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| SIMOPAC(R) Module BSM 254 F VDS = 500 V ID = 2 x 35 A R DS(on) = 0.17 q q q q q q q Power module Half-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 2a Type BSM 254 F Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1150-A2 Symbol Values 500 500 20 35 140 - 55 ... + 150 400 0.31 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis - - - - Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C Pulsed drain current, TC = 25 C Operating and storage temperature range Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) 2) A C W K/W Vac mm - See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 113 BSM 254 F Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 500 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 22 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max., ID = 22 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 250 V, VGS = 10 V ID = 22 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 250 V, VGS = 10 V ID = 22 A, RGS = 3.3 Values typ. max. Unit V(BR)DSS 500 - 3.0 - 4.0 V VGS(th) 2.1 I DSS - - 50 300 10 0.14 250 1000 A IGSS - 100 nA - 0.17 RDS(on) gfs Ciss Coss Crss td (on) tr td (off) tf 13 - - - - - - - 20 18 1.3 0.48 40 30 70 55 - 24 1.9 0.7 - - - - S nF ns Semiconductor Group 114 BSM 254 F Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Fast-recovery reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 70 A , VGS = 0 Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 100 V Tj = 25 C Tj = 150 C Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 100 V Tj = 25 C Tj = 150 C Repetitive peak reverse current IF = IS, diF/dt = 100 A/ s, VR = 100 V Tj = 25 C Tj = 150 C Values typ. max. Unit IS - - - 1.2 35 140 A ISM - VSD - 1.6 V ns - - 200 350 280 500 C - - 1.5 8.5 2.5 12 A - - 12 28 - - trr Qrr IRRM Semiconductor Group 115 BSM 254 F Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C Tj 150 C Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 s , VDS = 25 V Semiconductor Group 116 BSM 254 F Drain current ID = f (TC) parameter: VGS 10 V, Tj = 150 C Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C) Drain source on-state resistance RDS(on) = f (Tj) parameter: ID = 22 A; VGS = 10 V, (spread) Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz (spread) Semiconductor Group 117 BSM 254 F Forward characteristics of fast-recovery reverse diode IF = f (VSD) parameter: Tj,tp = 80 s (spread) Typ. reverse recovery charge Qrr = f (Tj) parameter: di/dt = 100 A/s, IF = 35 A VR = 100 V Semiconductor Group 118 BSM 254 F Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T Typ. gate charge VGS = f (QGate) parameter: IDpuls = 52.5 A Semiconductor Group 119 |
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