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| DUAL N-CHANNEL 30V - 0.018 - 7A SO-8 STripFETTM II POWER MOSFET TYPE STS7DNF30L s s STS7DNF30L VDSS 30 V RDS(on) <0.022 ID 7A s TYPICAL RDS(on) = 0.018 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SO-8 APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Single Operation Drain Current (continuos) at TC = 100C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25C Dual operating Total Dissipation at TC = 25C Single operating Value 30 30 16 7 4 28 2 1.6 A Unit V V V ID IDM(*) Ptot A W W 1/6 (*) Pulse width limited by safe operating area. February 2002 . STS7DNF30L THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Maximum Operating Junction Temperature Storage Temperature Single Operating Dual Operating 78 62.5 150 -65 to 150 C/W C/W C C (*) When mounted on FR-4 board with 0.5 in2 pad of Cu. ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 3.5 A ID = 3.5 A Min. 1 Typ. 1.6 0.018 0.021 Max. 2.5 0.022 0.026 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS>ID(on)xRDS(on)max ID=3.5 A Min. Typ. 10 1050 250 85 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/6 STS7DNF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 3.5 A VDD = 15 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 1) VDD= 24 V ID= 8 A VGS= 5 V (see test circuit, Figure 2) Min. Typ. 22 60 17.5 4 7 23 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 3.5 A VDD = 15 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 1) ID = 7 A Vclamp = 24 V RG = 4.7, VGS = 4.5 V (Inductive Load, Figure 3) Min. Typ. 42 10 11 12 25 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A VGS = 0 50 40 1.6 Test Conditions Min. Typ. Max. 8 32 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 7 A VDD = 20 V Tj = 150C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. 3/6 STS7DNF30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 STS7DNF30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 5/6 STS7DNF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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