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 Bulletin I25154 rev. C 04/00
ST330C..L SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AC (B-PUK) High profile hockey-puk
650A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
case style TO-200AC (B-PUK)
Units
A C A C A A KA2s KA2s V s C
ST330C..L
650 55 1230 25 9000 9420 405 370 400 to 1600
@ 50Hz @ 60Hz
VDRM /VRRM tq TJ typical
100 - 40 to 125
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1
ST330C..L Series
Bulletin I25154 rev. C 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST330C..L 12 14 16
V DRM /VRRM , max. repetitive peak and off-state voltage V
400 800 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage V
500 900 1300 1500 1700
IDRM /I RRM max.
@ T J = TJ max
mA
50
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST330C..L
650 (314) 55 (75) 1230 9000 9420 7570 7920
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA 2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I 2t
Maximum I2t for fusing
405 370 287 262
I 2 t
Maximum I2t for fusing
4050 0.91
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO) 1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 0.93 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. m 0.57 1.90 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV) ),TJ = TJ max. I = 1730A, TJ = TJ max, t = 10ms sine pulse
pk p
0.57
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td t Typical delay time Typical turn-off time
ST330C..L
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s Vd = 0.67% VDRM, TJ = 25C ITM = 550A, TJ = TJ max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s
s
q
100
2
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ST330C..L Series
Bulletin I25154 rev. C 04/00
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST330C..L
500 50
Units Conditions
V/s mA T J = TJ max. linear to 80% rated V DRM TJ = TJ max, rated VDRM /V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power
ST330C..L
10.0 2.0 3.0 20
Units Conditions
T J = TJ max, t 5ms W A
p
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1
T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms
p
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, t 5ms
p
T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST330C..L
-40 to 125 -40 to 150 0.11 0.06 0.011 0.005 9800 (1000)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
250
TO - 200AC (B-PUK)
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ST330C..L Series
Bulletin I25154 rev. C 04/00
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Conduction angle
Single Side Double Side 180 120 90 60 30 0.012 0.014 0.018 0.026 0.045 0.010 0.015 0.018 0.027 0.046
Rectangular conduction Units
Single Side Double Side 0.008 0.014 0.019 0.027 0.046 0.008 0.014 0.019 0.028 0.046 K/W TJ = TJ max.
Conditions
Ordering Information Table
Device Code
ST
1
33
2
0
3
C
4
16
5
L
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) L = Puk Case TO-200AC (B-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST330C..L Series
Bulletin I25154 rev. C 04/00
Outline Table
0.7 (0.03) MIN. 34 (1.34) DIA. MAX. TWO PLACES 2 7 (1 . 0 6 ) M AX .
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20 5 5 8 .5 (2 .3 ) D I A . M A X . 4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
Maximum Allowable Heatsink Temperatu re ( C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t ure ( C )
130 120 110 100 90
ST330C..L Series (Single Side Cooled) R thJ- hs (D C) = 0.11 K/W
130 120 110 100 90 80 70 60 50 40 30 20 0 2 00 30
ST 3 3 0 C ..L Se rie s (Sin g le S id e C o o le d ) R thJ-h s (D C ) = 0 .1 1 K / W
C o ndu ctio n A ng le
C o ndu ctio n Pe riod
80 70 60 50 40 30 0 50 100 150 200 250 300 350 400 450 Average On -state Current (A)
Fig. 1 - Current Ratings Characteristics
30
60
90
120 180
60 90 12 0 1 80 4 00 DC 60 0 80 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST330C..L Series
Bulletin I25154 rev. C 04/00
M a x im u m A llo w a b le H e a t sin k T e m p e ra t ure (C ) 130 120 110 100 90 80 70 60 50 40 30 20 0 2 00 4 00 600 80 0 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C on duc tio n Ang le
M a x im u m A llo w a b le H e a tsin k T e m p e ra tu re ( C )
ST 3 3 0 C ..L Se rie s (D o ub le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 5 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 2 00 40 0 30 60
ST 3 3 0 C ..L Se rie s (D o ub le Sid e C o o le d ) R thJ-hs (D C ) = 0 .0 5 K/ W
Co n duc tio n Pe riod
30
60
90
120
90 1 20 180 DC 6 00 8 00 1 00 0 1 2 00 1 40 0
180
A v e ra g e O n - sta t e C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
Maximum Average O n-state Power Loss (W )
Maximum Average On-state Power L oss (W)
1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 Average O n-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Co n duc tio n A ng le
2200 2000 1800 1600 1400 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Average O n-state Curren t (A)
Fig. 6- On-state Power Loss Characteristics
C o ndu ctio n Pe rio d
180 120 90 60 30
RMS L im it
DC 180 120 90 60 30
1200 RMS L im it
ST330C..L Series T J = 125C
ST330C..L Series T J = 125C
P e a k H a lf Sin e W a v e O n -st a t e C u rre n t (A )
7 50 0 7 00 0 6 50 0 6 00 0 5 50 0 5 00 0 4 50 0 4 00 0 3 50 0 1
A t A n y R a t e d Lo a d C o n d itio n A n d W it h R a t e d V RRM A p p lie d F o llo w in g Su rg e . In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
Peak Half Sine Wave On-state Curren t (A)
8 00 0
9000 8500
M axim um Non Repetitive Surge Current V ersus Pulse T rain Dura tion. Con trol 8000 Of Conduction May Not Be Maintain ed. Initial TJ = 125C 7500 No V oltag e Rea pplied Rated V RRM Rea pplied 7000 6500 6000 5500 5000 4500 4000 ST330C..L Series 0.1 Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
S T 3 3 0 C ..L S e r ie s 10 100
3500 0.01
1
N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
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ST330C..L Series
Bulletin I25154 rev. C 04/00
1 0 0 00 In st a n t a n e o u s O n -sta t e C u rre n t (A ) TJ = 25 C T J = 1 2 5 C
1 0 00
ST 3 3 0 C ..L Se rie s
10 0 0 .5 1 1 .5 2 2 . 5 3 3 . 5 4 4 .5 5 5 . 5 6 6 .5 7 In st a n t a n e o u s O n - st a te V o lt a g e (V )
Fig. 9 - On-state Voltage Drop Characteristics
1 St e a d y St a t e V a lu e R thJ-hs = 0 .1 1 K / W ( Sin gle Sid e C o o le d ) 0 .1 R thJ-hs = 0 .0 5 K / W ( D o u ble S id e C o o le d ) ( D C O p e rat io n )
T ra n sie n t Th e rm al Im p e da n c e Z thJ-hs ( K/W )
0 .0 1
ST 3 3 0 C ..L Se r ie s 0 .0 0 1 0 .0 0 1
0 .0 1
0 .1 Sq u a re W a v e P ulse D ur at io n ( s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100 In sta n t a n e o u s G at e V o lta g e ( V )
R e c t a n g ula r g a t e p ulse a ) Re c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra t e d d i/ d t : 1 0 V , 1 0 o h m s 10 tr< = 1 s (b )
Tj=-40 C
(1) (2) (3) (4) (a )
PGM PGM PGM PG M
= = = =
10W , 20W , 40W , 60W ,
tp tp tp tp
= = = =
4m s 2m s 1m s 0 .6 6 m s
Tj=2 5 C
Tj=125 C
1 VG D IG D 0. 1 0 .0 0 1 0 .0 1
(1)
(2)
(3) (4)
D e v ic e : ST 3 3 0 C ..L S e rie s 0 .1 1
Fre q u e n c y L im ite d b y P G ( A V ) 10 1 00
In sta n t a n e o u s G a te C u rre n t ( A )
Fig. 11 - Gate Characteristics
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