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2SK1670
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC - DC converter
Outline
TO-3PFM
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1670
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg
2 1
Ratings 250 30 30 120 30 60 150 -55 to +150
Unit V V A A A W C C
2
2SK1670
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 250 30 -- -- 2.0 -- 12 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.075 20 3100 1330 190 45 170 250 150 1.0 90 Max -- -- 10 250 3.0 0.095 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s ID = 15 A, VGS = 10 V, RL = 2 Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz
1
Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test
1
See characteristic curves of 2SK1669.
3
2SK1670
Power vs. Temperature Derating 120
1,000 300 Drain Current ID (A) 100 30
DC
PW =
1
Maximum Safe Operation Area
Channel Dissipation Pch (W)
80
10
10
0
10 3
Op
10
m
s s
s
er
m
at
ion
s(
1
40
Ta = 25C 1
(T
Sh
C
=
ot
)
25
C
)
0.3 Operation in this area is limited by RDS (on) 0.1
0
50 100 Case Temperature TC (C)
150
1
3 30 10 100 300 1,000 Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 TC = 25C
1.0
0.1
0.05
ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM D = PW T
0.03 0.01 10
0.02 0.01
1S hot
se Pul
100 1m 10 m Pulse Width PW (s) 100 m
T
PW
1
10
4
2SK1670
Notice
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
5

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