 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 (Z) 1st. Edition May 1997 Features * Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 3 D 2 2 1 4 1 G 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2788 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse) Pch Tch Tstg Note1 Ratings 60 20 2 4 2 Unit V V A A A W C C Body to drain diode reverse drain current IDR Channel dissipation Channel temperature Storage temperature Note2 1 150 -55 to +150 Notes: 1. PW 10s, duty cycle 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm) 2 2SK2788 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Notes: 3. Pulse test 4. Marking is "VY" Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 20 -- -- 1.0 -- -- 1.6 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 0.16 2.8 180 90 30 9 15 40 35 0.9 35 Max -- -- 10 10 2.0 0.16 0.25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns ID = 2A, VGS = 0 IF = 2A, VGS = 0 diF/ dt = 50A/s Test Conditions ID = 10mA, VGS = 0 IG = 100A, VDS = 0 VDS = 60 V, VGS = 0 VGS = 16V, VDS = 0 ID = 1mA, VDS = 10V ID = 1 A, VGS = 10V ID = 1A, VGS = 4V VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 1A RL = 30 ID = 1A, VDS = 10V Note3 Note3 Note3 3 2SK2788 Main Characteristics Power vs. Temperature Derating 2.0 Pch (W) I D (A) Test condition : When using the alumina ceramic board (12.5 x 20 x 0.7 mm) 10 100 s 3 1 C D Maximum Safe Operation Area 1.5 PW = 1 10 m s m s pe O Channel Dissipation Drain Current (1 1.0 0.3 Operation in this area is 0.1 limited by R DS(on) 0.03 sh ra tio n c (T = ot ) ) C 25 0.5 0 50 100 150 200 Ambient Temperature Ta (C) 0.01 Ta = 25 C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) 5 Typical Output Characteristics 10 V 6 V 5V 4V 3.5 V Pulse Test Typical Transfer Characteristics 5 25C -25C 4 Tc = 75C I D (A) 4 3V 3 3 Drain Current 2 2.5 V 1 VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 2 1 V DS = 10 V Pulse Test 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 4 2SK2788 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source on State Resistance R DS(on) ( ) 2.0 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 VGS = 4 V 10 V 0.3 3 1 Drain Current 30 10 I D (A) 100 1.6 1.2 0.8 ID=5A 0.2 0.1 0.4 2A 1A 6 2 4 Gate to Source Voltage 8 10 V GS (V) 0 0.05 0.1 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 2A 0.3 V GS = 4 V 0.2 5A 0.1 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) 1, 2 A ID=5A 1A Forward Transfer Admittance vs. Drain Current 10 Tc = -25 C 5 2 1 0.5 75 C 25 C 0.2 0.1 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 Drain Current I D (A) 10 5 2SK2788 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 20 10 5 0.1 di / dt = 50 A / s V GS = 0, Ta = 25 C 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 1000 500 Capacitance C (pF) 200 100 50 Ciss Coss 20 Crss 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 ID=2A V DD = 10 V 25 V 50 V 20 100 50 Switching Time t (ns) 20 10 5 Switching Characteristics t d(off) tf tr t d(on) 80 16 Drain to Source Voltage 60 V DS 40 V GS 12 8 20 V DD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nc) 4 0 10 Gate to Source Voltage 2 1 0.1 0.2 V GS = 0 V, V DD = 30 V PW = 5 s, duty < 1 % 0.5 1 Drain Current 2 5 I D (A) 10 0 6 2SK2788 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) 8 5V 6 10 V V GS = 0, -5 V 4 2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% Vout Monitor Waveform 90% 10% 90% 90% td(off) 10% td(on) tr tf 7 2SK2788 Package Dimensions Unit: mm 4.5 0.1 0.4 1.8 max 1.5 0.1 0.44 max 1.0 1.5 1.5 3.0 0.8 min 0.53 max 0.48 max 1 2 3 2.5 0.1 4.25 max 4 0.44 max Hitachi Code EIAJ JEDEC UPAK SC-62 - 8 2SK2788 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 9 |
Price & Availability of 2SK2788
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |