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U421/423
Monolithic N-Channel JFET Duals
Product Summary
Part Number
U421 U423
VGS(off) (V)
-0.4 to -2 -0.4 to -2
V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Typ (mV)
-40 -40 0.3 0.3 -0.25 -0.25 10 25
Features
D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 0.2 pA Low Noise High CMRR: 102 dB
Benefits
D D D D D D Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals
Applications
D Ultralow Input Current Differential Amps D High-Speed Comparators D Impedance Converters
Description
The U421/423 are monolithic dual n-channel JFETs designed to provide very high input impedance for differential amplification and impedance matching. Among its many unique features, this series offers operating gate current specified at -250 fA. The hermetic TO-78 package is available with full military processing (see Military Information). For similar products see the low-noise U/SST401 series and high-gain 2N5911/5912 data sheets.
TO-78
S1 1 7
G2
D1
2
6
D2
3 G1 4
5 S2
Case, Substrate Top View
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -40 V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70248.
Siliconix P-37514--Rev. B, 25-Jul-94
1
U421/423
Specificationsa
Limits
U421 U423
Parameter Static
Gate-Source Breakdown Voltage Gate-Gate Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current Gate Reverse Current
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Unit
V(BR)GSS V(BR)G1 - G2 VGS(off) IDSS IGSS
IG = -1 mA, VDS = 0 V IG = "1 mA, ID = 0, IS = 0 VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 5 mA TA = 125_C VGS = 0 V, ID = 10 mA VDG = 10 V, ID = 5 mA IG = 1 mA , VDS = 0 V
-60 "55 -1.2 400 -0.6 -0.3 -0.2 -150 2000 -0.8 0.7
-40 "40 -0.4 60 -2 1000 -1 -1 -0.25 -250
-40 "40 -0.4 60 -2 1000 -1 -1 -0.25 -250 W -1.8 -1.8 V mA pA nA pA V
Gate Operating Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage
IG rDS(on) VGS VGS(F)
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs VDS = 10 V VGS = 0 V, f = 1 kHz V V, gos gfs VDS = 10 V ID = 10 mA , f = 1 kHz V, gos Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Crss 0.7 1.5 1.5 nV Hz dB 0.4 1.4 3 3 3 3 pF mS 4 0.2 0.12 10 0.35 0.12 10 0.35 mS mS 0.6 0.3 1.5 0.3 1.5 mS
en NF
VDS = 10 V, ID = 10 mA , f = 10 Hz RG = 10 MW
30
70 1
70 1
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Common Mode Rejection Ratio V GS1 - V GS2 D V GS1 - V GS2 DT CMRR VDG = 10 V, ID = 10 mA VDG = 10 V, ID = 10 mA TA = -55 to 125_C VDG = 10 to 20 V, ID = 10 mA 102 90 10 25 mV mV/_C
10
40
80
dB
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed or subject to production testing.
