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| (R) DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL IF(AV) VRRM trr (max) VF (max) 3A 600 V 50 ns 1.4 V DAMPER 6A 1500 V 125 ns 1.7 V 1 2 3 1 2 3 FEATURES AND BENEFITS s s s s s Insulated TO-220AB (Bending option F5 available) s s s Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2500 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer. ABSOLUTE RATINGS (limiting values, per diode) Value Symbol VRRM IFSM Tstg Tj Parameter MODUL DAMPER Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal 600 35 1500 80 V A C Unit - 40 to + 150 150 July 2001 - Ed: 6A 1/9 DMV1500H THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Damper junction to case Modulation junction to case Parameter Value 3.6 6 Unit C/W STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Value Symbol Parameter Test conditions Tj = 25C Typ. VF * IR ** Pulse test : Tj = 125C Typ. 1.25 100 Max. 1.7 1000 Unit Max. 2.3 100 Forward voltage drop Reverse leakage current * tp = 380 s, < 2% **tp = 5 ms, < 2% IF = 6 A VR = 1500V 1.5 V A To evaluate the maximum conduction losses of the DAMPER diode use the following equations : 2 P = 1.35 x IF(AV) + 0.059 x IF (RMS) STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Value Symbol VF * IR ** Pulse test : Parameter Forward voltage drop Reverse leakage current * tp = 380 s, < 2% ** tp = 5 ms, < 2% Test conditions IF = 3A VR = 600V Tj = 25C Typ. Max. 1.8 20 Tj = 125C Typ. 1.1 3 Max. 1.4 50 Unit V A To evaluate the maximum conduction losses of the MODULATION diode use the following equations : 2 P = 1.2 x IF(AV) + 0.066 x IF (RMS) RECOVERY CHARACTERISTICS OF THE DAMPER DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 625 Max. Unit ns trr Reverse recovery time Tj = 25C 95 125 ns 2/9 (R) DMV1500H RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 110 Max. 350 Unit ns trr Reverse recovery time Tj = 25C 50 ns TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 6A dIF/dt = 80A/s VFR = 3V IF = 6A dIF/dt = 80A/s Tj = 100C Value Typ. 350 Max. Unit ns VFP Peak forward voltage Tj = 100C 18 25 V TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 3A dIF/dt = 80A/s VFR = 2V IF = 3A dIF/dt = 80A/s Tj = 100C Value Typ. Max. 240 Unit ns VFP Peak forward voltage Tj = 100C 8 V (R) 3/9 DMV1500H Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, = 0.45) (damper diode). PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, = 0.45) (modulation diode). PF(av)(W) Ip(A) 0 1 2 3 4 5 6 Ip(A) 0 1 2 3 4 5 6 Fig. 2-1: Average forward current versus ambient temperature (damper diode). IF(av)(A) 8 7 Rth(j-a)=Rth(j-c) Fig. 2-2: Average forward current versus ambient temperature (modulation diode). IF(av)(A) 4.0 3.5 Rth(j-a)=Rth(j-c) 6 5 4 3 2 1 0 0 =tp/T T 3.0 2.5 2.0 1.5 1.0 tp T Tamb(C) 50 75 100 125 150 0.5 0.0 0 =tp/T tp Tamb(C) 50 75 100 125 150 25 25 Fig. 3-1: Forward voltage drop versus forward current (damper diode). Fig. 3-2: Forward voltage drop versus forward current (modulation diode). IFM(A) 15.0 Typical Tj=125C IFM(A) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 Typical Tj=125C 10.0 Maximum Tj=125C Maximum Tj=25C Maximum Tj=125C Maximum Tj=25C 5.0 VFM(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 VFM(V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 4/9 (R) DMV1500H Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode). K=[Zth(j-c)/Rth(j-c)] 1.0 = 0.5 IM(A) 40 35 30 25 20 15 T Tc=100C 0.5 = 0.2 = 0.1 0.2 Single pulse 10 tp IM t tp(s) 0.1 1E-3 1E-2 1E-1 =tp/T 5 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 1E+0 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode). Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode). IM(A) 30 25 20 15 10 IM Qrr(nc) Tc=100C 1200 1000 800 600 400 IF= 6A 90% confidence Tj=125C 5 0 1E-3 t =0.5 t(s) 1E-2 1E-1 1E+0 200 dIF/dt(A/s) 0 0.1 0.2 0.5 1.0 2.0 5.0 Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode). Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode). Qrr(nC) 200 IF= 3A 90% confidence Tj=125C IRM(A) 2.4 IF= 6A 2.2 90% confidence Tj=125C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 0.2 150 100 50 dIF/dt(A/s) 0 0.1 1.0 10.0 100.0 dIF/dt(A/s) 0.5 1.0 2.0 5.0 (R) 5/9 DMV1500H Fig. 7-2: Reverse recovery current versus dIF/dt (modulation diode). Fig. 8-1: Transient peak forward voltage versus dIF/dt (damper diode). IRM(A) 6 5 4 3 2 1 dIF/dt(A/s) 0 1 10 100 200 IF= 3A 90% confidence Tj=125C VFP(V) 40 35 30 25 20 15 10 5 0 0 20 40 dIF/dt(A/s) 60 80 100 120 140 IF= 6A 90% confidence Tj=125C Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode). Fig. 9-1: Forward recovery time versus dIF/dt (damper diode). VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0 IF= 3A 90% confidence Tj=125C tfr(ns) 800 750 700 650 600 550 500 450 400 350 300 IF= 6A 90% confidence Tj=125C VFR=3V dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/s) 0 20 40 60 80 100 120 140 Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode). Fig. 10: Dynamic parameters versus junction temperature (damper & modulation diodes). tfr(ns) 200 175 150 125 100 75 50 25 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 IF= 3A 90% confidence Tj=125C Vfr=2V VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125C] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Qrr VFP IRM Tj(C) 20 40 60 80 100 120 140 6/9 (R) DMV1500H Fig. 11: Junction capacitance versus reverse voltage applied (typical values) (damper & modulation diodes). C(pF) 100 Tj=25C F=1MHz 10 Modulation VR(V) 1 1 10 100 200 ORDERING INFORMATION DMV1500H / F5 LEAD BENDING (OPTION) DAMPER AND MODULA TION DIODES FORVIDEO (R) 7/9 DMV1500H PACKAGE MECHANICAL DATA TO-220AB F5 OPTION DIMENSIONS REF. A B b2 Millimeters Min. 15.20 24.16 1.65 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 15.80 2.92 Max. 15.90 26.90 2.41 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 2.95 1.70 1.70 16.80 3.30 Inches Min. 0.598 0.951 0.064 0.393 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.104 0.044 0.044 0.622 0.114 Max. 0.625 1.059 0.094 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.661 0.129 a1 C a3 B b1 b2 C c1 c2 c2 R2 a3 R1 L F OI A l4 a1 e F I L l3 l2 c2 b1 e M1 c1 I2 l3 l4 M1 R1 R2 16.40 typ. 1.40 typ. 1.40 typ. 0.645 typ. 0.055 typ. 0.055 typ. PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT s s s Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. 1mm 3.1mm 2.2mm 2.54mm 8/9 (R) DMV1500H PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. B C Millimeters Min. Typ. Max. Min. 15.90 0.598 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.20 Inches Typ. Max. 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 b2 A L F I A a1 a2 B b1 b2 C c1 l4 a1 c2 c2 e F I I4 L c1 l3 l2 a2 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M l2 l3 M s s s Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Type DMV1500H DMV1500HF5 s Marking DMV1500H Package TO-220AB Weight 2.2 g. Base qty 50 Delivery mode Tube Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com (R) 9/9 |
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