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| Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 6.90.1 (0.4) 2.50.1 (1.0) (1.0) 3.50.1 2.00.2 2.40.2 (1.5) (1.5) s Features q q q 1.00.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 15 400 150 -55 ~ +150 Unit V 3 2 (2.5) 1 V V mA mW C C 1:Base 2:Collector 3:Emitter (2.5) 1.250.05 s Absolute Maximum Ratings (0.85) 0.450.05 (Ta=25C) 0.550.1 M-A1 Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Base to emitter voltage Transition frequency Noise figure Power gain Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO ICEO IEBO hFE* VBE fT NF PG Cre Conditions VCB = 10V, IE = 0 VCE = 20V, IB = 0 VEB = 3V, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCE = 6V, IC = 1mA 20 450 65 720 650 3.3 24 0.8 1 5 min typ max 100 10 1 260 mV MHz dB dB pF Unit nA A A *h FE Rank classification C 65 ~ 160 D 100 ~ 260 hFE Rank 4.10.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. R 0.9 R 0.7 4.50.1 Publication date: August 2002 SJC00113AED 1 2SC2377 PC -- Ta 500 12 Ta=25C 450 10 IB=100A 10 IC -- VCE 12 IC -- I B Ta=25C Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 VCE=10V 8 6V 80A 8 60A 6 40A 6 4 4 2 20A 2 0 0 6 12 18 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE=6V 25 25C 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 360 hFE -- IC VCE=6V Forward current transfer ratio hFE 300 Collector current IC (mA) Ta=75C 20 -25C 240 Ta=75C 25C 120 -25C 15 180 10 25C Ta=75C 5 -25C 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 1200 Ta=25C 1000 VCB=10V 800 6V 600 120 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 100 2.0 80 1.6 60 1.2 400 40 0.8 200 20 VCE=6V 10V 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 SJC00113AED 2SC2377 Cob -- VCB 1.2 PG -- IE IE=0 f=1MHz Ta=25C 40 35 f=100MHz Rg=50 Ta=25C VCE=10V 6V 12 NF -- IE f=100MHz Rg=50k Ta=25C Collector output capacitance Cob (pF) 1.0 10 0.8 Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 8 0.6 6 0.4 4 VCE=6V, 10V 0.2 2 0 0 5 10 15 20 25 30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 20 18 yie=gie+jbie VCE=10V -4mA bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V -1 -1mA -4mA IE=-7mA 58 -3 bfe -- gfe Forward transfer susceptance bfe (mS) 10.7 25 0 - 0.4mA -1mA 100 58 10.7 25 150 0 Input susceptance bie (mS) 16 14 12 10 8 6 4 25 58 -1mA IE=- 0.5mA -7mA -2mA 100 100 -20 150 -2mA -2 -40 150 100 -4mA 58 -60 f=150MHz IE=-7mA 100 58 25 -4 100 -80 -5 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 2 f=10.7MHz 0 0 3 6 9 12 15 -6 - 0.5 f=150MHz - 0.4 - 0.3 - 0.2 - 0.1 0 -120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe IE=- 0.5mA -1mA 1.2 150 -2mA -4mA 100 Output susceptance boe (mS) 1.0 0.8 -7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 yoe=goe+jboe VCE=10V Output conductance goe (mS) SJC00113AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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