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2SC454 Silicon NPN Epitaxial Application High frequency amplifier, mixer Outline 2SC454 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 200 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 -- -- 1 Typ -- -- -- -- -- -- 0.63 -- 230 -- -- 35 Max -- -- -- 0.5 0.5 500 0.75 0.2 -- 3.5 25 -- Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure IF power gain V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF IFG 100 -- -- -- -- -- -- V V MHz pF dB dB VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 VCE = 12 V, IC = 1 mA, f = 455 kHz, Rg = 1.5 k, RL = 40 k Note: B 1. The 2SC454 is grouped by h FE as follows. C 160 to 320 D 250 to 500 100 to 200 2 2SC454 Small Signal y Parameters (V CE = 12 V, IC = 2mA, Emitter Common) Item Input admittance Symbol yie f 455 kHz 1MHz Reverse transfer admittance yre 455 kHz 1MHz Forward transfer admittance yfe 455 kHz 1MHz Output admittance yoe 455 kHz 1MHz 2SC454B 0.35 + j0.074 0.35 + j0.130 -j0.005 -j0.013 66 - j2.43 66 - j4.27 0.006 + j0.02 0.006 + j0.047 2SC454C 0.28 + j0.070 0.28 + j0.125 -j0.005 -j0.013 64 - j2.60 66 - j5.7 0.007 + j0.022 0.007 + j0.049 mS mS mS Unit mS 3 2SC454 4 2SC454 5 2SC454 6 2SC454 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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