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2SC4900
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
* High gain bandwidth product fT = 9 GHz Typ * High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
2SC4900
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 9 1.5 50 150 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is "YJ-". I EBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 6.0 10.5 -- Typ -- -- -- -- 120 0.8 9.0 13.5 1.2 Max -- 10 1 10 250 1.3 -- -- 2.5 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 9 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
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2SC4900
S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 , Emitter Common)
Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.678 0.523 0.453 0.423 0.407 0.412 0.414 0.423 0.438 0.446 ANG. -67.0 -107.6 -135.8 -155.2 -172.1 174.7 163.5 152.3 143.2 135.7 S21 MAG. 11.09 7.49 5.43 4.24 3.47 2.94 2.54 2.26 2.05 1.87 ANG. 134.6 111.6 98.3 89.0 81.6 75.0 69.2 64.3 59.2 55.0 S12 MAG. 0.0572 0.0802 0.0933 0.105 0.118 0.130 0.145 0.158 0.174 0.189 ANG. 59.2 48.8 47.1 47.8 49.7 50.7 51.9 52.7 53.3 53.4 S22 MAG. 0.772 0.556 0.443 0.382 0.348 0.330 0.318 0.312 0.307 0.305 ANG. -34.7 -47.8 -53.7 -57.2 -60.2 -62.9 -66.5 -70.3 -74.4 -78.4
S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 , Emitter Common)
Freq. (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.420 0.362 0.351 0.352 0.361 0.364 0.373 0.386 0.396 0.414 ANG. -110.3 -148.9 -170.5 175.2 162.7 153.1 143.9 136.2 128.2 121.3 S21 MAG. 17.91 10.13 6.94 5.29 4.27 3.60 3.12 2.76 2.49 2.27 ANG. 115.5 98.4 89.2 82.9 77.1 72.3 67.9 63.6 59.4 55.5 S12 MAG. 0.0381 0.0572 0.0766 0.0966 0.117 0.138 0.158 0.178 0.199 0.218 ANG. 59.7 62.2 64.7 65.7 65.8 65.1 64.0 62.5 61.3 59.8 S22 MAG. 0.502 0.311 0.240 0.207 0.189 0.181 0.178 0.176 0.177 0.178 ANG. -54.1 -62.8 -66.1 -69.1 -71.6 -75.1 -79.3 -83.3 -87.5 -91.9
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When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
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