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| STB50NE10 N-CHANNEL 100V - 0.021 - 50A D2PAK STripFETTM POWER MOSFET TYPE STB50NE10 s s s s s VDSS 100 V RDS(on) <0.027 ID 50 A s TYPICAL RDS(on) = 0.021 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Value 100 100 20 50 35 200 180 1.2 6 -65 to 175 175 Unit V V V A A A W W/C V/ns C C Tj Max. Operating Junction Temperature (*) Pulse width limited by safe operating area. July 2001 . (1) ISD 50A, di/dt 300A/s, VDD V(BR)DSS, T j TJMAX 1/9 STB50NE10 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.83 62.5 0.5 300 C/W C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 50 300 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 100 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 25 A Min. 2 Typ. 3 0.021 Max. 4 0.027 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS >ID(on)xRDS(on)max ID=25 A Min. 20 Typ. 35 4350 500 175 Max. Unit S VDS = 25V f = 1 MHz VGS = 0 6000 675 238 pF pF pF 2/9 STB50NE10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 25 A VDD = 50 V VGS = 10 V RG = 4.7 (Resistive Load, Figure 3) VDD= 80 V ID= 50 A VGS= 10V Min. Typ. 25 100 123 24 47 Max. 34 135 166 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-Voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 50 A Vclamp = 80 V VGS = 10 V RG = 4.7 (Inductive Load, Figure 5) Min. Typ. 45 35 65 Max. 61 48 88 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 50 A VGS = 0 155 815 10.5 Test Conditions Min. Typ. Max. 50 200 1.5 210 1100 15 Unit A A V ns nC A di/dt = 100A/s ISD = 50 A Tj = 150C VDD = 30 V (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB50NE10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB50NE10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/9 STB50NE10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB50NE10 D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 10 8.5 4.88 15 1.27 1.4 2.4 0.4 8 0 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.016 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 7/9 STB50NE10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082 * on sales type 8/9 STB50NE10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9 |
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