NNT
2
Siliconix P-37514--Rev. B, 25-Jul-94
U421/423
Typical Characteristics
2 I DSS - Saturation Drain Current (mA)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
1 g fs - Forward Transconductance (mS)
Gate Leakage Current
100 nA 10 nA I G - Gate Leakage 1 nA TA = 125_C 100 pA 100 mA 10 pA 1 pA 0.1 pA 0 10 20 30 40 50 VDG - Drain-Gate Voltage (V) TA = 25_C IGSS @ 25_C 30 mA 30 mA IGSS ID = 100 mA
1.6 gfs 1.2 IDSS 0.8
0.8
0.6
0.4
0.4
IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -1 -2 -3 -4 -5
0.2
0 VGS(off) - Gate-Source Cutoff Voltage (V)
0
Output Characteristics
0.5 VGS(off) = -1 V 0.4 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V -0.1 V 0.3 -0.2 V -0.3 V 0.2 -0.4 V -0.5 V 0.1 -0.6 V -0.7 V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) 0 0 4 0.8 1
Output Characteristics
VGS(off) = -1.5 V
0.6
VGS = 0 V -0.2 V
0.4 -0.4 V 0.2 -1.0 V -0.6 V -0.8 V
8
12
16
20
VDS - Drain-Source Voltage (V)
0.25
Output Characteristics
VGS = 0 V VGS(off) = -1 V -0.1 V
0.5
Output Characteristics
VGS(off) = -1.5 V
0.2 I D - Drain Current (mA) -0.2 V 0.15 -0.3 V 0.1 -0.4 V -0.5 V 0.5 -0.6 V -0.7 V 0 0.2 0.4 0.6 0.8 1 I D - Drain Current (mA)
0.4
VGS = 0 V
0.3
-0.2 V -0.4 V -0.6 V
0.2
0.1
-0.8 V -1.0 V
0 VDS - Drain-Source Voltage (V)
0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V)
Siliconix P-37514--Rev. B, 25-Jul-94
3
U421/423
Typical Characteristics (Cont'd)
Transfer Characteristics
0.5 VGS(off) = -1 V 0.4 I D - Drain Current (mA) TA = -55_C 25_C 0.3 VGS1 - VGS2 10 U421 (mV) VDS = 10 V 100
Gate-Source Differential Voltage vs. Drain Current
VDG = 10 V TA = 25_C U423
0.2
125_C
0.1
0 0 -0.2 -0.4 -0.6 -0.8 -1 VGS - Gate-Source Voltage (V)
1 10 100 ID - Drain Current (mA) 1000
100
Voltage Differential with Temperature vs. Drain Current
VDG = 10 V DTA = 25 to 125_C DTA = -55 to 25_C
130
Common Mode Rejection Ratio vs. Drain Current
DVDG D VGS1 - VGS2
( mV/ _C )
120
CMRR = 20 log
CMRR (dB)
110
DVDG = 10 - 20 V 5 - 10 V
D VGS1 - VGS2
10 Dt
U423
100
U421 90
1 10 100 ID - Drain Current (mA) 1000
80 10 100 ID - Drain Current (mA) 5 rDS(on) - Drain-Source On-Resistance (k W ) 1000
Circuit Voltage Gain vs. Drain Current
100 g fs R L 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V R L + 10 V ID AV +
On-Resistance vs. Drain Current
80 A V - Voltage Gain
4
60
3 VGS(off) = -1 V 2 -1.5 V 1
40
VGS(off) = -1 V -1.5 V
20
0 10 100 ID - Drain Current (mA) 1000
0 0.01 0.1 ID - Drain Current (mA) 1
4
Siliconix P-37514--Rev. B, 25-Jul-94
U421/423
Typical Characteristics (Cont'd)
2
Common-Source Input Capacitance vs. Gate-Source Voltage
1 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz
Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage
f = 1 MHz
C iss - Input Capacitance (pF)
1.6
VDS = 0 V 5V
0.8 VDS = 0 V 0.6 10 V 0.4 5V
1.2 10 V 0.8
0.4
0.2
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 1 g fs - Forward Transconductance ( m S)
0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V)
Output Conductance vs. Drain Current
50 VGS(off) = -1 V VDS = 10 V f = 1 kHz
Equivalent Input Noise Voltage vs. Frequency
VDS = 10 V
0.8 TA = -55_C 0.6 25_C 0.4 125_C 0.2
(nV / Hz)
e n - Noise Voltage
40
30 ID = 30 mA 20
10
ID = 100 mA
0 10 100 ID - Drain Current (mA) 1000
0 10 100 1k f - Frequency (Hz) 10 k 100 k
1 g fs - Forward Transconductance (mS)
Common-Source Forward Transconductance vs. Drain Current
VGS(off) = -1 V rDS(on) - Drain-Source On-Resistance (k W ) VDS = 10 V f = 1 kHz
5
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
rDS @ ID = 10 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
20
0.8 TA = -55_C 0.6 25_C 0.4 125_C 0.2
4
16 g os - Output Conductance ( mS)
3
12 rDS gos 8
2
1
4
0 10
0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V)
0
100 ID - Drain Current (mA)
1000
Siliconix P-37514--Rev. B, 25-Jul-94
5

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