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| Transistor 2SB1599 Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457 4.50.1 Unit: mm s Features q q 1.60.2 1.50.1 1.0+0.1 -0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0+0.25 -0.20 2.50.1 3 0.40.04 1 0.40.08 1.50.1 3 3 2 0.50.08 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings -50 -40 -5 -3 -1.5 1 150 -55 ~ +150 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3.00.15 45 MiniP3-F1 Package Marking symbol : 1X Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO IEBO VCBO VCEO hFE * Conditions VCB = -20V, IE = 0 VCE = -12V, IB = 0 VEB = -5V, IC = 0 IC = -1mA, IE = 0 IC = -10mA, IB = 0 VCE = -5V, IC = -1A IC = -1.5A, IB = -0.15A IC = -2A, IB = -0.2A VCB = -5V, IE = 0.5A, f = 200MHz VCB = -5V, IE = 0, f = 1MHz min typ max -1 -100 -100 Unit A A A V V -50 -40 80 - 0.4 220 -1 -1.5 150 70 VCE(sat) VBE(sat) fT Cob V V MHz pF *h FE Rank classification Q 80 ~ 160 R 100 ~ 220 hFE Rank Publication date: August 2002 SJC00095BED 0.4 max. 2.60.1 s Absolute Maximum Ratings (Ta=25C) 1 2SB1599 PC -- Ta 1.4 IC -- VCE TC=25C IB=-40mA -35mA VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 -10 Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. -4.0 -3.5 Collector current IC (A) 1.0 -3.0 -2.5 -2.0 -1.5 -1.0 -30mA -25mA -20mA -15mA -10mA -5mA -3 0.8 -1 0.6 - 0.3 Ta=100C 25C -25C 0.4 - 0.1 0.2 - 0.5 0 0 20 40 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 - 0.03 0 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -10 1000 hFE -- IC 240 VCE=-5V fT -- I E VCB=-5V f=50MHz Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -3 200 -3 25C -1 Ta=-25C 100C 300 TC=100C 25C 160 100 -25C 120 - 0.3 30 - 0.1 10 80 - 0.03 3 40 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Emitter current IE (A) Cob -- VCB 150 1000 IE=0 f=1MHz Ta=25C 120 ICEO -- Ta VCE=-12V Collector output capacitance Cob (pF) 300 ICEO (Ta) ICEO (Ta=25C) 100 90 30 60 10 30 3 0 -1 1 -3 -10 -30 -100 0 20 40 60 80 100 120 Collector to base voltage VCB (V) Ambient temperature Ta (C) 2 SJC00095BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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