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(R)
X04xxxF
SENSITIVE GATE SCR
FEATURES IT(RMS) = 4A VDRM = 400V to 800V Low IGT < 200A DESCRIPTION The X04xxxF series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required, like small engine ignition, SMPS crowbar protection, food processor. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 10 mA Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 90C Ta= 25C IT(AV) Tc= 90C Ta= 25C ITSM tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl tp = 10 ms Value 4 1.35 2.5 0.9 33 30 4.5 50 - 40, + 150 - 40, + 125 260 A2s A/s C C A A Unit A
K
AG
TO202-3 (Plastic)
Symbol VDRM VRRM
Parameter D Repetitive peak off-state voltage Tj = 125C RGK = 1K 400
Voltage M 600 N 800
Unit V
August 1998 Ed : 1A
1/4
X04xxxF
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 100 7.5 Unit C/W C/W
GATE CHARACTERISTICS PG (AV)= 0.2 W max. PGM = 3 W max. (tp = 20 s) IGM = 1.2 A max. (tp = 20 s) VGD = 0.1Vmin. (VD=VDRM RL=3.3k RGK = 1 K Tj= 125C)
ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25C MIN MAX VGT VRGM IH IL VTM IDRM IRRM dV/dt VD=12V (DC) RL=140 IRG =10A IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 8A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Tj= 110C MAX MIN MAX MAX MAX MAX MAX MIN 10 200 Sensitivity 03 20 200 0.8 8 5 6 1.8 5 200 15 15 V/s 05 20 50 V V mA mA V A A Unit
ORDERING INFORMATION
X
SCR TOP GLASS CURRENT
04
03
SENSITIVITY
M
F
PACKAGE : F=TO202-3 VOLTAGE
2/4
X04xxxF
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase).
P (W)
5
360
O
P (W)
5 4 3
= 120
Tcase (oC) -85
DC
o
4
Rth(j-c)
-95
= 180
o
3 -105 2
Rth(j-a)
2
= 60
o
= 90
o
1
= 30
o
1
I T(AV)(A)
Tamb ( C)
o
-115
0 0
0.5
1
1.5
2
2.5
3
3.5
4
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average on-state current versus case temperature.
I T(AV) (A)
1
Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a) 1.00
0.8
0.6
= 180
o
0.10
0.4
0.2
Tamb ( C)
o
tp(s)
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C]
10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih Igt
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
Ih[Tj] Ih[Tj=25 o C]
35
Tj initial = 25 C
o
30 25 20 15 10 5
Tj(oC)
0 20 40 60 80 100 120 140
Number of cycles
0 1
10
100
1000
3/4
X04xxxF
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
Tj initial = 25oC
100
100
I TSM
Tj initial o 25 C
10
I2 t
10
Tj max
Tj max Vto =0.95V Rt =0.100
tp(ms)
VTM (V)
1 1
10
1 0
0.5
1
1.5
2
2.5
3
3.5
4
PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS
A
C O F P N1 N M D J H
REF. A C D E F H J M N N1 O P
Millimeters Typ. 7.3 10.5 7.4 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 Max. 10.1
Inches Typ. 0.287 0.413 0.290 0.059 0.020 0.059 0.177 0.209 0.100 0.055 0.028 Max. 0.398
Marking : type number Weight : 1 g
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4

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