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| MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice. MGF7170AC UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi GND Vd1 Ext Vg GND Po / Vd2 FEATURES -Low voltage operation : Vd=3.0V -High output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High efficiency : Id=520mA typ. @Po=28dBm -Small size : 7.0 x 6.1 x 1.1 mm Single voltage operation (NVG include) Surface mount package 2 Stage Amplifier External matching circuit is required GND APPLICATION 1.9GHz band handheld phone Pi : RF input Po : RF output Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg : Gate bias(positive bias) GND : Connect to GND Ext : Connect to Capacitor CASE : Connect to GND QUALITY GRADE GG ES1:different pin configuration Block Diagram of this IC and Application Circuit Example. Regulator Battery VDD2 VDD1 VD1 VSS Negative voltage generator Pout VD2 Matching circuit Matching circuit HPA Pin MGF7170AC *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C ) Symbol Vd1,Vd2 Vg Pi Tc(op) Tstg Parameter Drain supply voltage Gate supply voltage Input power Operating case temperature Storage temperature Ratings 6 4 15 -30 ~ +85 -30 ~ +100 Unit V V dBm deg.C deg.C *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25 Symbol f Parameter frequency deg.C ) Limits MIN TYP MAX 1715 Unit Test conditions - 450 480 1780 MHz ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V - - - - - - - - - - - - - - - -30 3 mA Idt Total drain current ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V 520 450 Idle_Id Pout Ig 2sp rin Idle current Output power Gate current 2nd harmonics input VSWR Damage with-standing Note Stability Note Vg=2.6V, Po=28dBm Vg=2.9V, Po=12dBm 150 50 28 10 mA dBm mA dBc Vd1=Vd2=3.0V,Vg=2.6V, Pin=7dBm CDMA modulated signal based on IS-95 STD. (1.2288Mbps spreading,OQPSK) - - - - - - - Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=10, All phase Time=10 sec Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=3:1, All phase No damage - No oscillation Spurious level -60dBc *CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection MITSUBISHI ELECTRIC (2/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Pin vs. Pout,Id for CDMA 35 30 25 Pout 20 MGF7170AC UHF BAND GaAs POWER AMPLIFIER 1400 1200 1000 Idt 800 Id2 600 400 Id1 200 0 -8 -4 0 4 8 12 16 Pin (dBm) 15 10 5 0 -12 Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pin vs. Pout,Efficiency for CDMA 35 30 25 20 15 10 5 0 -12 Pout 70 60 50 40 30 20 10 Fin=1750MHz 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Efficiency MITSUBISHI ELECTRIC (3/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Pin vs.Pout,Gain for CDMA 35 30 25 Gain 20 15 10 5 0 -12 20 15 10 5 0 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pout 35 30 25 Pin vs. Pout,ACPR for CDMA 35 30 25 20 -15 15 10 5 0 -12 -25 ACPR -35 -45 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pout -5 15 5 MITSUBISHI ELECTRIC (4/16) Aug '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Spectral Plot of CDMA ACPR=-30.57dBc Harmonics 2SP=-39.77dBc 3SP=-32.20dBc Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V Pout=28dBm CDMA evaluation Aug. '97 MITSUBISHI ELECTRIC (5/16) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Vd dependence of Pin vs.Pout,Idt 35 30 25 20 15 10 5 0 -12 Idt Pout 1400 1200 1000 800 600 400 200 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Vd dependence of Pin vs.Pout,Efficiency 35 30 25 20 15 10 5 0 -12 Efficiency Pout 70 60 50 40 30 20 10 