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| DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification PNP 5 GHz wideband transistor FEATURES * High output voltage capability * High gain bandwidth product * Good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope. It is intended for wideband amplifier applications. NPN complement is the BFG97. 1 2 3 4 PINNING PIN base emitter collector DESCRIPTION emitter page BFG31 4 1 Top view 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM Vo PARAMETER collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Ts = 135 C ; note 1 IC = -70 mA; VCE = -10 V; Tamb = 25 C IC = -70 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -70 mA; VCE = -10 V; f = 800 MHz; Tamb = 25 C IC = -100 mA; VCE = -10 V; RL = 75 ; Tamb = 25 C open base CONDITIONS - - - 25 - - - MIN. - - - - 5.0 12 600 TYP. MAX. -15 -100 1 - - - - GHz dB mV UNIT V mA W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 135 C; note 1 open emitter open base open collector CONDITIONS - - - - - -65 - MIN. MAX. -20 -15 -3 -100 1 150 175 UNIT V V V mA W C C 1995 Sep 12 2 Philips Semiconductors Product specification PNP 5 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Ccb Ceb Cre fT GUM PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain collector-base capacitance emitter-base capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS open emitter; IC = -10 mA open base; IC = -10 mA open collector; IE = -0.1 mA IE = 0; VCB = -10 V IC = -70 mA; VCE = -10 V; Tamb = 25 C IC = 0; VCB = -10 V; f = 1 MHz; IC = 0; VEB = -10 V; f = 1 MHz IC = 0; VCE = -10 V; f = 1 MHz; Tamb = 25 C IC = -70 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -70 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -70 mA; VCE = -10 V; f = 800 MHz; Tamb = 25 C Vo Vo Notes output voltage output voltage note 2 note 3 MIN. -20 -18 -3 - 25 - - - - - - - - TYP. - - - - - 1.8 5 1.6 5 16 12 600 550 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 135 C; note 1 BFG31 THERMAL RESISTANCE 40 K/W MAX. - - - -1 - - - - - - - - - UNIT V V V A pF pF pF GHz dB dB mV mV s 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. dim = -60 dB; IC = -70 mA; VCE = -10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 850.25 MHz; Vq = Vo -6 dB; fq = 858.25 MHz; Vr = Vo -6 dB;fr = 860.25 MHz; measured at f(p+q-r) = 848.25 MHz. 3. dim = -60 dB (DIN 45004B); IC = -70 mA; VCE = -10 V; RL = 75 ; Tamb = 25 C; Vp = Vo = at dim = -60 dB; fp = 445.25 MHz; Vq = Vo -6 dB; fq = 453.25 MHz; Vr = Vo -6 dB; fr = 455.25 MHz; measured at f(p+q-r) = 443.25 MHz. 1995 Sep 12 3 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 MBB344 MBB345 handbook, halfpage P 1.2 tot (W) handbook, halfpage 80 1.0 h FE 60 0.8 0.6 40 0.4 20 0.2 0 0 50 100 150 200 T s ( o C) 0 0 100 I C (mA) 200 VCE = -10 V; Tamb = 25 C. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current. MBB346 handbook, halfpage 6 handbook, halfpage 8 MBB347 C re (pF) fT (GHz) 5 6 4 4 3 2 2 1 0 10 20 VCE (V) 30 0 0 50 I C (mA) 100 f = 1 MHz; Tamb = 25 C VCE = -10 V; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-emitter voltage. Fig.5 Transition frequency as a function of collector current. 1995 Sep 12 4 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 MBB348 handbook, halfpage 40 d im (dB) handbook, halfpage 50 MBB349 45 d im (dB) 55 50 55 60 60 65 40 60 80 I C (mA) 100 65 40 60 80 100 120 I C (mA) VCE = -10 V; Vo = 650 mV; Tamb = 25 C; f(p+q-r) = 443.25 MHz. VCE = -10 V; Vo = 550 mV; Tamb = 25 C; f(p+q-r) = 848.25 MHz. Fig.6 Intermodulation distortion as a function of collector current. Fig.7 Intermodulation distortion as a function of collector current. MBB350 MBB351 handbook, halfpage 10 d2 (dB) handbook, halfpage 10 d2 (dB) 20 20 30 30 40 40 50 50 60 10 30 50 70 90 110 I C (mA) 60 10 30 50 70 90 110 I C (mA) VCE = -10 V; Vo = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz. VCE = -10 V; Vo = 50 dBmV; Tamb = 25 C; f(p+q) = 810 MHz. Fig.8 Second order intermodulation distortion as a function of collector current. Fig.9 Second order intermodulation distortion as a function of collector current. 1995 Sep 12 5 Philips Semiconductors Product specification PNP 5 GHz wideband transistor PACKAGE OUTLINE BFG31 handbook, full pagewidth 0.95 0.85 S 0.32 0.24 seating plane 6.7 6.3 3.1 2.9 0.1 S B 4 0.2 M A A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 max o 2 2.3 4.6 0.80 0.60 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.10 SOT223. 1995 Sep 12 6 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFG31 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 7 |
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