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| THD200FI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) APPLICATIONS: s HORIZONTAL DEFLECTION FOR MONITORS DESCRIPTION The THD200FI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. 1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 10 20 5 10 57 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 September 1997 THD200FI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat ) V BE(s at) h FE Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain RESISTIVE LO AD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA I E = 10 mA IC = 7 A IC = 7 A IC = 7 A IC = 7 A IB = 1.5 A IB = 1.5 A VCE = 5 V VCE = 5 V 6.5 4 2.1 140 3.5 320 700 10 1.5 1.3 13 Tj = 125 C o Min. Typ . Max. 0.2 2 100 Un it mA mA A V V V V Tj = 100 C o ts tf ts tf V CC = 400 V I B1 = 1.5 A IC = 7 A I B1 = 1.5 A IC = 7 A IB2 = 3.5 A 3.1 210 s ns s ns f = 31250 Hz IB2 = -3.5 A V c eflybac k = 1200 sin 106 t 5 f = 64 KHz IB2 = -3.5 A V c eflybac k = 1200 sin 106 t 5 V ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 7 A I B1 = 1.5 A V 1.7 215 s ns Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/7 THD200FI Safe Operating AreaDerating Curve Thermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 THD200FI Power Losses at 32 KHz Switching Time Inductive Load at 32 KHz (see figure 2) Power Losses at 64 KHz Switching Time Inductive Load at 64 KHz (see figure 2) Reverse Biased SOA 4/7 THD200FI BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at Tj = 100 oC (line scan phase). On the other hand, negative base current I B2 must be provided turn off the power transistor (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 32 KHz and 64 KHz scanning frequencies in order to choice the optimum negative drive. The test circuit is illustrated in fig. 1. Figure 1: Inductive Load Switching Test Circuit. Inductance L1 serves to control the slope of the negative base current I B2 in order to recombine the excess carriers in the collector when base current is still present, thus avoiding any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC = operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. Figure 2: Switching Waveforms in a Deflection Circuit. 5/7 THD200FI ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 6/7 THD200FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit for the y consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7 |
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