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MJD340 MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s s s s
s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO MJE340 AND MJE350
3 1
DPAK TO-252 (Suffix "T4")
APPLICATIONS s SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp = 25 o C) Total Power Dissipation at T case 25 o C Storage T emperature Max Operating Junction T emperature Valu e MJD340 MJD350 300 300 3 0.5 0.75 15 -65 to 150 150 V V V A A W
o o
Un it
C C
For PNP types voltage and current values are negative.
June 1997
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MJD340 / MJD350
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CBO I EBO V CEO(sus) h FE Parameter Collector Cut-off Current (v bE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage DC Current G ain Test Cond ition s V CB = 300 V V EB = 3 V I C = 1 mA I C = 50 mA V CE = 10 V 300 30 240 Min. Typ . Max. 0.1 0.1 Un it mA mA V
Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curve
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MJD340 / MJD350
DC Current Gain (NPN type) DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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MJD340 / MJD350
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A" B
=
=
3
B2
E
=
=
G
2
L4
1
=
=
A2
0068772-B
4/5
MJD340 / MJD350
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit for the y consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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