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| (R) X02xxxN SENSITIVE GATE SCR FEATURES IT(RMS) = 1.4A VDRM = 200V to 800V Low IGT < 200 A K A G A DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount technology. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) * Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 10 mA Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Ttab= 90C Ta=75C IT(AV) * Ttab= 90C Ta=75C ITSM tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl tp = 10 ms Value 1.4 1.0 0.9 0.64 25 22.5 2.5 30 - 40, + 150 - 40, + 125 260 Unit A A A A A A A2s A/s C C SOT223 (Plastic) * : With 5cm2 copper (e=35m) surface under tab. Symbol VDRM VRRM Parameter B Repetitive peak off-state voltage Tj = 125C RGK = 1K 200 Voltage D 400 M 600 N 800 Unit V 1/5 May 1998 Ed: 1A X02xxxN THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-t) Junction to ambient * Junction to tab for DC Parameter Value 60 25 Unit C/W C/W * : With 5cm2 copper (e=35m) surface under tab. GATE CHARACTERISTICS (maximum values) PG (AV)= 0.2 W PGM = 3 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10A VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 2.8A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR=35V dI/dt=10A/s tp=100s dV/dt=2V/s VD= 67%VDRM RGK = 1 K Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C Tj= 110C MAX MIN MIN TYP MAX MAX MAX MAX MAX TYP MAX 15 200 Sensitivity 03 20 200 0.8 0.1 8 0.5 5 6 1.5 5 200 20 100 15 05 20 50 V V V s mA mA V A A V/s s A Unit IGM = 1.2 A (tp = 20 s) ORDERING INFORMATION X SCR TOP GLASS CURRENT 02 03 SENSITIVITY M N PACKAGE : N = SOT223 VOLTAGE 2/5 X02xxxN Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Ttab). P (W) 1.4 360 O P (W) 1.4 Rth(j-t) Ttab (o C) -85 1.2 DC 1.2 o 1.0 = 180 1.0 Rth(j-a) -95 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 = 30 o = 60 o = 120 = 90 o o 0.8 -105 0.6 0.4 -115 Tamb ( C) o I T(AV)(A) 0.2 1.4 0.6 0.8 1.0 1.2 0.0 0 20 40 60 80 100 120 -125 140 Fig.3 : Average on-state current versus tab temperature. I T(AV) (A) Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 1.6 DC 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 = 180 o 0.10 Standard foot print , e(Cu)=35 m Ttab ( C) 60 70 80 90 100 110 120 130 o tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih Igt Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) Ih[Tj] Ih[Tj=25 o C] 25 Tj initial = 25 C o 20 15 10 5 Tj(oC) 0 20 40 60 80 100 120 140 Number of cycles 0 1 10 100 1000 3/5 X02xxxN Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) Tj initial = 25oC 100 100 Tj initial o 25 C I TSM 10 Tj max 10 1 I2 t Tj max Vto =1.05V Rt =0.150 tp(ms) VTM (V) 1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4/5 X02xxxN PACKAGE MECHANICAL DATA SOT223 (Plastic) DIMENSIONS V1 REF. C Millimeters 1.50 0.02 2.95 0.65 0.25 6.30 2.3 4.6 3.30 6.70 0.63 0.85 1.10 1.70 0.10 3.15 0.85 0.35 6.70 0.059 0.001 0.090 0.026 0.010 0.248 Inches 0.067 0.004 0.124 0.033 0.014 0.264 0.091 0.181 Min. Typ. Max. Min. Typ. Max. A A1 B1 e1 D B t V A1 V2 O HE e S A A1 B B1 C D e e1 E H O S t V V1 V2 3.70 0.130 0.146 7.30 0.264 0.287 0.65 0.67 0.025 0.026 0.026 1.05 0.033 0.041 1.30 0.043 0.051 10 max 10 min 16max 10 min 16max Weight : 0.11 g FOOT PRINT MARKING Type X0202BN X0202DN X0202MN X0202NN X0203BN X0203DN X0203MN X0203NN X0205BN X0205DN X0205MN X0205NN Marking X2B X2D X2M X2N X3B X3D X3M X3N X5B X5D X5M X5N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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