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation MITSUBISHI ELECTRIC (6/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Vd dependence of Pin vs.Pout,Gain 35 30 25 20 15 10 5 0 -12 Gain Pout 35 30 25 20 15 10 5 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation Vd dependence of Pin vs.Pout,ACPR 35 30 Pout 25 20 -15 15 10 5 0 -12 ACPR -25 -35 -45 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation 15 5 -5 MITSUBISHI ELECTRIC (7/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Vd dependence of Fin vs. Gain,Idt 30 Idt 25 MGF7170AC UHF BAND GaAs POWER AMPLIFIER 600 400 20 Gain 200 Vd=2.6V Vd=3.0V Vd=3.4V 15 1.710 1.730 1.750 1.770 Frequency (GHz) 0 1.790 Fin=1750MHz Vg=2.6V CDMA evaluation Vd dependence of Fin vs. Id1,Id2 150 600 Id2 100 400 50 Id1 200 Vd=2.6V Vd=3.0V Vd=3.4V 0 1.71 1.73 1.75 1.77 Frequency (GHz) 0 1.79 Fin=1750MHz Vg=2.6V CDMA evaluation MITSUBISHI ELECTRIC (8/16) Aug. '97 Preliminary information MITSUBISHI SEMICONDUCTOR MGF7170AC UHF BAND GaAs POWER AMPLIFIER Vd dependence of Fin vs. Gain,Efficiency 35 Efficiency 50 30 40 25 30 Vd=2.6V Vd=3.0V Vd=3.4V Gain 20 1.710 1.730 1.750 1.770 Frequency (GHz) 20 1.790 Fin=1750MHz Vg=2.6V CDMA evaluation Vd dependence of Fin vs. Gain,ACPR 25 -10 20 Gain -20 15 ACPR -30 Vd=2.6V Vd=3.0V Vd=3.4V 10 1.71 1.73 1.75 1.77 Frequency (GHz) -40 1.79 Fin=1750MHz Vg=2.6V CDMA evaluation MITSUBISHI ELECTRIC (9/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for CDMA(1.715-1.78GHz): ES1 l=5.5 w=1.0 Pin l=11.0 w=1.0 2.0pF l=2.0 w=1.0 2.5pF MGF 7170 AC Vd2 l=13.5 w=0.5 l=2.0 w=2.2 1000pF 8.0pF Pout l=11.0 w=1.0 5.0pF Unit:mm SUB. data Er=4.8 H=600 um Metal T=43 um MITSUBISHI ELECTRIC (10/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Test Circuit Board for CDMA(1.715-1.78GHz): ES1 2.5pF 2.0pF Pin 18K Ohm 1000pF 1000pF 10Ohm 1000pF 45K Ohm 1000pF 5.0pF Pout 8.0pF Vd1 10Ohm 1000pF Vg Vd2 40 x 60 mm SUB. data ER=4.8 H=600um Metal T=43um MITSUBISHI ELECTRIC (11/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Vg Pin FET1 Matching circuits FET2 Pout VD1 VD2 ZI(TS) ZL(TS) Equivalent circuit of MGF7170AC with our test board : MGF7170AC(Ceramic package) : our test board( Er=4.8, t=0.6mm) MITSUBISHI ELECTRIC (12/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance (@1.715-1.78GHz) : ES1 ZI(ES1) = 8.7 - j18.3 () f=1.715GHz 8.6 - j16.5 () f=1.75GHz 8.5 - j15.0 () f=1.78GHz ZL(ES1) = 3.8 - j1.1 () f=1.715GHz 3.5 - j0.4 () f=1.75GHz 3.3 + j 0.2() f=1.78GHz X 1.78GHz X 1.75GHz X 1.715GHz Conditions; Vd1=Vd2=3.0V Vg=2.6V Pout=28dBm MITSUBISHI ELECTRIC (13/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information OUTLINE DRAWING Note1 MGF7170AC UHF BAND GaAs POWER AMPLIFIER Unit : mm 6.1+/-0.2 5.2 0.3 1 8 2 3 4 6 5 7 4 - R0.2 0.3 2 - (2.4) 8 - (0.5) 8 - (0.4) Terminal Connection 1 2 3 RF IN (Pi) GND 4.1 2 - (0.1) 8 - (4.9) Vd1 4 Ext 5 Vg 6 RF OUT (Po) & Vd2 7 GND 8 GND Case:GND Note1 : 1 pin mark Note2 : The values without tolerance are typical. MITSUBISHI ELECTRIC (14/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad 2.50 4.10 0.8 4.90 0.8 Unit:mm MITSUBISHI ELECTRIC (15/16) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7170AC UHF BAND GaAs POWER AMPLIFIER Recommended Temperature Profile 1) Infrared Reflow and Air Reflow Temperature Profile max. 10sec max. 240 deg.C 1~4 deg.C/sec 1~4 deg.C/sec 150 deg.C Approx. 60sec Time Notes 1) Temperature profile on package surface 2) Reflow process : Up to three times MITSUBISHI ELECTRIC (16/16) Aug. '97 |
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