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| 2SJ351, 2SJ352 Silicon P-Channel MOS FET Application TO-3P Low frequency power amplifier Complementary pair with 2SK2220 2SK2221 Features * * * * * * * High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes 3 1 1 2 3 1. Gate 2. Source 3. Drain Table 1 Ordering Information Type No. 2SJ351 2SJ352 VDSS -180 V -200 V 2 ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SJ351 Symbol VDSX Ratings -180 Unit V -------------------------------------------------------------------------------------- -------- 2SJ352 Gate to source voltage Drain current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID IDR Pch* Tch Tstg ------ -200 20 -8 -8 100 150 -55 to +150 V A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * Value at Tc = 25 C 2SJ351, 2SJ352 Table 3 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SJ351 Symbol V(BR)DSX Min -180 -200 V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff 20 Typ -- -- -- Max -- -- -- V IG = 100 A, VDS = 0 ID = -100 mA VDS = -10 V Unit V Test conditions ID = -10 mA, VGS = 10 V -------------------------------------------------------------------------------------- -------- 2SJ352 Gate to source breakdown voltage Gate to source cutoff voltage -------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -0.15 -- -1.45 V -------------------------------------------------------------------------------------- Drain to source saturation voltage Forward transfer admittance -- -- -12 V ID = -8 A, VGD = 0 V* ID = -3 A VDS = -10 V * VGS = 5 V VDS = -10 V f = 1 MHz VDD = -30 V ID = -4 A -------------------------------------------------------------------------------------- 0.7 1.0 1.4 S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time * Pulse Test -- -- -- -- -- 800 1000 18 320 120 -- -- -- -- -- pF pF pF ns ns ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SJ351, 2SJ352 Power vs. Temperature Derating 160 Pch (W) -20 -10 Drain Current ID (A) Maximum Safe Operation Area IDmax (Continuous) Ta = 25C ot Sh ot 1 Sh s m s1 10 m ) 0 = ot C 10 Sh 25 PW = = 1 s TC PW 1 ( = on ti PW era p O C 120 -5 D Channel Dissipation 80 -2 -1.0 -0.5 40 2SJ351 2SJ352 -500 0 50 100 150 Tc (C) 200 -0.2 -5 Case Temperature -10 -20 -50 -100 -200 Drain to Source Voltage VDS (V) Typical Output Characteristics -10 -10 Typical Output Characteristics TC = 25C -8 Drain Current ID (A) -8 -6 -7 -6 -4 -5 -4 -2 -3 -2 -1 -50 0 -2 -4 -6 -8 Drain to Source Voltage VDS (V) -10 0V -9 TC = 25C = -1 VGS = -10 V -8 Drain Current ID (A) -8 -7 -6 -5 Pc -9 -6 VG S h= -4 12 -4 -3 5W -2 -2 -1 0 0 -10 -20 -30 -40 Drain to Source Voltage VDS (V) 2SJ351, 2SJ352 Typical Transfer Characteristics -10 VDS = -10 V -1.0 Typical Transfer Characteristics Drain Current ID (A) Drain Current ID (A) C -6 75 -0.6 T -4 -0.4 -2 -0.2 0 -2 -4 -6 -8 Gate to Source Voltage VGS (V) -10 0 -0.4 -0.8 -1.2 -1.6 Gate to Source Voltage VGS (V) T C =- 25 C 25 75 -2.0 Switching Time vs. Drain Current ton toff -0.2 -0.5 -1.0 -2 Drain Current ID (A) -5 -10 =- 25 C -8 -0.8 25 VDS = -10 V Forward Transfer Admittance vs. Frequency 5 Forward Transfer Admittance yfs (S) 1.0 Switching Time ton, toff (ns) 10 M 20 M 500 200 100 50 100 m 10 m TC = 25C VDS = -10 V ID = -2 A 20 10 5 -0.1 1m 0.5 m 2k 10 k 100 k 1M Frequency f (Hz) 2SJ351, 2SJ352 Switching Time Test Circuit Output 2 Input ton PW = 50 s duty ratio = 1% -30 V 50 90% Output Input 10% Waveforms 90% toff 10% |
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