View 2673_965241.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Bulletin I25176 rev. B 04/00
ST203C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
370A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
ST203C..C
370 55 700 25 5260 5510 138 126 1000 to 1200 20 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
@ 50Hz @ 60Hz
V DRM/V RRM tq range TJ
www.irf.com
1
ST203C..C Series
Bulletin I25176 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST203C..C 10 12 1000 1200
VRSM , maximum non-repetitive peak voltage V
1100 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 860 840 700 430 50 VDRM 50 40
ITM 180 el 750 706 580 340 50 50 55 1340 1400 1350 980 50 VDRM 40
o
ITM 100s 1160 1220 1170 830 50 55 5620 2940 1750 910 50 V DRM 40
ITM
Units
5020 2590 1520 780 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST203C..C
370 (140) 55 (85) 700 5260 5510 4420 4630
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial T J = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
138 126 98 89 KA2 s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1380
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
www.irf.com
ST203C..C Series
Bulletin I25176 rev. B 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r Low level value of forward slope resistance
t2
ST203C..C Units
1.72 1.17 1.22 0.92 m 0.83 600 1000 mA V
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold
High level value of forward slope resistance Maximum holding current Typical latching current
IH IL
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST203C..C
1000 0.8 Min 20 Max 30
Units
A/s
Conditions
TJ = TJ max., VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST203C..C
500 40
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST203C..C
60 10 10 20
Units
W A
Conditions
T J = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max., rated VDRM applied
www.irf.com
3
ST203C..C Series
Bulletin I25176 rev. B 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST203C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
50 TO - 200AB (A-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.017 0.019 0.024 0.035 0.060
Rectangular conduction
Single Side Double Side 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
20
2
3
3
C
4
12
5
C
6
H
7
H
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for t q test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 20 20 CK t (s) 25 CJ q 30 CH 50 DK DJ DH 100 EK EJ EH 200 -FJ * FH 400 --HH
*Standard part number. All other types available only on request.
4
www.irf.com
ST203C..C Series
Bulletin I25176 rev. B 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
M a x im u m A llo w a b le H e a tsin k T e m p e r a tu re ( C )
Maxim um Allowab le Heatsin k Tem perature (C)
130 120 110 100 90 80 70 60 50 40 0 50
ST203C..C Series (Single Side Cooled) R thJ-h s (DC) = 0.17 K/W
1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 50 30
ST 2 0 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 7 K / W
C o ndu ct io n A ng le
Co nd uc tio n P eriod
30
60 90 120 180
60 90 120 180 DC
100
150
200
250
1 00 15 0 20 0 2 5 0 3 0 0 3 50 4 00
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
www.irf.com
5
ST203C..C Series
Bulletin I25176 rev. B 04/00
M a x im u m A llo w a b le H e a t sin k T e m p e ra tu re (C ) 130 120 110 100 90 80 70 60 50 40 30 20 0 1 00 2 00 300 400 50 0 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C o nduc tio n An g le
M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (C )
ST 2 0 3 C ..C S e rie s (D o u b le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 8 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 3 0 60
ST 2 0 3 C ..C Se rie s (D o ub le S id e C o o le d ) R thJ -hs (D C ) = 0 .0 8 K /W
C o ndu c tio n P erio d
30 60 90 1 20 18 0
180 90 1 20
DC
1 0 0 20 0 30 0 40 0 5 00 6 00 70 0 8 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
Maxim um Average On-state Power Loss (W )
M a x im u m A v e ra g e O n -st a t e P o w e r Lo ss (W )
1 0 00 9 00 8 00 7 00 6 00 5 00 4 00 3 00 2 00 1 00 0 0 5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0 A v e ra g e O n -st a te C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics
C o nd uct io n A ng le
1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 Average On -state Curren t (A)
Fig. 6 - On-state Power Loss Characteristics
C o ndu ctio n Pe rio d
180 120 90 60 30 R M S Lim it
DC 180 120 90 60 30 RM S Lim it
S T2 0 3 C ..C Se rie s T J = 1 2 5 C
ST203C..C Series TJ = 125C
Peak Half Sin e Wave On-state Curren t (A)
4500 4000 3500 3000 2500
At An y Rated L oad Con dition And W ith Rated VRR M Applied Following Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e a k H a lf Sin e W a v e O n -st a te C u rre n t (A )
