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| SGSIF461 FAST-SWITCH HOLLOW-EMITTER NPN TRANSISTOR s s s VERY HIGH SWITCHING SPEED NPN TRANSISTOR LOW BASE-DRIVE REQUIREMENTS s APPLICATIONS: SWITCH MODE POWER SUPPLIES DESCRIPTION The SGSIF461 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO VEBO IC I CM IB I BM P tot T stg Tj June 1997 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C Storage Temperature Max. Operating Junction Temperature o Value 850 400 7 15 25 8 15 55 -65 to 150 150 Unit V V V A A A A W o o C C 1/4 SGSIF461 THERMAL DATA ISOWATT218 R thj-case Thermal Resistance Junction-Case Max 2.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 700 V V EC = 380 V V EC = 400 V V BE = 7 V I C = 100 mA I C = 10 A I C = 5.5 A I C = 10 A I C = 5.5 A IB = 2 A I B = 0.8 A IB = 2 A I B = 0.8 A 1 1.4 0.25 1 1 0.15 1 1 0.06 1.4 0.1 2.8 0.2 400 1.5 1.5 1.5 1.5 1.7 2.3 0.5 Min. Typ. Max. 200 200 2 1 Unit A A mA mA V V V V V s s s s s s s s s s s V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) t ON ts tf t ON ts tf t ON ts tf ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on Time Storage Time Fall Time Turn-on Time Storage Time Fall Time Turn-on Time Storage Time Fall Time Storage Time Fall Time RESISTIVE LOAD V CC = 250 v I C = 10 A I B1 = 2 A I B2 = -2I B1 RESISTIVE LOAD V CC = 250 v I C = 10 A I B1 = 2 A I B2 = -2I B1 With Antisaturation Network RESISTIVE LOAD V CC = 250 V I C = 10 A I B1 = 2 A V BE (off) = - 5 V INDUCTIVE LOAD I C = 10 A h FE = 5 V CL = 350 V V BE(off) = -5 V L = 300 H R BE(off) = 1.2 INDUCTIVE LOAD I C = 10 A h FE = 5 V CL = 350 V V BE(off) = -5 V L = 300 H R BE(off) = 1.2 T c = 100 o C ts tf Storage Time Fall Time 4 0.3 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 SGSIF461 ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 D1 C D M U H G 123 L1 L4 P025C 3/4 F SGSIF461 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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