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| BUD725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate D D D D D Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies 2 94 8965 1 1 94 8964 3 2 3 BUD725D 1 Base 2 Collector 3 Emitter BUD725D -SMD 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 11 5 7.5 2.5 3.5 25 150 -65 to +150 Unit V V V V A A A A W C C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase 60C Document Number 86506 Rev. 1, 14-Jul-98 www.vishay.de * FaxBack +1-408-970-5600 1 (8) BUD725D Vishay Telefunken Maximum Thermal Resistance Tcase = 25C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 3.6 Unit K/W Electrical Characteristics Tcase = 25C, unless otherwise specified Parameter Transistor Collector cut-off current Test Conditions Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VBEsat hFE hFE hFE VCEW VCEsatdyn VCEsatdyn fT 400 11 0.2 1 10 10 4 500 Min Typ Max 50 0.5 Unit VCES = 700 V VCES = 700 V; Tcase = 150C Collector-emitter breakdown IC = 300 mA; L = 125 mH; voltage (figure 1) Imeasure = 100 mA Emitter-base breakdown voltage IE = 1 mA Collector-emitter saturation voltage IC = 850 mA; IB = 210 mA Base-emitter saturation voltage IC = 850 mA; IB = 210 mA DC forward current transfer ratio VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 850 mA VCE = 5 V; IC = 5 A Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 5 A; IB1 = 1.7 A; -IB2 = 0.5 A; -VBB = 5 V Dynamic saturation voltage IC = 2.5 A; IB = 0.5 A; t = 1 ms y g IC = 2.5 A; IB = 0.5 A; t = 3 ms Gain bandwidth product IC = 500 mA; VCE = 10 V; f = 1 MHz Free-wheel diode Forward voltage IF = 1.67 A mA mA V V V V V 12 3 4 V V MHz VF 1.2 V Switching Characteristics Tcase = 25C, unless otherwise specified Parameter Test Conditions Application specific switching time measured with Nylos3 Resistive load (figure 2) Turn on time IC = 0.85 A; IB1 = 0.2 A; -IB2 = 0.4 A; VS = 250 V Storage time Fall time Symbol tx ton ts tf Min 0.55 Typ Max 0.9 0.2 3 0.4 Unit ms ms ms ms www.vishay.de * FaxBack +1-408-970-5600 2 (8) Document Number 86506 Rev. 1, 14-Jul-98 BUD725D Vishay Telefunken 94 8863 V S2 + 10 V IB IC w Imeasure IC 5 IC V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses + LC VCE V(BR)CEO 100 mW + 0.1 + 10 ms I(BR)R Figure 1. Test circuit for V(BR)CE0 94 8852 IB IB1 0 t RC -IB2 IC (1) IB1 RB VBB + VCE IB VCC IC 0.9 IC 0.1 IC tr td ton t ts toff tf (1) Fast electronic switch Figure 2. Test circuit for switching characteristics - resistive load Document Number 86506 Rev. 1, 14-Jul-98 www.vishay.de * FaxBack +1-408-970-5600 3 (8) BUD725D Vishay Telefunken Typical Characteristics (Tcase = 25_C unless otherwise specified) 7 6 I C - Collector Current ( A ) 5 4 3 2 1 0 0 13743 100.00 Ptot - Total Power Dissipation ( W ) 3.12K/W 10.00 0.1 x IC < IB2 < 0.5 x IC VCEsat < 2 V 1.00 12.5K/W 0.10 25K/W 50K/W RthJA=85K/W 0.01 0 25 50 75 100 125 150 100 200 300 400 500 600 13744 VCE - Collector Emitter Voltage ( V ) Tcase - Case Temperature ( C ) Figure 3. VCEW - Diagram 5.0 4.5 IC - Collector Current ( A ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 13745 Figure 6. Ptot vs.Tcase V CEsat - Collector Emitter Saturation Voltage ( V ) 10.00 0.5A 0.4A 0.3A 0.2A IB=0.1A 1.00 5A 2.5A 1.5A 0.85A IC=0.5A 0.01 0.01 0.10 1 2 3 4 5 6 7 8 9 10 11 0.10 1.00 10.00 VCE - Collector Emitter Voltage ( V ) 13746 IB - Base Current ( A ) Figure 4. IC vs. VCE 100 100 Figure 7. VCEsat vs. IB h FE - Forward DC Current Transfer Ratio h FE - Forward DC Current Transfer Ratio Tj = 125C 10V 10 75C 10 25C 5V VCE=2V 1 0.01 0.10 1.00 10.00 VCE=2V 1 0.01 0.10 1.00 10.00 13747 IC - Collector Current ( A ) 13748 IC - Collector Current ( A ) Figure 5. hFE vs. IC Figure 8. hFE vs. IC www.vishay.de * FaxBack +1-408-970-5600 4 (8) Document Number 86506 Rev. 1, 14-Jul-98 BUD725D Vishay Telefunken 10 8 t s - Storage Time ( m s ) 6 4 Tcase = 125C 2 0.1 Tcase = 25C 0 0 13749 0.7 saturated switching R-load IC = 0.85A, IB1 = 0.1A 0.6 t f - Fall Time ( ms ) 0.5 0.4 0.3 0.2 Tcase = 25C 0 1 2 3 -IB2/IB1 4 5 6 13750 saturated switching R-load IC = 0.85A, IB1 = 0.1A Tcase = 125C 0 1 2 3 -IB2/IB1 4 5 6 Figure 9. ts vs. -IB2/IB1 10 8 t s - Storage Time ( m s ) 6 4 2 Tcase = 25C 0 0 14251 Figure 12. tf vs. -IB2/IB1 0.7 t f - Fall Time ( ms ) saturated switching R-load IC = 0.85A, IB1 = 0.2A 0.6 0.5 0.4 0.3 0.2 0.1 0 saturated switching R-load IC = 0.85A, IB1 = 0.2A Tcase = 125C Tcase = 125C Tcase = 25C 1 2 -IB2/IB1 3 4 14252 0 1 2 -IB2/IB1 3 4 Figure 10. ts vs. -IB2/IB1 100.00 FBSOA IC - Collector Current ( A ) 10.00 tp=10ms 50ms 100ms tp / Tv 0.0 1 0.10 500ms 1ms 5ms DC 1 13742 Figure 13. tf vs. -IB2/IB1 10.00 I F - Forward Current ( A ) 10000 14253 1.00 1.00 0.10 0.01 10 100 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 1000 VCE - Collector Emitter Voltage ( V ) Figure 11. IC vs. VCE Figure 14. IF vs. VF Document Number 86506 Rev. 1, 14-Jul-98 www.vishay.de * FaxBack +1-408-970-5600 5 (8) BUD725D Vishay Telefunken Dimensions in mm 14292 www.vishay.de * FaxBack +1-408-970-5600 6 (8) Document Number 86506 Rev. 1, 14-Jul-98 BUD725D Vishay Telefunken 14293 For ordering TO 252 add SMD to the type number (i.e. BUD725D -SMD) Document Number 86506 Rev. 1, 14-Jul-98 www.vishay.de * FaxBack +1-408-970-5600 7 (8) BUD725D Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 8 (8) Document Number 86506 Rev. 1, 14-Jul-98 |
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