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HB56A240BR Series
2,097,152-word x 40-bit High Density Dynamic RAM Module
ADE-203Rev. 0.0 Dec. 1, 1995
Description
The HB56A240BR is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4-Mbit DRAM (HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A240BR is 72-pin single in-line package. Therefore, the HB56A240BR makes high density mounting possible without surface mount technology. The HB56A240BR provides common data inputs and outputs. Its module board has decoupling capacitors beneath the each SOJ but only on the one side of its module board.
Features
* * * * 72-pin single in-line package -- Lead pitch : 1.27 mm Single 5 V ( 5%) supply High speed -- Access time : 60 ns/70 ns/80 ns (max) Low power dissipation -- Operating: 6.04 W/5.52 W/4.99 W (max) -- Standby: 210 mW (max) 10.5 mW (max) (L-version) Fast page mode capability 1,024 refresh cycle : 16 ms : 128 ms (L-version) 2 variations of refresh -- RAS-only refresh -- CAS-before-RAS refresh TTL compatible
* * *
*
HB56A240BR Series
Ordering Information
Type No. HB56A240BR-6C HB56A240BR-7C HB56A240BR-8C HB56A240BR-6CL HB56A240BR-7CL HB56A240BR-8CL Access Time 60 ns 70 ns 80 ns 60 ns 70 ns 80 ns Package 72-pin SIP socket type Contact pad Gold
Pin Arrangement
1 pin Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Pin Name VSS DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 VCC PD4 A0 A1 A2 A3 A4 A5 A6 Pin No. 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
36 pin 37 pin Pin Name OE DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 A7 DQ16 VCC A8 A9 NC NC DQ17 DQ18 Pin No. 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
72 pin Pin Name DQ19 DQ20 VSS CAS0 NC NC CAS1 RAS0 RAS1 DQ21 WE X40 (V SS ) DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 Pin No. 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Pin Name DQ28 DQ29 DQ30 DQ31 VCC DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 PD0 PD1 PD2 PD3 DQ39 VSS
2
HB56A240BR Series
Pin Description
Pin Name A0-A9 A0-A9 DQ0-DQ39 CAS0, CAS1 RAS0, RAS1 WE OE VCC VSS PD0-PD4 NC Function Address input Refresh address input Data-in/data-out Column address strobe Row address strobe Read/write enable Output enable Power supply (+5 V) Ground Presence detect pin No connection
Presence Detect Pin Arrangement
HB56A240BR Pin No. 67 68 69 70 11 Pin Name PD0 PD1 PD2 PD3 PD4 60 ns NC NC NC NC NC 70 ns NC NC VSS NC NC 80 ns NC NC NC VSS NC
3
HB56A240BR Series
Block Diagram
RAS1 CAS1 RAS0 CAS0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
A0 to A9
I/O CAS RAS I/O D0 I/O I/O I/O CAS RAS I/O D1 I/O I/O I/O CAS RAS I/O D2 I/O I/O I/O CAS RAS I/O D3 I/O I/O I/O CAS RAS I/O D4 I/O I/O I/O CAS RAS I/O D5 I/O I/O I/O CAS RAS I/O D6 I/O I/O I/O CAS RAS I/O D7 I/O I/O I/O CAS RAS I/O D8 I/O I/O I/O CAS RAS I/O D9 I/O I/O
D0 - D19 D0 - D19 D0 - D19 D0 - D19 C0 - C9 D0 - D19
