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DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D087
BSP130 N-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1997 Jun 23 2001 Dec 11
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown. APPLICATIONS * Line current interruptor in telephone sets * Relay, high-speed and line transformer drivers.
handbook, halfpage
BSP130
PINNING - SOT223 PIN 1 2 3 4 gate drain source drain DESCRIPTION
4
d
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 package.
1 Top view Marking code BSP130. 2 3
MAM054
g
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot VGSO RDSon VGSoff PARAMETER drain-source voltage (DC) drain current (DC) total power dissipation gate-source voltage drain-source on-state resistance gate-source cut-off voltage Tamb 25 C open drain ID = 250 mA; VGS = 10 V ID = 1 mA; VDS = VGS CONDITIONS - - - - - 0.8 MIN. MAX. 300 350 1.5 20 6 2 V mA W V V UNIT
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj Note 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature Tamb 25 C; note 1 open drain CONDITIONS - - - - - -55 - MIN. MAX. 300 20 350 1.4 1.5 +150 150 V V mA A W C C UNIT
2001 Dec 11
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient; note 1 VALUE 83.3
BSP130
UNIT K/W
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2. STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IGSS VGSth RDSon IDSS Yfs Ciss Coss Crss ton toff PARAMETER drain-source breakdown voltage gate-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source leakage current transfer admittance input capacitance output capacitance feedback capacitance CONDITIONS ID = 10 A; VGS = 0 VGS = 20 V; VDS = 0 ID = 1 mA; VDS = VGS ID = 20 mA; VGS = 2.4 V ID = 250 mA; VGS = 10 V VDS = 240 V; VGS = 0 ID = 250 mA; VDS = 25 V VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz VDS = 25 V; VGS = 0; f = 1 MHz ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V ID = 250 mA; VDD = 50 V; VGS = 10 to 0 V MIN. 300 - 0.8 - - - 200 - - - - - TYP. MAX. UNIT - - - 4.8 3.7 - 690 100 21 10 - 100 2 10 6 100 - 120 30 15 V nA V nA mS pF pF pF
Switching times (see Figs 2 and 3) turn-on time turn-off time 6 46 10 60 ns ns
2001 Dec 11
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSP130
handbook, halfpage handbook, halfpage
VDD = 50 V
90 %
INPUT 10 %
90 % 10 V 0V ID 50
MBB691
OUTPUT 10 % ton toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
2
MRC218
handbook, halfpage
250
MLD765
Ptot (W) 1.5
C (pF) 200
150 1 100 0.5 50 Coss Crss 0 10 20 VDS (V) 30 Ciss
0 0 50 100 150 Tj (C) 200
0
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.5 Fig.4 Power derating curve.
Capacitance as a function of drain-source voltage; typical values.
2001 Dec 11
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSP130
handbook, halfpage
1.2
MLD766
VGS = 10 V
5V 4V 3.5 V 3V
handbook, halfpage
1.2
MLD767
ID (A) 0.8
ID (A) 0.8
0.4
2.5 V
0.4
2V 0 0 4 8 VDS (V) 12 0 0 2 4 6 8 10 VGS (V)
Tj = 25 C.
VDS = 10 V; Tj = 25 C.
Fig.6 Typical output characteristics.
Fig.7 Typical transfer characteristics.
handbook, halfpage
30
MLD768
VGS = 2 V 2.5 V 3V 3.5 V
handbook, halfpage
20
MLD769
RDSon () 20
RDSon () 15
10
10 5 4V 5V 10 V 0 10-1 1 ID (A) 10 0 0 2 4 6 8 10 VGS (V)
Tj = 25 C.
VDS = 100 mV; Tj = 25 C.
Fig.8
Drain-source on-state resistance as a function of drain current; typical values.
Fig.9
Drain-source on-state resistance as a function of gate-source voltage; typical values.
2001 Dec 11
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSP130
102 handbook, full pagewidth = 0.75 Rth j-a (K/W) 0.5
MRC221
0.2 10 0.1 0.05 0.02 1 0.01 P
=
tp T
0 tp T 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 t
tp (s)
Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time.
MLD773
handbook, halfpage
10
ID (A) 1 (1) tp = 10 s 100 s 1 ms 10 ms
10-1 P 10-2 tp 10-3 1
DC
= T
tp
100 ms 1s
t T 10 102 VDS (V) 103
= 0.01; Tamb = 25 C. (1) RDSon limitation.
Fig.11 SOAR curve.
2001 Dec 11
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
BSP130
handbook, halfpage
2
MLD771
handbook, halfpage
1.25 k
MLD772
k 1.5
(1)
1
(2)
0.75 1 0.5
0.5 0.25
0 -50
0
50
100
Tj (C)
150
0 -50
0
50
100 Tj (C)
150
R DS(on) at T j k = ----------------------------------------R DS(on) at 25 C Typical RDSon; (1) ID = 250 mA; VGS = 10 V. (2) ID = 20 mA; VGS = 2.4 V.
V GS ( th ) at T j k = -------------------------------------------. V GS ( th ) at 25 C Typical VGSth at 1 mA.
Fig.12 Temperature coefficient of drain-source on-state resistance; typical values.
Fig.13 Temperature coefficient of gate-source threshold voltage; typical values.
2001 Dec 11
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BSP130
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001 Dec 11
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BSP130
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Dec 11
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
NOTES
BSP130
2001 Dec 11
10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
NOTES
BSP130
2001 Dec 11
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp12
Date of release: 2001
Dec 11
Document order number:
9397 750 09064

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