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| 2SK1517, 2SK1518 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1517, 2SK1518 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 20 80 20 120 150 -55 to +150 Unit V V A A A W C C 2 2SK1517, 2SK1518 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1517 V(BR)DSS 2SK1518 V(BR)GSS IGSS 450 500 30 -- -- -- -- -- -- 10 250 V A A V S pF pF pF ns ns ns ns V ns IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 100 A/s ID = 10 A, VGS = 10 V, RL = 3 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 -- -- -- -- -- -- -- -- -- -- 0.20 0.22 16 3050 940 140 35 130 240 105 1.0 120 3.0 0.25 0.27 -- -- -- -- -- -- -- -- -- -- ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1517 IDSS 2SK1518 Gate to source cutoff voltage ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 V * 1 Static Drain to source 2SK1517 RDS(on) on state resistance 2SK1518 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 3 2SK1517, 2SK1518 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 100 sa re a O is per lim at ite ion d in by th Ri 30 Drain Current ID (A) 100 10 3 1 0.3 D C PW O pe 10 = 1 10 n m s m s 10 0 s (o n) s DS ra tio (T (1 = C 50 ot 25 ) C ) Sh Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 2SK1518 2SK1517 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 40 Drain Current ID (A) Typical Transfer Characteristics 20 7V 6V 16 Drain Current ID (A) VDS = 20 V Pulse Test Pulse Test 30 12 20 5V 8 75C 25C TC = - 25C 10 VGS = 4 V 0 20 50 10 30 40 Drain to Source Voltage VDS (V) 4 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1517, 2SK1518 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () 10 Pulse Test 5 8 2 1 0.5 Pulse Test 6 20 A 4 10 A 2 ID = 5 A VGS = 10 V 15 V 0.2 0.1 0.05 1 2 0 4 12 16 8 20 Gate to Source Voltage VGS (V) 5 10 20 50 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test VGS = 10 V 0.8 Forward Transfer Admittance yfs (S) 1.0 Forward Transfer Admittance vs. Drain Current 5 VDS = 20 V Pulse Test -25C TC = 25C 75C 2 1 0.5 0.6 ID = 20 A 0.4 10 A 5A 0.2 0.2 0.1 0.05 0.2 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.5 1 2 5 Drain Current ID (A) 10 20 5 2SK1517, 2SK1518 Body to Drain Diode Reverse Recovery Time 5,000 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 2,000 1,000 500 Capacitance C (pF) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test Ciss 1,000 Coss 200 100 50 0.5 100 Crss 10 1 2 5 10 20 Reverse Drain Current IDR (A) 50 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Switching Characteristics 20 500 td (off) Switching Time t (ns) 400 VDD = 100 V 250 V 400 V VDS VGS 16 200 100 50 tf tr 300 12 td (on) 200 VDD = 400 V 250V 100 V ID = 20 A 8 20 VGS = 10 V VDD = 30 V 10 PW = 2 s, duty < 1% * * 100 4 0 40 120 160 80 Gate Charge Qg (nc) 0 200 5 0.5 1 2 5 10 20 Drain Current ID (A) 50 6 2SK1517, 2SK1518 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test 12 5V 8 10 V 4 VGS = 0, -10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 ch-c (t) = S (t) * ch-c ch-c = 1.08C/W, TC = 25C PDM PW 1 D = PW T TC = 25C 1.0 0.05 0.02 0.03 0.01 Pulse hot 1S 0.01 10 100 1m 10 m Pulse Width PW (s) 100 m T 10 Switching Time Test Circuit Waveforms Vin Monitor Vout Monitor D.U.T RL 90% Vin Vout 10% 10% 10% 90% td (off) 50 Vin 10 V VDD . = 30 V . td (on) 90% tr tf 7 2SK1517, 2SK1518 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 |
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