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| STW14NM50 N-CHANNEL 500V - 0.32 - 14A TO-247 MDmeshTMPower MOSFET PRELIMINARY DATA TYPE STW14NM50 s s s s VDSS 500V RDS(on) < 0.35 ID 14 A s s TYPICAL RDS(on) = 0.32 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS 3 2 1 TO-247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprierati strip technique yields overall dynamic performance that is significantly better than that of similar completition's products. APPLICATIONS The MDmeshTM family is very suitablr for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) INTERNAL SCHEMATIC DIAGRAM Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 30 14 8.8 56 175 1.28 6 -65 to 150 150 (1)ISD 12A, di/dt 100A/s, V DD V(BR)DSS, Tj T JMAX. Unit V V V A A A W W/C V/ns C C PTOT dv/dt Tstg Tj (*)Pulse width limited by safe operating area (*)Limited only by maximum temperature allowed August 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/5 STW14NM50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.715 30 300 C/W C/W C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 12 400 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V Min. 500 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 6A Min. 3 Typ. 4 0.3 Max. 5 0.35 Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (1) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance VGS = 0V, VDS = 0V to 400V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 6A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.2 1000 180 25 90 Max. Unit S pF pF pF pF RG 1.6 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2/5 STW14NM50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 12 A, VGS = 10 V Test Conditions VDD = 250 V, ID = 6 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) Min. Typ. 20 10 28 8 15 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400 V, ID = 12 A, RG = 4.7, VGS = 10 V (see test circuit, Figure 5) Min. Typ. 19 8 18 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. Max. 12 48 Unit A A V ns C A ns C A ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/s, VDD = 100 V, Tj = 25C (see test circuit, Figure 5) ISD = 12 A, di/dt = 100 A/s, VDD = 100 V, Tj = 150C (see test circuit, Figure 5) 270 2.23 16.5 340 3 18 1.5 trr Qrr IRRM trr Qrr IRRM Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/5 STW14NM50 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 4/5 STW14NM50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 5/5 |
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