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Bulletin I25171 rev. B 03/94
ST333S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
330A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST333S
330 75 518 11000 11520 605 550 400 to 800 10 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AE (TO-118)
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1
ST333S Series
Bulletin I25171 rev. B 03/94
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST333S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 840 650 430 140 50 VDRM 50 50
ITM 180 el 600 450 230 60 50 50 75 1280 1280 1090 490 50 VDRM 50
o
ITM 100s 1040 910 730 250 50 75 5430 2150 1080 400 50 V DRM 50
ITM
Units
4350 1560 720 190 50 75 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST333S
330 75 518 11000 11520 9250 9700
Units
A C
Conditions
180 conduction, half sine wave DC @ 63C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
605 550 430 390 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
6050
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST333S Series
Bulletin I25171 rev. B 03/94
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r
t1
ST333S
1.51 0.91 0.92 0.58
Units
Conditions
ITM= 1040A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max.
Low level value of forward slope resistance m 0.58 600 1000 mA High level value of forward slope resistance Maximum holding current Typical latching current
r t2 IH IL
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST333S
1000 1.0 Min 10 Max 30
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST333S
500 50
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST333S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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3
ST333S Series
Bulletin I25171 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST333S
-40 to 125 -40 to 150 0.10 0.03 48.5 (425)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) g See Outline Table Mounting surface, smooth, flat and greased Non lubricated threads
wt
Approximate weight Case style
535
TO-209AE (TO-118)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.011 0.013 0.017 0.025 0.041 0.008 0.014 0.018 0.026 0.042 K/W
Conditions
T J = TJ max.
Ordering Information Table
Device Code
ST
1
33
2
3
3
S
4
08
5
P
6
F
7
M
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M24 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) dv/dt - tq combinations available
dv/dt (V/s) 10 12 15 t (s) q 18 20 25 30 20 CN CM CL CP CK --50 DN DM DL DP DK --100 EN EM EL EP EK --200 -FM * FL * FP FK FJ -400 --HL HP HK HJ HH
3 = Threaded top terminal 3/8" 24UNF-2A 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
4
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ST333S Series
Bulletin I25171 rev. B 03/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX. 4.3 (0.17) DIA. 4.5 (0.18) MAX.
37 )M 9 .5 (0 . IN .
WHITE GATE
(0
10.5 (0.41) NOM. RED SILICON RUBBER RED CATHODE 245 (9.65) 10 (0.39) FLEXIBLE LEAD C.S. 50mm 2 (0.078 s.i.)
38 (1.50) MAX. DIA. 255 (10.04) 245 (9.65)
22
.86 )
WHITE SHRINK RED SHRINK
27.5 (1.08)
MAX.
SW 45
21 (0.82) MAX.
47 (1.85) MAX.
3/4"16 UNF-2A 49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
25 (0.98)
77.5 (3.05)
80.5 (3.17)
MI N.
Fast-on Terminals
AMP. 280000-1 REF-250
38 (1.5) DIA. MAX.
47 (1.85)
21 (0.83)
27.5 (1.08)
All dimensions in millimeters (inches)
MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
MAX.
Case Style TO-209AE (TO-118) with top thread terminal 3/8"
MAX.
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5
ST333S Series
Bulletin I25171 rev. B 03/94
Maximum Allowable Case Temperature (C) 130 120 110
Conduction Angle
Maximum Allowable Case Temperature (C)
130 120 110 100 90 80 70 60 0 100
ST333S Series R thJC (DC) = 0.10 K/W
ST333S Series R thJC (DC) = 0.10 K/W
Conduction Period
100 90 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
30 60 90 120 180
30
60 90 120 200 300 180 400 DC 500 600
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
500
SA R th
06 0.
3K 0 .0
450 400 350 300 250 200
180 120 90 60 30 RMS Limit
0 .0 8 K/ W 0. 12 K/ W 0 .1 6K /W 0. 2 K/W
W K/
/W
= 0.0 1K /W e lt -D a R
0 .3
K /W
K/W
Conduction Angle
150 100 50 0
0 50 100 150 200 250 300
0 .5
ST333S Series TJ = 125C
350 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
700 600
500 400
DC 180 120 90 60 30
0 .0 3K /W 0. 0 6K /W
0. 1 2
K /W
300 RMS Limit
Conduction Period
200 100 0 0 100 200 300 400 500 ST333S Series TJ = 125C
0. 2 K/W 0 .3 K/W
R
SA th
= 01 0. W K/ -D ta el R
0. 5 K
/W
600 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST333S Series
Bulletin I25171 rev. B 03/94
Peak Half Sine Wave On-state Current (A)
10000 9000 8000 7000 6000 5000 4000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
11000
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 10000 Of Conduction May Not Be Maintained. Initial TJ = 125C 9000 No Voltage Reapplied Rated VRRM Reapplied 8000 7000 6000 5000 ST333S Series
ST333S Series
4000 0.01
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
10000 Instantaneous On-state Current (A) TJ = 25C TJ = 125C
1 Steady State Value R thJ C = 0.10 K/W (DC Operation) 0.1
1000
0.01 ST333S Series
ST333S Series
100 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Charge - Qrr (C)
300 280 260 240 220 200 180 160 140 120 100 80 10 20 30
I
TM
= 500 A 300 A 200 A 100 A 50 A
Maximum Reverse Recovery Current - Irr (A)
320
180
I
TM
160 140 120 100 80 60 40 20 10
= 500 A 300 A 200 A 100 A 50 A
ST333S Series TJ = 125 C
ST333S Series TJ = 125 C
40
50
60
70
80
90 100
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
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ST333S Series
Bulletin I25171 rev. B 03/94
1E4
Peak On-state Current (A)
1E3
1000 1500 2000 2500 3000
500
400 200 100 50 Hz
1000 1500
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM ST333S Series Sinusoidal pulse TC = 50C
500
400 200 100
50 Hz
2000 2500 3000
1E2
5000 tp
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM ST333S Series Sinusoidal pulse T C = 75C
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Peak On-state Current (A)
1E3
1000 1500 2000 2500
500
400
200 100
50 Hz
400 200 100 50 Hz
1E2
3000
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM ST333S Series Trapezoidal pulse TC = 50C di/dt = 50A/s
500 1000 1500 2000 2500 3000 ST333S Series Trapezoidal pulse TC = 75C di/dt = 50A/s Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Peak On-state Current (A)
1E3
1000 1500 2000 2500 3000
500
400
200
100
50 Hz
400 200 100 50 Hz Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM ST333S Series Trapezoidal pulse TC = 75C di/dt = 100A/s
1E2
Snubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM ST333S Series Trapezoidal pulse TC = 50C di/dt = 100A/s
2500 3000
500 1000 1500 2000
tp
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST333S Series
Bulletin I25171 rev. B 03/94
1E5
ST333S Series Rectangular pulse di/dt = 50A/s 20 joules per pulse 3 2 1 0.5 0.4 0.3
ST333S Series Sinusoidal pulse tp
Peak On-state Current (A)
tp
1E4
2 3 5 10
20 joules per pulse
5
10
1E3
0.3 0.2
1 0.5
1E2
0.2
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) (2) (3) (4) (a)
PGM = 10W, PGM = 20W, PGM = 40W, PGM = 60W,
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST333S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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9

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