 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 4AK26 Silicon N Channel Power MOS FET Array Application SP-12 High speed power switching Features * Low on-resistance RDS(on) 0.06, VGS = 10V, ID = 5A RDS(on) 0.075, VGS = 4V, ID = 5A * Capable of 4V gate drive * Low drive current * High speed switching * High density mounting * Suitable for motor driver and solenoid driver and lamp driver 1 1,5,8,12 ; Gate 2,4,9,11 ; Drain 3,6,7,10 ; Source 12 9 8 12 2 1 5 4 11 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Ratings 60 20 10 32 10 Unit V V A A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Pch(Tc = 25 C)** 28 Pch** Tch Tstg 4 150 -55 to +150 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 4 Devices operation 4AK26 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.045 10 250 2.0 0.06 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 5A VGS = 10 V * ID = 5 A VGS = 4 V * ID = 5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V RL = 3 ------------------------------------------------ -- 0.056 0.075 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 12 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1400 720 220 15 95 300 170 1.05 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, dIF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 110 -- s -------------------------------------------------------------------------------------- 4AK26 Maximum Channel Dissipation Curve 6 Pch (W) 5 4 3 2 1 Pch (W) Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 20 Channel Dissipation Channel Dissipation 10 0 25 50 75 100 125 150 Ambient Temperature Ta (C) 0 25 50 75 100 125 Case Temperature Tc (C) 150 |
Price & Availability of 4AK26
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |