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| SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs * GOLD METALLIZATION * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz * THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES M177 epoxy sealed DESCRIPTION The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up 150 MHz. It's special low thermal resistance package, makes it ideal for ISM applications where reliability and ruggedness are critical factors. ORDER CODE SD2933 BRANDING SD2933 PIN CONNECTION 4 1 5 3 1. Drain 2. Source 3. Gate 2 4. Source 5. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Drain Source Voltage Drain-Gate Voltage (RGS = 1M) Gate-Source Volatge Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Parameter Value 125 125 20 40 648 200 -65 to +150 Unit V V V A W C C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.27 C/W January, 9 2003 1/8 SD2933 ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 200 mA VDS = 50 V VDS = 0 V ID = 250 mA ID = 20 A ID = 10 A VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 10 1000 372 29 1.5 Min. 125 10 10 4 3 Typ. Max. Unit V mA A V V mho pF pF pF REF. 7170198G GFS sorts for each unit DYNAMIC Symbol POUT GPS D Load Mismatch VDD = 50 V VDD = 50 V VDD = 50 V Test Conditions IDQ = 250 mA IDQ = 250 mA POUT = 300 W IDQ = 250 mA POUT = 300 W f = 30 MHz f = 30 MHz f = 30 MHz f = 30 MHz Min. 300 20 50 3:1 Typ. 400 23.5 65 Max. Unit W dB % VSWR VDD = 50 V IDQ = 250 mA POUT = 300 W All Phase Angles IMPEDANCE DATA D FREQ 30 MHz ZDL ZIN () 1.8 - j 0.2 1.9 + j 0.2 1.9 + j 0.3 ZDL () 2.8 + j 2.3 1.6 + j 1.4 1.5 + j 1.6 108 MHz Typical Drain Load Impedance Typical Input Impedance G 175 MHz GFS SORTS Zin A B S 10 / 10.99 11 / 11.99 12 / 12.99 13 / 13.99 E F G H 14 / 14.99 15 / 15.99 16 / 16.99 17 / 18 C D 2/8 SD2933 TYPICAL PERFORMANCE Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage 10000 15 f= 1 MHz Id, Drain Current (A) Capacitance (pF) Ciss 1000 Vdd=10V 10 Tc = + 80oC Tc = + 25oC Coss 100 5 Crss Tc = - 20oC 0 10 0 10 20 30 40 50 1 1.5 2 2.5 3 3.5 4 Vgs, Gate-Source Voltage (V) Vds, Drain Source Voltage (V) Gate-Source Voltage vs. Case Temperature Maximum Thermal Resistance vs. Case Temperature Vgs, GATE-SOURCE VOLTAGE (NORMALIZED) 1.15 0.33 1.1 1.05 1 0.95 0.9 Id= 12 A Id= 10 A 0.32 RTH(j-c) (C/W) Id= 7 A Id= 15 A Id= 5 A 0.31 0.3 0.29 0.28 0.27 0.26 Id=.1 A Id= 4 A Vdd= 10 V Id= 3 A Id= 2 A Id= 1 A Id=.25 A 0.85 0.8 -25 0 25 50 25 100 30 35 40 45 50 55 60 65 70 75 80 85 Tc, CASE TEMPERATURE (C) 75 Tc, CASE TEMPERATURE (C) 3/8 SD2933 TYPICAL PERFORMANCE Output Power vs. Input Power Output Power vs. Input Power 500 500 Pout, Output Power (W) Pout, Output Power (W) 400 Vdd= 50 V Tc= 25C 400 Tc= -20C 300 Vdd= 40 V 300 Tc= 80C 200 200 100 f= 30 MHz Idq=250mA 100 f= 30 MHz Idq= 250 mA Vdd= 50 V 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Pin, Input Power ( W ) Pin, Input Power (W) Power Gain vs. Output Power Efficiency vs. Output Power 26 80 25 24 70 Efficiency (%) 60 50 40 30 20 0 400 Power Gain (dB) 23 22 21 20 19 18 0 100 200 300 f= 30 MHz Idq= 250 mA Vdd= 50 V f=30MHz Vdd=50V Idq=250mA 100 200 300 400 Pout, Output Power (W) Pout, Output Power (W) Output Power vs. Supply Voltage Output Power vs. Gate Voltage 450 400 500 Pout, Output Power (W) 350 300 250 200 150 100 24 Pin = 2.6 W Pin = 1.3 W Pout, OUTPUT POWER (W) f = 30 MHz Idq = 250 mA 400 F= 30 MHz Vdd= 50 V Idq= 250 mA Pin= constant Tc= -20C Tc= +25C 300 Tc= +80C 200 Pin = 0.65 W 100 26 28 30 32 34 36 38 40 42 44 46 48 50 0 -3 -2 -1 0 1 2 3 Vdd, Supply Voltage (V) Vgs, GATE-SOURCE VOLTAGE (V) 4/8 SD2933 30 MHz Test Circuit Schematic NOTES: 1. DIMENSION AT COMPONENT SYMBOL ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINES ARE 0.056[1.42] TYP 3. TRANSMISSION LINE ARE NOT 1:1 SCALE 4. INPUT AND OUTPUT TRANSMISSION LINE ARE 50 OHMS SC14300 REF. 1008706A 30 MHz Test Circuit Component Part List C1,C9 C2, C3 C4 C5,C10,C11,C14,C16 C6 C7 C8 C12 C13 C15 R1,R3 R2 T1 T2 L1 L2 RFC1,RFC2 FB1 FB2 PCB 0.01 F / 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR 750 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10000 pF ATC 200B SURFACE MOUNT CERAMIC CHIP CAPACITOR 510 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 300 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 175-680 pF TYPE 46 STANDARD TRIMMER CAPACITOR 47 F / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 1200 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 F / 63 V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 1 K OHM 1 W SURFACE MOUNT CHIP RESISTOR 560 OHM 2 W WIRE-WOUND AXILS LEAD RESISTOR HF 2-30 MHz SURFACE MOUNT 9:1 TRANSFORMER RG - 142B/U 50 OHM COAXIAL CABLE OD = 0.165[4.18] L 15"[381.00] COVERED WITH 15"[381.00] TINNED COPPER TUBULAR BRAND 13/65" [5.1] WIDTH 1 3/4 TURN AIR-WOUND 16 AWG ID = 0.219 [5.56] POLY-COATED MAGNET WIRE 1 3/4 TURN AIR-WOUND 12 AWG ID = 0.250 [6.34] BUS BAR WIRE 3 TURNS 14 AWG WIRE THROUGH FAIR RITE TOROID SURFACE MOUNT EMI SHIELD BEAD TOROID ULTRALAM 2000. 0.030" THK, r = 2.55, 2 Oz ED CU BOTH SIDES 5/8 SD2933 30 MHz Test Circuit Photomaster 6.4 inches 30 MHz Test Circuit 6/8 4 inches SD2933 M177 (.550 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 5.97 6.96 22.10 28.96 14.10 0.18 2.74 4.32 7.11 27.43 15.88 28.45 16.13 1.080 0.625 MIN. 0.225 0.265 0.860 1.130 0.545 0.003 0.098 0.150 TYP. MAX 0.235 0.275 0.870 1.140 0.555 0.007 0.108 0.170 0.280 1.120 0.635 DIM. A B C D E F G H I J K MIN. 5.72 6.73 21.84 28.70 13.84 0.08 2.49 3.81 TYP. Controlling Dimension: Inches 1011012D 7/8 SD2933 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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