not Be Maintained. Initial TJ = 125C 4500 No Voltage Reapplied Rated VRRMReapplied 4000 3500 3000 2500 2000 0.01 ST180S Series 10 100 ST180S Series 0.1 Pulse Train Duration (s) 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) TJ = 25C TJ = 125C 1000 ST180S Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thJC (K/W) 1 Steady State Value R thJC = 0.105 K/W (DC Operation) 0.1 0.01 ST180S Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic 8 ST180S Series 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b) Tj=-40 C (1) (2) (3) (4) (a) PGM = PGM = PGM = PGM = 10W, 20W, 40W, 60W, tp = tp = tp = tp = 4ms 2ms 1ms 0.66ms Tj=25 C Tj=125 C 1 VGD IGD 0.1 0. 001 0.01 (1) (2) (3) (4) Device: ST180S Series 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics 9 |
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