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| (R) SMTPAxxx TELECOM EQUIPMENT PROTECTION: TRISILTM FEATURES s s s s s s Bidirectional crowbar protection Voltage range from 62V to 270V Low capacitance from 15pF to 30pF typ.@ 50V Low leakage current: IR = 2A max. Holding current: IH = 150 mA Min. Repetitive peak pulse current: IPP = 50 A (10/1000 s) SMB (JEDEC DO-214AA) MAIN APPLICATIONS Telecommunication equipment such as: Analog and digital line cards (xDSL, T1/E1, ISDN...). Terminals (phone, fax, modem...) and central office equipment. s s SCHEMATIC DIAGRAM DESCRIPTION The SMTPAxxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. The package / die size ratio has been optimized by using the SMB package. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459 and FCC part 68. Trisils have UL94 V0 resin approved. SMB package is JEDEC registred. (Trisils are UL 497B approved - file: E136224). November 2002 - Ed: 4B 1/8 SMTPAxxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS Standard GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20 / K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Parameter Junction to ambient with recommended footprint Junction to leads Value 100 20 Unit C/W C/W Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 6000 8000 4000 2000 4000 2000 4000 4000 1500 800 1000 Voltage Waveform (s) 2/10 10/1000 2/10 2/10 10/700 1/60 ns 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 Required peak current (A) 500 100 500 100 150 37.5 Current Waveform (s) 2/10 10/1000 2/10 2/10 5/310 Minimum serial resistor to meet standard () 12 10 24 0 53 0 0 0 21.5 0 0 0 21.5 0 12.5 6.5 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 1/20 5/310 8/20 10/160 10/560 5/320 ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR VBR VBO IH IBO IPP C 2/8 Parameter Stand-off voltage Leakage current at VRM Continuous reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance SMTPAxxx ABSOLUTE RATINGS (Tamb = 25C) Symbol Parameter Repetitive peak pulse current: 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s Fail safe mode: maximum current Non repetitive surge peak on-state current (Sinusoidal) 8/20 s t = 20ms t = 16.6ms t = 0.2s t = 2s t = 16.6ms t = 20ms 50 100 55 65 75 100 150 2.5 30 32 17 9 8.5 9 260 - 55 to + 150 150 Value Unit IPP A IFS ITSM kA A It TL Tstg Tj It value for fusing Maximum lead temperature for soldering during 10 s. Storage temperature range Maximum junction temperature As C C C Repetitive peak pulse current tr: rise time (s) tp: pulse duration time (s) ex.: Pulse waveform 10/1000s tr = 10s tp = 1000s % IPP 100 50 0 tr tp t 3/8 SMTPAxxx ELECTRICAL PARAMETERS (Tamb = 25C) Type IRM @ VRM max IR @ VR MAX Note 1 A V A V DYNAMIC VBO @ IBO max Note 2 V mA STATIC VBO @ IBO max Note 3 V mA IH min C typ. C typ. Note 4 Note 5 Note 6 mA pF pF SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: 56 61 90 108 2 117 162 180 198 216 243 50 62 68 100 120 130 180 200 220 240 270 85 93 135 160 173 235 262 285 300 350 800 82 90 133 160 173 240 267 293 320 360 800 150 150 150 150 150 150 150 150 150 150 30 30 20 20 20 15 15 15 15 15 50 45 40 40 35 30 30 30 30 30 IR measured at VR guarantee VBRmin VR See functional breakover voltage test circuit 1. See test circuit 2. See functional holding current test circuit 3. VR = 50V bias,VRMS = 1V, F = 1MHz. VR = 2V bias, VRMS = 1V, F = 1MHz Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial = 25C) ITSM(A) 40 35 30 25 20 15 10 5 0 1E-2 1E-1 1E+0 F=50Hz Fig. 2: On-state voltage versus on-state current (typical values). IT(A) 50 Tj=25C 20 10 5 2 t(S) 1E+1 1E+2 1E+3 VT(V) 1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 4/8 SMTPAxxx Fig. 3: Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25C] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 1.04 1.02 1.00 0.98 1.08 1.06 Fig. 4: Relative variation of breakover voltage versus junction temperature. VBO[Tj] / VBO[Tj=25C] Tj(C) 40 60 80 100 120 0.96 0.94 -40 Tj(C) -20 0 20 40 60 80 100 120 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). IRM[Tj] / IRM[Tj=25C] 2000 1000 VR=VRM Fig. 6: Relative variation of thermal impedance versus pulse duration. Zth(j-a)(C/W) 1E+2 Zth(j-a) 100 1E+1 10 1E+0 Tj(C) 1 25 50 75 100 125 1E-1 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values). C[VR] / C[VR=50V] 2.5 2.0 1.5 1.0 0.5 Tj=25C F=1MHz VRMS=1V VR(V) 0.0 1 2 5 10 20 50 100 300 5/8 SMTPAxxx TEST CIRCUIT 1 FOR DYNAMIC IBO and VBO PARAMETERS 100 V / s, di/dt < 10 A / s, Ipp = 50A 2 45 66 470 83 0.36 nF 46 H U 10 F Key Tek `System 2' generator with PN246I module 1 kV / s, di/dt < 10 A / s, Ipp = 10 A 26 H 250 12 47 46 H U 60 F Key Tek `System 2' generator with PN246I module TEST CIRCUIT 2 for IBO AND VBO PARAMETERS. K ton = 20ms R1 = 140 R2 = 240 220V 50Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE : s s Pulse test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . 6/8 SMTPAxxx TEST CIRCUIT 3 for IH PARAMETERS. R Surge generator VBAT = - 48 V D.U.T This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 s. - The D.U.T. will come back to the off-state within 50 ms max. PACKAGE MECHANICAL DATA SMB (JEDEC DO-214AA) E1 DIMENSIONS REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E c A1 E E1 D b C L A2 L FOOT PRINT in millimeters (inches) 2.3 (0.09) 1.52 (0.059) 2.75 (0.108) 1.52 (0.059) 7/8 SMTPAxxx ORDER CODE SM Surface Mount TPA xx Voltage TrisilTM protection: IPP = 50A ORDERING INFORMATION Part number SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 Marking U01 U05 U13 U17 U19 U25 U27 U31 U35 U39 SMB 0.11 g 5000 Tape & reel Package Weight Base qty Delivery mode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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