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| U430/431 Matched N-Channel JFET Pairs Product Summary Part Number U430 U431 VGS(off) (V) -1 to -4 -2 to -6 V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Typ (mV) -25 -25 10 10 -15 -15 25 25 Features D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 15 pA Low Noise High CMRR: 75 dB Benefits D D D D D D Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals Applications D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Description The U430/431 are matched JFET pairs assembled in a TO-78 package. These devices offer good power gain even at frequencies beyond 250 MHz. The TO-78 package is available with full military processing (see Military Information). For similar products, see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-78 S1 1 7 S2 G1 2 6 G2 3 D1 4 Case Top View 5 D2 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70249. Siliconix P-37405--Rev. D, 04-Jul-94 1 U430/431 Specificationsa Limits U430 U431 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 5 mA TA = 150_C IG = 10 mA , VDS = 0 V -35 -25 -1 12 -4 30 -150 -150 -25 -2 24 -6 60 -150 -150 V mA pA nA pA nA -5 -10 -15 -10 0.8 Gate Operating Current Gate-Source Forward Voltage 1 1 V Dynamic Common-Source Forward Transconductance c Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 10 V ID = 10 mA , f = 1 kHz V, gos Ciss VGS = -10 V VDS = 0 V f = 1 MHz 10 V, V, Crss en VDS = 10 V, ID = 10 mA f = 100 Hz 2 6 2.5 2.5 nV Hz 100 4.5 250 5 250 5 pF mS 15 10 10 mS High Frequency Common-Source Forward Transconductance Common-Source Output Conductance Power-Match Source Admittance gfs gos gig VDS = 10 V, ID = 10 mA f = 100 MHz 14 0.13 12 mS Matching Differential Gate-Source Voltage Saturation Drain Current Ratiod Transconductance Ratiod Gate-Source Cutoff Voltage Ratiod Differential Gate Current Common Mode Rejection Ratio |VGS1 VGS2| I DSS1 I DSS2 gfs1 gfs2 VDG = 10 V, ID = 10 mA VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 10 mA, f = 1 kHz VDS = 10 V, ID = 1 nA VDG = 10 V, ID = 5 mA VDG = 5 to 10 V, ID = 10 mA 25 0.95 0.95 0.95 -2 75 0.9 0.9 0.9 1 1 1 0.9 0.9 0.9 1 1 1 pA dB NZBD mV VGS(off)1 VGS(off)2 |I G1 I G2| CMRR Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. Assumes smaller value in the numerator. 2 Siliconix P-37405--Rev. D, 04-Jul-94 U430/431 Typical Characteristics 100 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 50 gfs - Forward Transconductance (mS) Gate Leakage Current 10 nA TA = 125_C IG @ ID = 10 mA 200 mA 80 40 1 nA I G - Gate Leakage 60 gfs 40 IDSS 30 100 pA IGSS @ 125_C 200 mA 20 10 pA 10 mA TA = 25_C 1 pA IGSS @ 25_C 20 10 0 0 -2 -3 -4 VGS(off) - Gate-Source Cutoff Voltage (V) -1 -5 0 0.1 pA 0 3 4 9 12 VDG - Drain-Gate Voltage (V) 15 100 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 300 g fs - Forward Transconductance (mS) 20 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz g os - Output Conductance ( mS) 80 240 16 TA = -55_C 12 25_C 8 125_C 60 180 40 rDS 20 gos 120 60 4 0 0 -3 -4 -2 VGS(off) - Gate-Source Cutoff Voltage (V) -1 -5 0 0 0.1 1 ID - Drain Current (mA) 10 Transconductance vs. Gate-Source Voltage 30 VGS(off) = -1.5 V g fs - Forward Transconductance (mS) 24 TA = -55_C 25_C 18 125_C 12 g fs - Forward Transconductance (mS) VDS = 10 V f = 1 kHz 50 Transconductance vs. Gate-Source Voltage VGS(off) = -3 V 40 TA = -55_C 30 25_C 20 125_C 10 VDS = 10 V f = 1 kHz 6 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) Siliconix P-37405--Rev. D, 04-Jul-94 3 U430/431 Typical Characteristics (Cont'd) Output Characteristics 20 VGS(off) = -1.5 V 16 I D - Drain Current (mA) VGS = 0 V I D - Drain Current (mA) -0.2 V 40 -0.4 V 30 -0.8 V -1.2 V -1.6 V 10 -2.0 V -2.4 V 0 2 4 6 8 10 50 VGS(off) = -3 V VGS = 0 V Output Characteristics 12 -0.4 V 8 -0.6 V -0.8 V 20 4 0 0 2 4 6 8 VDS - Drain-Source Voltage (V) -1.0 V 10 0 VDS - Drain-Source Voltage (V) Output Characteristics 15 VGS(off) = -1.5 V 12 I D - Drain Current (mA) -0.2 V 9 -0.4 V 6 -0.6 V 3 -0.8 V -1.0 V 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 0 0 0.2 I D - Drain Current (mA) VGS = 0 V 24 30 Output Characteristics VGS(off) = -3 V VGS = 0 V 18 -0.4 V -0.8 V -1.2 V -1.6 V 12 6 -2.0 V -2.4 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 30 Transfer Characteristics VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 100 Transfer Characteristics VGS(off) = -3 V VDS = 10 V f = 1 kHz 24 I D - Drain Current (mA) I D - Drain Current (mA) 80 18 TA = -55_C 25_C 60 TA = -55_C 25_C 12 40 6 125_C 20 125_C 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) 4 Siliconix P-37405--Rev. D, 04-Jul-94 U430/431 Typical Characteristics (Cont'd) 100 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current TA = 25_C 100 Circuit Voltage Gain vs. Drain Current AV + g fs R L 1 ) R Lg os 80 VGS(off) = -1.5 V A V - Voltage Gain 80 60 60 Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 40 -3 V 20 40 VGS(off) = -1.5 V 20 -3 V 0 1 10 ID - Drain Current (mA) 100 0 0.1 1 ID - Drain Current (mA) 10 15 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 12 8 9 VDS = 0 V 6 VDS = 0 V 4 6 3 5V 2 5V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 100 Input Admittance vs. Frequency 100 VDG = 10 V ID = 10 mA Common-Gate Forward Admittance vs. Frequency VDG = 10 V ID = 10 mA Common-Gate 10 gig -gfg 10 (mS) big 1 (mS) bfg 1 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) Siliconix P-37405--Rev. D, 04-Jul-94 5 U430/431 Typical Characteristics (Cont'd) 10 Reverse Admittance vs. Frequency 100 VDG = 10 V ID = 10 mA Common-Gate Output Admittance vs. Frequency VDG = 10 V ID = 10 mA Common-Gate bog 10 (mS) 1 (mS) -brg +grg 0.1 -grg gog 1 0.01 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 150 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz (nV / Hz) g os - Output Conductance ( mS) 16 ID = 1 mA 120 12 90 e n - Noise Voltage TA = -55_C 8 60 25_C 30 125_C 0 4 ID = 10 mA 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 6 Siliconix P-37405--Rev. D, 04-Jul-94 |
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