I/O CAS RAS I/O D10 I/O I/O I/O CAS RAS I/O D11 I/O I/O I/O CAS RAS I/O D12 I/O I/O I/O CAS RAS I/O D13 I/O I/O I/O CAS RAS I/O D14 I/O I/O I/O CAS RAS I/O D15 I/O I/O I/O CAS RAS I/O D16 I/O I/O I/O CAS RAS I/O D17 I/O I/O I/O CAS RAS I/O D18 I/O I/O I/O CAS RAS I/O D19 I/O I/O
WE OE VCC VSS
Note: D0 - D19 : HM514400
Absolute Maximum Ratings
Parameter Symbol Value Unit
4
HB56A240BR Series
Voltage on any pin relative to V SS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature VT VCC Iout PT Topr Tstg -1.0 to +7.0 -1.0 to +7.0 50 10 0 to +70 -55 to +125 V V mA W C C
Recommended DC Operating Conditions (Ta = 0 to +70C)
Parameter Supply voltage Input high voltage Input low voltage Note: 1. All voltage referred to VSS . Symbol VCC VIH VIL Min 4.75 2.4 -1.0 Typ 5.0 -- -- Max 5.25 5.5 0.8 Unit V V V Note 1 1 1
5
HB56A240BR Series
DC Characteristics (Ta = 0 to +70C, VCC = 5 V 5%, VSS = 0 V)
HB56A240BR 60 ns Parameter Operating current Standby current Symbol Min I CC1 I CC2 -- -- 70 ns Max Min 1150 -- 40 -- 80 ns Max Min 1050 -- 40 -- Max Unit Test Conditions 950 40 mA mA t RC = min TTL interface RAS, CAS = VIH Dout = High-Z CMOS interface RAS, CAS V CC-0.2V Dout = High-Z CMOS interface RAS, CAS = VIH WE, OE, address, Din = VIH or VIL Dout = High-Z t RC = min RAS = VIH, CAS = VIL Dout = enable t RC = min t PC = min 1, 3 4 Notes 1, 2
--
20
--
20
--
20
mA
Standby current (L-version)
I CC2
--
2
--
2
--
2
mA
RAS-only refresh current Standby current CAS-before-RAS refresh current
I CC3 I CC5 I CC6
-- -- -- -- --
1150 -- 100 --
1050 -- 100 --
950 100 950 950 4
mA mA mA mA mA
2 1
1150 -- 1150 -- 4 --
1050 -- 1050 -- 4 --
Fast page mode current I CC7 Battery backup operation current (CBR refresh) (L-version) Input leakage current I CC10
t RC = 125 s, tRAS 1 s 4 WE = VIH, CAS = VIL OE, address, Din = VIH or V IL, Dout = High-Z 0 V Vin 7 V 0 V Vout 7 V Dout = disable Iout = -5 mA Iout = 4.2 mA
I LI
-10 -10 2.4 0
10 10 VCC 0.4
-10 -10 2.4 0
10 10 VCC 0.4
-10 -10 2.4 0
10 10 VCC 0.4
A A V V
Output leakage current I LO Output high voltage Output low voltage VOH VOL
Notes: 1. I CC depends on output load condition when the device is selected. ICC max is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while CAS = VIH. 4. VCC - 0.2 V V IH 6.5 V, 0 V V IL 0.2 V.
6
HB56A240BR Series
Capacitance (Ta = 25C, VCC = 5 V 5%)
Parameter Input capacitance (Address A0-A9) Input capacitance (WE, OE) Input capacitance (RAS, CAS) Input/Output capacitance (DQ0-DQ39) Symbol CI1 CI2 CI3 CI/O Typ -- -- -- -- Max 140 160 90 25 Unit pF pF pF pF Notes 1 1 1 1, 2
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. CAS = VIH to disable Dout.
AC Characteristics
* Refer to the HM514400C Series data sheet.
Unit: mm/inch
Physical Outline
107.95 4.25 101.19 3.98 3.175 2 - 0.125 R1.57 R0.062 6.35 0.25 44.45 1.75
A
2.03 0.08 6.35 0.25
1.27 R1.57 0.05 R0.062 44.45 1.75
2.54 Min 0.10 10.16 0.40
6.35 0.25
1.04 0.041
1.27 0.05
Detail A 60 ns 70 ns 80 ns
7
3.17 Min 0.125
25.4 1.00
+0.10 -0.08 +0.004 -0.003
7.23 Min 0.285
9.30 Max 0.366

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