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| ALR100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR100 is Designed for 1200 - 1400 MHz, L-Band Applications. PACKAGE STYLE .400 2L FLG N L J A B E D K O FEATURES: * Internal Input/Output Matching Network * PG = 6.0 dB at 100 W/1400 MHz * OmnigoldTM Metalization System F H C M G P I O.120 .062 x 45 Q R D IM A B M IN IM UM in ch e s / m m M A XIM U M in ch e s / m m .140 / 3.56 .110 / 2.80 .110 / 2.80 .395 / 10.03 .193 / 4.90 .230 / 5.84 .003 / 0.08 .118 / 3.00 .063 / 1.60 .650 / 16.51 .386 / 9.80 .900 / 22.86 .450 / 11.43 .125 / 3.18 .050 / 1.27 .405 / 10.29 .170 / 4.32 .062 / 1.58 .006 / 0.15 .131 / 3.33 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC 13.5 A 32 V 270 W @ TC = 25 C -65 C to +250 C -65 C to +200 C 0.55 C/W O C D E F G H I J K L M N O P Q R ORDER CODE: ASI10514 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE PG C IC = 50 mA TC = 25 C NONETEST CONDITIONS IC = 100 mA IE = 10 mA VCE = 32 V VCE = 5.0 V VCC = 28 V IC = 5.0 A POUT = 100 W f = 1.2 to 1.4 GHz MINIMUM TYPICAL MAXIMUM 65 65 3.5 20 15 6.0 50 --- UNITS V V V mA --dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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