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| 2SK2116, 2SK2117 Silicon N Channel MOS FET Application TO-220CFM High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator 2 12 1 3 1. Gate 2. Drain 3. Source Table 1 Ordering Information Type No. 2SK2116 2SK2117 VDSS 3 ---------------------------------------- 450 V 500 V ---------------------------------------- ---------------------------------------- Table 2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK2116 Symbol VDSS VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK2117 Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature ------ 500 30 7 28 7 35 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2116, 2SK2117 Table 3 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK2116 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK2117 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK2116 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK2117 Gate to source cutoff voltage VGS(off) 2.0 -- -- 4.0 -- 0.6 0.7 6.5 3.0 0.8 0.9 -- S ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 V ------------------ VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Static drain to source 2SK2116 RDS(on) on state resistance -------- 2SK2117 Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr ID = 4 A, VGS = 10 V * ---------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test s See characteristic curve of 2SK1157, 2SK1158. -- -- -- -- -- -- -- -- 1050 280 40 15 55 95 40 0.95 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 320 -- ns -------------------------------------------------------------------------------------- 2SK2116, 2SK2117 Power vs. Temperature Derating 40 Pch (W) 50 20 Maximum Safe Operation Area 10 10 D PW 30 Drain Current ID (A) 10 5 2 1 0.5 0.2 0.1 C 0 s = 1 10 m m s s Channel Dissipation O s Sh 20 pe ra tio n (1 (T C = 10 Operation in this Area is Limited by RDS (on) ot ) 25 C ) Ta = 25C 1 0.05 2SK1567 2SK1566 0 50 100 150 Tc (C) 200 Case Temperature 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C PDM D = PW T TC = 25C 1.0 0.03 0.01 10 1S ho lse t Pu 100 1m 10 m 100 m Pulse Width PW (s) T PW 1 10 |
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