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AM1517-025
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS
.REFRACTORY/ .EMI . .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
G OLD METALLIZATION T TER SITE BALLASTED :1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 25 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM1517-025 BRANDING 1517-25
PIN CONNECTION
The AM1517-025 power transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR :1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refactory/Gold metallization system. The AM1517-025 is supplied in the AMPACTM Hermetic/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC 100C)
45 2.5 30 200 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 3.3 C/W
*Applies only to rated RF amplifier operation
September 1992
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AM1517-025
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
BVCBO BVEBO ICBO hFE
IC = 8mA IE = 8mA VCB = 28V VCE = 5V
IE = 0mA IC = 0mA IC = 1.6A
45 3.0 -- 15
-- -- -- --
-- -- 2 150
V V mA --
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT c GP
Note:
f = 1.5 -- 1.7GHz f = 1.5 -- 1.7GHz f = 1.5 -- 1.7GHz
PIN = 3.5W PIN = 3.5W PIN = 3.5W
VCC = 28V VCC = 28V VCC = 28V
25 55 8.5
-- 58 --
-- -- --
W % dB
AM1517 series vary PIN to achi eve P OUT; perf ormance guaranteed in 50 MHz increment s. Alpha-Suff ix added t o AM1517 P/N designates band segment. A -1500 - 1550 MHz M -1620 - 1660 MHz S -1625 - 1675 MHz
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AM1517-025
TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT POWER OUTPUT vs TEMPERATURE
COLLECTOR EFFICIENCY vs TEMPERATURE
POWER OUTPUT & COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE
GAIN vs TEMPERATURE
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AM1517-025
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
POUT = 25 W VCC = 28 V Z O = 50 ohms
FREQ. L = 1.5 GHz M = 1.6 GHz H = 1.7 GHz
ZIN () 8.5 + j 13.0 8.0 + j 12.5 9.0 + j 12.0
ZCL () 12.0 - j 4.0 7.5 - j 4.5 9.0 - j 6.0
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
POUT = 25 W VCC = 28 V ZO = 50 ohms
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AM1517-025
TEST CIRCUIT
All dimensions are in inches.
Ref. Dwg. No.: C125383
PACKAGE MECHANICAL DATA
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AM1517-025
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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