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| (R) T10xxxH STANDARD TRIACS FEATURES IT(RMS) = 10A VDRM = 400V to 800V High surge current capability A1 A2 G DESCRIPTION The T10xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 1 A/s. IG = 500 mA Tc= 95 C tp = 8.3 ms tp = 10 ms I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 10 105 100 50 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s Unit A A TO220 non-insulated (Plastic) Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T10xxxH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.C Junction to case for A.C 360 conduction angle (F=50Hz) Parameter Value 60 3.3 2.5 Unit C/W C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant 10 I-II-III IV VGT VGD tgt VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA IT = 14A dIG/dt = 3A/s IT= 250 mA Gate open IG= 1.2 IGT Tj= 25C Tj= 125C Tj= 25C I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MAX MIN TYP 25 25 Sensitivity 12 50 50 1.5 0.2 2 13 50 75 V V s mA Unit IGM = 4 A (tp = 20 s) IH * IL Tj= 25C Tj= 25C I-III-IV II MAX TYP TYP MAX MAX MAX MIN MIN 25 25 50 50 50 100 1.5 10 2 75 75 150 mA mA VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 14A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 4.4 A/ms Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C V A mA 500 10 V/s V/s 200 2 500 5 * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 10 12 SENSITIVITY M H PACKAGE : H = TO220 Non-insulated VOLTAGE (R) T10xxxH Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) Rth = 0 o C/W 2.5 o C/W o 5 C/W 7.5 o C/W P(W) 14 12 10 8 6 4 2 0 0 1 14 180 O -90 -95 -100 -105 -110 -115 -120 = 180 = 120 = 90 = 60 = 30 o o o o o 12 10 8 6 4 I T(RMS) (A) 2 3 4 5 6 7 8 9 10 2 Tamb (oC) 0 0 20 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 12 10 Zt h( j-c) 8 6 4 2 Tcase ( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 o 0.1 = 180 o Zt h( j-a) tp (s) 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 100 Tj initial = 25 C o 80 60 40 20 Tj(oC) Ih Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 (R) T10xxxH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) Tj initial = 25 oC 1000 I TSM 100 Tj initial o 25 C 100 I2t Tj max 10 10 Tj max Vto =0.86V Rt =0.04 2 t (ms) VTM (V) 1 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 4/5 (R) T10xxxH PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. A G I B C O P N1 N F D M L J H A B C D F G H I J L M N N1 O P Marking : type number Weight : 1.8 g 2.54 1.2 1.4 1.15 2.7 5.3 0.100 0.047 0.055 0.045 4.5 3.53 1.2 6.3 12.7 4.2 3.0 4.7 3.66 1.3 0.9 0.106 0.209 10.3 6.5 9.1 0.500 0.165 0.118 0.177 0.185 0.139 0.144 0.047 0.051 0.035 0.248 0.256 0.358 0.406 REF. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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