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 DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ67W NPN 8 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability * SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 118 C; note 1 IC = 15 mA; VCE = 5 V; Tj = 25 C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C Ic = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C Ic = 5 mA; VCE = 8 V; f = 1 GHz open base CONDITIONS open emitter MIN. - - - - 60 - - - TYP. - - - - 100 8 13 1.3 1 2 3 PINNING PIN DESCRIPTION Code: V2 base emitter collector
handbook, 2 columns
BFQ67W
3
1 Top view
2
MBC870
Fig.1 SOT323.
MAX. 20 10 50 300 - - - -
UNIT V V mA mW GHz dB dB
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 118 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 10 2.5 50 300 150 175 V V V mA mW C C UNIT
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C, unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 5 V IC = 15 mA; VCE = 5 V IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C IC = 15 mA; VCE = 8 V; f = 1 GHz Tamb = 25 C IC = 15 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C F noise figure s = opt; IC = 5 mA; VCE = 8 V; f = 1 GHz s = opt; IC = 15 mA; VCE = 8 V; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; f = 2 GHz IC = 5 mA; VCE = 8 V; f = 2 GHz; Zs = 60 s = opt; IC = 15 mA; VCE = 8 V; f = 2 GHz IC = 5 mA; VCE = 8 V; f = 2 GHz; Zs = 60 Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22
2
BFQ67W
PARAMETER thermal resistance from junction to soldering point
CONDITIONS up to Ts = 118 C; note 1
THERMAL RESISTANCE 190 K/W
MIN. - 60 - - - - - - - - - - - -
TYP. - 100 0.7 1.3 0.5 8 13 8 1.3 2 2.2 2.5 2.7 3
MAX. 50 - - - - - - - - - - - - -
UNIT nA pF pF pF GHz dB dB dB dB dB dB dB dB
September 1995
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
MRC045- 1
400 handbook, halfpage P tot (mW) 300
MBB301
handbook, halfpage
120
h FE
80 200
40 100
0 0 50 100 150 T ( o C) s 200
0 0 20 40 I C (mA) 60
VCE = 5 V; Tj = 25 C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector current.
handbook, halfpage
0.8
MRC039
handbook, halfpage
10
MBB303
Cre (pF) 0.6
fT
(GHz) 8
6 0.4 4
0.2
2
0
0 0 4 8 VCB (V) 12 0 10 20 30 I C (mA) VCE = 8 V; f = 2 GHz; Tamb = 25 C. 40
IC = 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
BFQ67W
MRC042
handbook,20 halfpage
MRC040
gain (dB) 15
handbook, halfpage
50
MSG G max G UM
gain (dB) 40
G UM
30 10 MSG 20 5 10 0 G max
0
5
10
15
20
25
30 35 I C (mA)
0 10-2
10-1
1
f (GHz)
10
VCE = 8 V; f = 1 GHz; Tamb = 25 C.
IC = 5 mA; VCE = 8 V; Tamb = 25 C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of frequency.
handbook, halfpage
50 gain (dB) 40
MRC041
handbook, halfpage
50
MRC043
G UM
gain (dB) 40 G UM
30 MSG 20 G max 10
30
MSG
20
10
G max
0 10-2
10-1
1
f (GHz)
10
0 10-2
10-1
1
f (GHz)
10
IC = 15 mA; VCE = 8 V; Tamb = 25 C.
IC = 30 mA; VCE = 8 V; Tamb = 25 C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
September 1995
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
4 handbook, halfpage F (dB) 3
MRC044
2
1
0 1 10 I C (mA)
102
VCE = 8 V; f = 1 GHz.
Fig.10 Minimum noise figure as a function of collector current.
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 Fmin = 1.5 dB 0.2 opt 180 0 0.2 0.5 1 F = 2 dB F = 2.5 dB 0.2 F = 3 dB 5 2 5 0 0 5 0.4 0.2
0.5 -135 1
2
-45
MRC046
1.0
-90 IC = 5 mA; VCE = 8 V; f = 1 GHz; Zo = 50 .
Fig.11 Noise circle.
September 1995
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 0 40 MHz 0.2 5 0
0.2 3 GHz 180 0 0.2 0.5
5
0.5 -135 1
2
-45
MRA047
1.0
-90 IC = 15 mA; VCE = 8 V; Zo = 50 .
Fig.12 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz 180 3 GHz 50 40 30 20 10 0
-135
-45
-90 IC = 15 mA; VCE = 8 V.
MRC048
Fig.13 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
handbook, full pagewidth
90
135 3 GHz
45
40 MHz 180 0 0.5 0.4 0.3 0.2 0.1
-135
-45
-90 IC = 15 mA; VCE = 8 V.
MRC049
Fig.14 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 40 MHz 3 GHz 0.2 5 0
0.2
5
0.5 -135 1
2
-45
MRC050
1.0
-90 IC = 15 mA; VCE = 8 V; Zo = 50 .
Fig.15 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFQ67W
SOT323
D
B
E
A
X
y
HE
vMA
3
Q
A
A1 c
1
e1 e bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
September 1995
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFQ67W
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
10


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