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 Bulletin I25156 rev. B 01/94
ST330S SERIES
PHASE CONTROL THYRISTORS Stud Version
Features
Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling
330A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical
ST330S
330 75 520 9000 9420 405 370 400 to 1600 100 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AE (TO-118)
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1
ST330S Series
Bulletin I25156 rev. B 01/94
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST330S 12 14 16
V DRM/V RRM, max. repetitive peak and off-state voltage V
400 800 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage V
500 900 1300 1500 1700
I DRM /IRRM max.
@ TJ = TJ max
mA
50
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST330S
330 75 520 9000 9420 7570 7920
Units Conditions
A C A DC @ 62C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave
I 2t
Maximum I2 t for fusing
405 370 287 262
I 2 t
Maximum I2 t for fusing
4050 0.91
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r
t1
V 0.92 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 0.57 1.51 600 1000 mA T J = 25 C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 1040A, TJ = TJ max, t = 10ms sine pulse
pk p
Low level value of on-state slope resistance
0.58
r
t2
High level value of on-state slope resistance
V TM IH IL
Max. on-state voltage Maximum holding current Typical latching current
2
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ST330S Series
Bulletin I25156 rev. B 01/94
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time
ST330S
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, t 1s r T J = TJ max, anode voltage 80% VDRM Gate current A, di g /dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 550A, T J = TJ max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, t = 500s
p
t
d
tq
100
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST330S
500 50
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST330S
10.0 2.0 3.0 20
Units Conditions
W A TJ = TJ max, t 5ms
p
PG(AV) Maximum average gate power IGM Max. peak positive gate current
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms
p
+VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 200 100 50 VGT DC gate voltage required to trigger 2.5 1.8 1.1 IGD VGD DC gate current not to trigger DC gate voltage not to trigger
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, tp 5ms
TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
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3
ST330S Series
Bulletin I25156 rev. B 01/94
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST330S
-40 to 125 -40 to 150 0.10
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10%
DC operation K/W
0.03 48.5 (425)
Mounting surface, smooth, flat and greased Nm Non lubricated threads (lbf-in) g See Outline Table
wt
Approximate weight Case style
535
TO - 209AE (TO-118)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.011 0.013 0.017 0.025 0.041 0.008 0.014 0.018 0.026 0.041 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
33
2
0
3
S
4
16
5
P
6
0
7 8
1 2 3 4 5 6
-
Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 16UNF threads M = Stud base metric threads (M24 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST330S Series
Bulletin I25156 rev. B 01/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX. 4.3 (0.17) DIA.
(0 .3 9 .5
4.5 (0.18) MAX.
7) M IN .
WHITE GATE 10.5 (0.41) NOM. RED SILICON RUBBER RED CATHODE 38 (1.50) MAX. DIA. 255 (10.04) 245 (9.65) 245 (9.65) 10 (0.39) FLEXIBLE LEAD C.S. 50mm 2 (0.078 s.i.)
22
(0.8 6)
WHITE SHRINK RED SHRINK
27.5 (1.08)
MAX.
SW 45
3/4"16 UNF-2A
21 (0.82) MAX.
47 (1.85) MAX.
Case Style TO-209AE (TO-118)
49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
25 (0. 98)
MIN .
Fast-on Terminals
AMP. 280000-1 REF-250
38 (1.5) 77. 5 (3.05) 80. 5 (3.17) DIA. MAX.
47 (1. 85)
Case Style TO-209AE (TO-118) with top thread terminal 3/8"
MAX.
21 (0.83)
All dimensions in millimeters (inches)
27.5 (1.08)
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
MAX.
MAX.
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5
ST330S Series
Bulletin I25156 rev. B 01/94
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 120 110
Conduction Angle
130 120 110 100 90 80 70 60 0 100
ST330S Series R thJC (DC) = 0.10 K/W
ST330S Series R thJC (DC) = 0.10 K/W
Conduction Period
100 30 90 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
60
90 120 180
30 60 90 120 200 300
180 400
DC 500 600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
480
440 400
360
320 280
240 200
180 120 90 60 30 RMS Limit
0. 08
hS Rt
0. 12
K/ W
A
= 0 .0
K/
W
3 W K/ a el t -D
0. 2
K/ W
R
160 120
80
Conduction Angle
0. 3 K/W 0.4 K /W 0 .6 K /W
40 0 0 50 100 150
ST330S Series TJ = 125C
1 .2 K/ W
200
250
300
350 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
650 600 550 500 450 400 350 300 RMS Limit 250 200 150 100 50 0 0 100 200 300
Conduction Period
DC 180 120 90 60 30
0. 0 8K
R
0.1
/W
2K /W
K/W
SA th
= 03 0. W K/ -D ta el R
0.2
0 .3
0 .4 K
K/W
ST330S Series TJ = 125C 400 500
/W 0. 6 K /W
1.2 K/W
25 600
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST330S Series
Bulletin I25156 rev. B 01/94
Peak Half Sine Wave On-state Current (A)
8000 Peak Half Sine Wave On-state Current (A) 7500 7000 6500 6000 5500 5000 4500 4000 3500 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
9000
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 8000 Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied 7000 Rated VRRM Reapplied 6000 5000 4000 3000 0.01
ST330S Series
ST330S Series
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A) TJ = 25C TJ = 125C
1000
ST330S Series
100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
(K/W) 1 Steady State Value R thJC = 0.10 K/W (DC Operation) 0.1
Transient Thermal Impedance Z
thJC
0.01 ST330S Series
0.001 0.001
0.01
0.1 Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance ZthJC Characteristic
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7
ST330S Series
Bulletin I25156 rev. B 01/94
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C
(1) (2) (3) (4) (a)
PGM = 10W, PGM = 20W, PGM = 40W, PGM = 60W,
tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms
Tj=125 C
1
(1)
(2) (3) (4)
VGD IGD 0. 1 0.001 0.01 Device: ST330S Series 0.1 1 Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
8
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