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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D438
BLF2043 UHF power LDMOS transistor
Product specification Supersedes data of 2002 Sep 10 2003 Feb 10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: - Output power = 10 W (PEP) - Gain = 12 dB - Efficiency = 36.5% - dim = -32 dBc * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (HF to 2200 MHz) * No internal matching for broadband operation. APPLICATIONS * RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range * Broadcast drivers. DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 PL (W) 10 (PEP) Gp (dB) 12.5 D (%) 36.5 Fig.1 Simplified outline.
2 Top view 3 1
BLF2043
PINNING - SOT538A PIN 1 2 3 drain gate source, connected to mounting base DESCRIPTION
MBK905
dim (dBc) -32
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 10 2 CONDITIONS - - - -65 - MIN. MAX. 75 15 2.2 +150 200 V V A C C UNIT
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-h Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Cis Cos Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.2 mA VDS = 10 V; ID = 20 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 0.75 A VGS = 10 V; ID = 0.75 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4 - 2.8 - - - - - - TYP. - - - - - 0.5 1.2 11 9 0.5 PARAMETER thermal resistance from junction to heatsink CONDITIONS Tmb = 25 C; note 1
BLF2043
VALUE 9
UNIT K/W
MAX. - 5 1.5 - 40 - - - - -
UNIT V V A A nA S pF pF pF
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.4 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 IDQ (mA) 85 PL (W) 10 (PEP) Gp (dB) >11.8 D (%) >33 dim (dBc) -26
Ruggedness in class-AB operation The BLF2043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2000 MHz at rated load power.
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043
handbook, halfpage
15
MCE017
60
handbook, halfpage
0
MCE018
Gp (dB)
Gp
D (%)
40
dim (dBc) -20 d3 d5 -40 d7
10
D
5
20 -60
0 0 5 10
0 20 15 PL (PEP) (W)
-80
0
5
10
20 15 PL (PEP) (W)
Fig.2
Power gain and efficiency as functions of peak envelope load power; typical values.
Fig.3
Intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
0 dim (dBc) -10
MCE019
-20
-30
(1) (3)
-40
(2)
-50
0
5
10
15 20 PL (PEP) (W)
(1) IDQ = 55 mA. (2) IDQ = 85 mA. (3) IDQ = 115 mA.
Fig.4
Third order intermodulation distortion as a function of peak envelope load power and IDQ setting; typical values.
2003 Feb 10
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043
MGS999
MGT001
handbook, halfpage
10
Zi () 8 xi
handbook, halfpage Z
6
L ()
4
RL
2
6
0 4 -2 2 ri 0 1.8 -4 -6 1.8 XL
2
f (GHz)
2.2
2
f (GHz)
2.2
VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th 25 C. Impedance measured at reference planes (see Fig.7).
VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th 25 C. Impedance measured at reference planes (see Fig.7).
Fig.5
Input impedance as a function of frequency (series components); typical values.
Fig.6
Load impedance as a function of frequency (series components); typical values.
handbook, halfpage handbook, halfpage
drain gate
Zi ZL reference planes
MCE020 MGT002
Fig.7
Measuring reference planes SOT538A.
Fig.8 Definition of transistor impedance.
2003 Feb 10
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043
handbook, full pagewidth
VDD L2 C16 C18 C19
Vgate C17 R1 output 50 L3 C2 C3 C4 C5 C8 C9 C10
MCE021
L1 C6 L7 L4 L5 L6 C7 L8 L9 C1
C12
C13
C14
C15
L10
C11
L11
output 50
Fig.9 Class-AB test circuit for 2 GHz.
2003 Feb 10
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (see Figs 8 and 9) COMPONENT C1, C2 C3 C4, C10, C11 C5, C7 C6 C8 C9 C12 C13 C14 C15 C16 C17, C18 C19 L1, L2 L3 L4 L5 L6 L7, L8 L9 L10, L11 R1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. DESCRIPTION VALUE DIMENSIONS
BLF2043
CATALOGUE NO.
multilayer ceramic chip capacitor; note 1 6.8 pF multilayer ceramic chip capacitor; note 1 1.0 pF tekelec variable capacitor; type 37271 0.6 to 4.5 pF multilayer ceramic chip capacitor; note 1 2.0 pF multilayer ceramic chip capacitor; note 1 2.7 pF multilayer ceramic chip capacitor; note 1 0.2 pF multilayer ceramic chip capacitor; note 1 0.6 to 4.5 pF multilayer ceramic chip capacitor; note 1 10 pF multilayer ceramic chip capacitor; note 1 51 pF multilayer ceramic chip capacitor; note 1 120 pF multilayer ceramic chip capacitor electrolytic capacitor tantalum SMD capacitor 3 turns enamelled 0.5 mm copper wire stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 metal film resistor 50 50 73.2 31 64.7 31 50 2.2 k; 0.6 W 100 nF 100 F; 63 V 10 F; 35 V 3 loops; d = 3 mm length = 3 mm 3.5 x 1.5 mm 1.0 x 1.5 mm 5 x 2 mm 11.0 x 0.8 mm 1.5 x 1.0 mm 14.4 x 3.0 mm 3.5 x 1.5 mm 2222 581 16641 2222 037 58101
multilayer ceramic chip capacitor; note 2 1 nF
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (r = 2.2); thickness 0.51 mm.
2003 Feb 10
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2043
handbook, full pagewidth
BLF2043 TEST CIRCUIT
C17
C18
C19 C16 L2
C15 C14 C13 C12
C1 C3 C2
R1 C5
C6 C7
L1 C11
BLF2043
C8 C9 C10
C4
BLF2043 TEST CIRCUIT
54
52
MCE022
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 2.2), thickness 0.51 mm.
Fig.10 Component layout for 2 GHz class-AB test circuit.
2003 Feb 10
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Ceramic surface mounted package; 2 leads
BLF2043
SOT538A
D
A
z2 (4x) D1 D2
3
z4 (4x) B c
1 A L
z1 (4x) H E2 E1 E
z3 (4x) 2 w1 M B M 0 2.5 scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.95 2.29 0.116 0.090 b 1.35 1.19 0.053 0.047 c 0.23 0.18 0.009 0.007 D 5.16 5.00 0.203 0.197 D1 4.65 4.50 0.183 0.177 D2 5.16 5.00 0.203 0.197 E 4.14 3.99 0.163 0.157 E1 3.63 3.48 0.143 0.137 E2 4.14 3.99 0.163 0.157 H 7.49 7.24 0.295 0.285 L 2.03 1.27 0.080 0.050 Q 0.10 0.00 w1 0.25 z1 0.58 0.43 z2 0.25 0.18 z3 0.97 0.81 0.038 0.032 z4 0.51 0.00 0.020 0.000 5 mm
b
Q
7 0 7 0
0.004 0.010 0.000
0.023 0.010 0.017 0.007
OUTLINE VERSION SOT538A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 00-03-03 02-08-20
2003 Feb 10
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF2043
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Feb 10
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF2043
2003 Feb 10
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/06/pp12
Date of release: 2003
Feb 10
Document order number:
9397 750 10917

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