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| TIP35C TIP36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The TIP35C is a silicon epitaxial-base NPN transistors in TO-218 plastic package. It is intented for use in power amplifier and switching applications. TIP36B is a silicon PNP transistor. The complementary PNP type for TIP35C is TIP36C. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case 25 C o Value TIP35C TIP36B 80 80 5 25 50 5 125 -65 to 150 150 TIP36C 100 100 Unit V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C For PNP types voltage and current values are negative. April 1997 1/4 TIP35C/TIP36B/TIP36C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO I CES Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector Cut-off Current (V BE = 0) Test Conditions V CB = 60 V V EB = 5 V V CE = Rated V CEO I C = 30 mA for TIP36B for TIP35C/36C I C = 1.5 A I C = 15 A I C = 15 A I C = 25 A I C = 15 A I C = 25 A IC = 1 A f = 1 MHz IC = 1 A f = 1 KHz V CE = 4 V V CE = 4 V I B = 1.5 A IB = 5 A V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V 3 25 Min. Typ. Max. 1 1 0.7 Unit mA mA mA VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) h FE * V CE(sat) * V BE(on) * fT hfe DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Small Signal Current Gain 80 100 25 10 50 1.8 4 2 4 V V V V V MHz Pulsed: Pulse duration = 300 s, duty cycle 2 % For PNP types voltage and current values are negative. 2/4 TIP35C/TIP36B/TIP36C TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R O - 4 3.95 31 12.2 4.1 - 0.157 0.5 1.1 10.8 14.7 - 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 - 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H F R 123 P025A G 3/4 TIP35C/TIP36B/TIP36C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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