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| 2SK2590 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control D 2 1 G 1 3 S 2 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 200 20 7 28 7 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2590 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS =160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.33 10 250 4.0 0.45 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3.0 4.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time -- -- -- -- -- -- -- -- 700 260 45 20 45 50 35 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 150 -- ns -------------------------------------------------------------------------------------- * Pulse Test See characteristics curves of 2SK1957. 2SK2590 Maximum Channel Dissipation Curve 80 Pch (mW) I D (A) Maximum Safe Operation Area 50 30 10 C D 10 s s 0 10 60 PW pe O = 1 m s 10 Drain Current 3 m s Channel Dissipation (1 40 1 this area is 0.3 0.1 0.05 Operation in Sh limited by R DS(on) ra tio n ot ) c (T = 25 C 20 ) Ta = 25 C 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) 0 50 100 150 Tc (C) 200 Case Temperature Package Dimensions Unit : mm * TO-220AB 11.5 max 9.8 max 7.6 min 3.0max 1.27 0.1 f 3.6 + 0.08 - 4.8 max 1.5 max 6.3 min 18.5 0.5 1.5 max 12.7 min 15.3 max 0.5 7.8 0.5 0.76 0.1 2.5 0.5 5.1 0.5 2.7 max Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC 2SK2590 Package Dimensions Unit : mm * TO-220AB 11.5 max 9.8 max 7.6 min 3.0max 1.27 0.1 f 3.6 + 0.08 - 4.8 max 1.5 max 6.3 min 18.5 0.5 1.5 max 12.7 min 15.3 max 0.5 7.8 0.5 0.76 0.1 2.5 0.5 5.1 0.5 2.7 max Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC |
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