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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY428 Damper diode Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification Damper diode FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Available in ammo-pack * Also available with preformed leads for easy insertion. APPLICATIONS * Damper diode in high frequency horizontal deflection circuits up to 64 kHz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. BY428 This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) Fig.1 Simplified outline (SOD64) and symbol. , a MAM104 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VR IFWM IFRM IFSM PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage working peak forward current repetitive peak forward current non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax Ttp = 80 C; lead length = 10 mm; see Fig.2 CONDITIONS MIN. - - - - - - MAX. 1500 1500 1400 4 8 50 V V V A A A UNIT Tstg Tj storage temperature junction temperature -65 -65 +175 +150 C C ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR trr tfr PARAMETER forward voltage reverse current reverse recovery time forward recovery time CONDITIONS IF = 4 A; Tj = Tj max; see Fig.3 IF = 4 A; see Fig.3 VR = VRmax; Tj = 150 C when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.6 when switched to IF = 5 A in 50 ns; Tj = Tj max; see Fig.7 MAX. 1.60 1.95 150 250 250 V V A ns ns UNIT 1996 Sep 26 2 Philips Semiconductors Product specification Damper diode THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 mounted as shown in Fig.5 Note CONDITIONS lead length = 10 mm BY428 VALUE 25 75 40 UNIT K/W K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.4. For more information please refer to the "General Part of associated Handbook". 1996 Sep 26 3 Philips Semiconductors Product specification Damper diode GRAPHICAL DATA MBH409 BY428 handbook, halfpage 4 handbook, halfpage 8 MBH410 Ptot (W) 3 IF (A) 6 2 4 1 2 0 0 1 2 3 4 5 IFWM (A) 6 0 0 1 2 VF (V) 3 Solid line: basic high-voltage E/W modulator circuit; see Fig.8. Dotted line: basic conventional horizontal deflection circuit; see Fig.9. Curves include power dissipation due to switching losses. Dotted line: Tj = 150 C. Solid line: Tj = 25 C. Fig.2 Maximum total power dissipation as a function of working peak forward current. Fig.3 Forward current as a function of forward voltage; maximum values. handbook, halfpage handbook, halfpage 35 10 50 25 7 50 3 cm2 copper 3 cm2 copper 30 10 2 3 MGA200 MGA204 25.4 Dimensions in mm. Dimensions in mm. Fig.5 Fig.4 Device mounted on a printed-circuit board. Mounting with additional printed-circuit board for heat sink purposes. 1996 Sep 26 4 Philips Semiconductors Product specification Damper diode BY428 handbook, full pagewidth DUT + IF (A) 0.5 1 t rr 10 25 V 50 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.6 Test circuit and reverse recovery time waveform and definition. handbook, halfpage MGD600 VF 90% 100% t fr IF t 10% t Fig.7 Forward recovery time definition. 1996 Sep 26 5 Philips Semiconductors Product specification Damper diode APPLICATION INFORMATION For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9. BY428 The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance Rth j-a and the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2. The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time of the diode is shorter, allowing a higher IFWM (see Fig.2). handbook, horizontal halfpage deflection transistor D1 LY horizontal handbook, halfpage deflection transistor D1 Cf LY Cs + (E-W) MBE935 MBE934 D1 = BY428. D1 = BY428. Fig.8 Application in basic high-voltage E/W modulator circuit. Fig.9 Application in basic horizontal deflection circuit. handbook, full pagewidth IF I FRM I FWM time VR VRRM time tp T MCD430 - 1 Fig.10 Basic application waveforms. 1996 Sep 26 6 Philips Semiconductors Product specification Damper diode PACKAGE OUTLINE BY428 handbook, full pagewidth k 4.5 max 28 min Dimensions in mm. The marking band indicates the cathode. , 5.0 max a 1.35 max 28 min MBC049 Fig.11 SOD64. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 26 7 |
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