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| 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features * * * * * * * Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier Outline 2SJ160, 2SJ161, 2SJ162 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SJ160 2SJ161 2SJ162 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25C VGSS ID I DR Pch* Tch Tstg 1 Symbol VDSX Ratings -120 -140 -160 15 -7 -7 100 150 -55 to +150 Unit V V A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SJ160 2SJ161 2SJ162 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 1. Pulse test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX -120 -140 -160 15 -0.15 -- 0.7 -- -- -- -- -- Typ -- -- -- -- -- -- 1.0 900 400 40 230 110 Max -- -- -- -- -1.45 -12 1.4 -- -- -- -- -- Unit V V V V V V S pF pF pF ns ns VDD = -20 V, ID = -4 A I G = 100 A, VDS = 0 I D = -100 mA, V DS = -10 V I D = -7 A, VGD = 0*1 I D = -3 A, VDS = -10 V*1 VGS = 5 V, VDS = -10V, f = 1 MHz Test conditions I D = -10 mA , VGS = 10 V 2 2SJ160, 2SJ161, 2SJ162 3 2SJ160, 2SJ161, 2SJ162 4 2SJ160, 2SJ161, 2SJ162 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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