5000
5500
M a xim u m N o n Re p e tit iv e Su rg e C u rre n t V e rsu s P u lse T ra in D ura t io n . C o n t ro l 5000 O f C o n d u c tio n M a y N o t Be M a in ta in e d . In it ia l T J = 1 2 5 C 4500 N o V o lt a g e R e a pp lie d R a te d V RRM R e a p p lie d 4000 3500 3000 2500 S T2 0 3 C ..C Se rie s 2000 0.01 0.1 P u lse T ra in D u ra t io n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
ST203C..C Series 2000 1 10 100
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N )
1
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
www.irf.com
ST203C..C Series
Bulletin I25176 rev. B 04/00
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ -hs (K / W ) 10000 In stan taneous O n-state Current (A) 1 ST 2 0 3 C ..C S e rie s
ST203C..C Series
0 .1
1000
0. 01
TJ = 25C TJ = 125C 100 1 1.5 2 2. 5 3 3. 5 4 4.5 5 In stantaneous O n-state V oltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
St e a d y St a te V a lue R th J- hs = 0 .1 7 K / W (S in g le Sid e C o o le d ) R thJ-h s = 0 .0 8 K / W (D o u b le S id e C o o le d ) (D C O p e r a tio n ) 0 .0 1 0 .1 1 10 S q u a re W a v e P u lse D u rat io n (s)
0 .0 0 1 0 .0 0 1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Maximu m R everse Recovery Charge - Qrr (C)
ST203C..C Series TJ = 125 C 200
I T M = 50 0 A 3 00 A 20 0 A
M ax im u m R e v e rse Re c o v e ry C u rre n t - Irr (A )
250
1 60
I T M = 50 0 A
1 40 1 20 1 00 80 60 40 20 0 0 20
3 00 A 2 00 A 1 00 A 50 A
150
10 0 A
100
50 A
50
ST 2 0 3 C ..C S e rie s TJ = 1 2 5 C 40 60 80 1 00
0 0 20 40 60 80 100 Rate O f Fall O f O n-state Current - di/dt (A/s)
Fig. 11 - Reverse Recovered Charge Characteristics
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
P e a k O n - sta t e C u rre n t (A )
Sn ubbe r circ uit R s = 4 7 o hm s C s = 0.22 F V D = 80% V D RM 4 00 20 0 10 0 50 Hz 1 50 0 2 5 00 3 00 0 ST203 C. .C Se ries Sinuso id al p ulse T C = 40 C 5 00 0 tp 10 00 0 1 0 00 5 00
Snubb er circuit R s = 4 7 o hm s C s = 0. 22 F V D = 80 % VDR M
100 0 50 0 1 5 00
40 0 2 00
100
50 Hz
1 E3
2 50 0 3 00 0 5 00 0 tp
10 00 0
ST20 3C ..C Serie s Sin uso idal pulse T C = 55C
1 E2 1 E1
1E2
1 E3
1 E14E 41 E 1 1 1E
1 E2
1 E3
1E4
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
P u lse Ba se w id t h ( s)
www.irf.com
7
ST203C..C Series
Bulletin I25176 rev. B 04/00
1 E4
Snub ber c ircu it R s = 22 ohm s C s = 0 .15 F V D = 80 % V Snub ber circuit R s = 47 o hm s C s = 0 .2 2 F V D = 80 % V D RM 150 0 1 00 0 500 25 0 0 3 00 0 5 00 0 3 00 0 5 00 0 ST020 3C ..C Se ries Tra pezo id al p ulse T C = 40 C di/d t = 50 A/s ST2 03 C..C Serie s Trap ezo ida l pulse TC = 5 5C di/d t = 50A /s 40 0 200 1 00 50 Hz
P e a k O n -sta te C u rre n t (A )
DR M
1 E3
25 00 1 500
1 00 0 5 00
4 00 20 0
100
50 Hz
1 E2
10 00 0 10 00 0 tp
tp
1 E1 1 E1
1E2
1E3
1E 1 E 4E 4 1 E 1 1 1
1E2
1E3
1E4
Pu lse B a se w idt h ( s)
Fig. 14 - Frequency Characteristics
P u lse Ba se w id th ( s)
1E4
Snubbe r c ircuit R s = 4 7 ohm s C s = 0 .22 F V D = 8 0% V D RM Sn ubbe r circ uit R s = 4 7 o hm s C s = 0 .22 F V D = 8 0% V D RM 10 00 50 0 4 00 2 00 1 00 50 Hz 1 50 0 2 50 0 30 00 ST20 3C. .C Serie s Sin uso idal pulse T C = 40 C di/dt = 1 00A /s 5 000 1 00 00 tp ST203 C.. C Serie s Trapezo id al pulse TC = 5 5C di/d t = 10 0A/s 100 0 50 0 40 0 20 0 1 00 50 Hz
P e a k O n - st a t e C u rre n t (A )
1E3
2 50 0 30 00 5 00 0 1 500
1E2
10 00 0 tp
1E1 1E1
1E2
1 E3
1 E14E 4 1 E 1 1 1E
1E2
1E3
1E4
Pu lse B ase w id th (s)
Fig. 15 - Frequency Characteristics
Pu lse B ase w id th ( s)
1E5
ST2 03 C..C Series Rec tang ula r pulse di/dt = 50A /s 2 0 jou le s pe r pulse 2 3 5 10
P e a k O n - st a t e C u rre n t (A )
tp
1E4
2 4 10
20 jo ules pe r pulse 1
1E3
0.2 0 .1
0 .5 0 .3
1 0 .5 0 .3 0.2 0 .1
1E2
tp ST20 3C ..C Se ries Sin uso id al p ulse
1E1 1E1
1E2
1 E3
1E 1 E 4E 4 1 E 1 1 1
1E2
1E3
1E4
Pu lse B a se w id t h ( s)
P u lse B a se w id t h ( s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
www.irf.com
ST203C..C Series
Bulletin I25176 rev. B 04/00
1 00 In st an t a n e o us G a te V o lt a g e ( V ) Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 s (b )
Tj=-40 C Tj=2 5 C Tj=1 25 C
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
1 0W , 2 0W , 4 0W , 6 0W ,
tp tp tp tp
= = = =
20 m s 10 m s 5m s 3 .3 m s
1 VGD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3 ) ( 4 )
D e v ic e : ST 2 0 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t ( A )
Fig. 17 - Gate Characteristics
www.irf.com
9

▲Up To Search▲

Price & Availability of 2673

	To Download 2673 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .